CNY34X

CNY30X, CNY34X CNY30, CNY34 PHOTON COUPLED ISOLATOR Ga As LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form 2.54 7.0 6.0 7.62 max. 1 2 3 Dimensions in mm 6 5 4 8.3 max. DESCRIPTION The CNY30, CNY34 are optically coupled isolators consisting of infrared light emitting diode and a light activated silicon controlled rectifier in a standard 6pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Surge Anode Current (5.0 A) l High Blocking Voltage (200V*1, 400V*1) l Low Turn on Current (5mA typical) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l 10A, T2L compatible, Solid State Relay l 25W Logic Indicator Lamp Driver l 400V Symmetrical transistor coupler 0.5 min. 0.48 5.1 max. 3.9 3.1 0.25 15° Max ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Forward Current (Peak) (1µs pulse, 300pps) Reverse Voltage Power Dissipation DETECTOR Peak Forward Voltage CNY30 CNY34 Peak Reverse Gate Voltage RMS On-state Current Peak On-state Current (100µs, 1% duty cycle) Surge Current (10ms) Power Dissipation 200V*1 400V*1 6V 300mA 10A 5A 300mW 60mA 3A 6V 100mW OPTION SM SURFACE MOUNT OPTION G 8.3 max 1.2 0.6 10.2 9.5 1.4 0.9 0.26 10.16 *1 IMPORTANT : A resistor must be connected between gate and cathode (pins 4 & 6) to prevent false firing (RGK < 56kΩ) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB91039-AAS/A3 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 13/11/97 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Peak Off-state Voltage (VDM ) CNY30 CNY34 Peak Reverse Voltage (VRM ) CNY30 CNY34 MIN TYP MAX UNITS 1.2 3 1.5 V V TEST CONDITION IF = 10mA I R = 1 0 µA RGK=10kΩ, ID= 50µA, TA= 100°C RGK=10kΩ,ID=150µA, TA=100°C RGK=10kΩ, ID= 50µA, TA=100°C RGK=10kΩ,ID=150µA, TA=100°C ITM = 300mA RGK=10kΩ, IF= 0, VDM=200V, TA=100°C RGK=10kΩ, IF= 0, VDM=400V, TA=100°C RGK=10kΩ, IF= 0, VDM=200V, TA=100°C RGK=10kΩ, IF= 0, VDM=400V, TA=100°C VAK =50V, RGK=10kΩ VAK=100V, RGK=27kΩ See note 1 See note 1 VIO = 500V (note 1) V = 0, f =1MHz Output (note 2) 200 400 200 400 V V V V On-state Voltage (VTM ) Off-state Current (IDM ) CNY30 CNY34 Reverse Current (IR ) CNY30 CNY34 1.1 1.3 50 150 50 150 V µA µA µA µA Coupled Input Current to Trigger ( IFT ) (note 2) 20 11 mA mA V/µs VRMS VPK Ω pF Coupled dv/dt, Input to Output (dv/dt) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Input-output Capacitance Cf 500 5300 7500 1011 2 Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. 5/12/00 D B91039-AAS/A3 Input Current to Trigger vs. Anode to Cathode Voltage FT 100 Normalized input current to trigger I 40 20 10 4 2 1.0 0.4 0.2 0.1 1 1kΩ 10kΩ 27kΩ 56kΩ 5 10 50 100 200 RGK =300Ω Normalized to VAK = 50V RGK =10kΩ TA = 25 °C FT Input Current to Trigger vs. Ambient Temperature 12 10 4 2 1.0 0.4 0.2 56kΩ 0 Normalized to VAK = 50V, RGK =10kΩ, TA = 25 °C 20 40 60 80 100 120 10kΩ 27kΩ 1kΩ RGK =300Ω Normalized input current to trigger I 0.1 -60 -40 -20 Anode to cathode voltage VAK ( V ) Input Current to Trigger Distribution vs. Ambient Temperature FT Ambient temperature TA ( °C ) Input Current to Trigger vs. Pulse Width FT 10 4 2 1 10th percentile 0.4 0.2 0.1 90th percentile Normalized input current to trigger I Normalized input current to trigger I Normalized to VAK = 50V RGK =10kΩ TA = 25 °C 100 40 20 10 4 2 1 0.4 0.2 0.1 1 2 56kΩ RGK =300Ω 1kΩ 10kΩ Normalized to VAK = 50V RGK =10kΩ TA = 25 °C 27kΩ -40 -20 0 20 40 60 80 100 Ambient temperature TA ( °C ) Turn on Time vs. Input Current 24 22 20 18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 Input current IF (mA) 5/12/00 4 6 10 20 40 60 100 200 400 1000 Pulse width ( µs ) Input Characteristics IF vs. VF 10kΩ RGK=1kΩ Turn on time t on (µs) VAK = 50V ton = td + tr tr = 1µs Forward current I F (mA) 100 40 20 10 4 2 1 0.4 0.2 0.1 0 0.5 1 1.5 2 2.5 3 Forward voltage VF ( V ) D B91039-AAS/A3 25°C 100°C -55°C 56kΩ Holding Current vs. Ambient Temperature Transient thermal impedance ( °C / Watt ) 10000 4000 2000 1000 400 200 100 40 20 10 RGK =300Ω 1kΩ Normalized to VAK = 50V RGK =10kΩ TA = 25 °C 1000 Maximum Transient Thermal Impedence 1. Lead temperature measured at the widest portion of the SCR anode lead. 400 2. Ambient temperature measured at 200 a point 1/2" from the device. Holding current I H ( µA) 100 40 20 10 4 2 1 0.001 Junction to ambient n to lea d 27kΩ 56kΩ -60 -40 -20 0 20 40 60 80 100 120 0.01 0.1 1 2 4 10 Junctio 10kΩ 100 Ambient temperature TA ( °C ) Off State Forward Current vs. Ambient Temperature Normalized forward current off state ( I D ) Maximum allowable temperature ( °C ) 10000 4000 2000 1000 400 200 100 40 20 10 4 2 1 0 25 50 75 100 Ambient temperature TA ( °C ) dV/dt vs. Ambient temperature 1000 400 100 40 10 4 1 0.4 0.1 25 50 75 100 0 Ambient temperature TA ( °C ) 27kΩ 56kΩ 1kΩ 10kΩ RGK =300Ω 2 Junction temperature = 100°C Time (seconds) On State Current vs. Maximum Allowable Temperature 100 90 80 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 On state current ( Α ) 1.0 1. 2. 3. 4. 1. Ambient temp. half-sine wave avg 2. Ambient temp. DC current 3. Anode lead temp. half-sine wave avg 4. Anode lead temp. DC current Normalized to VAK = 50V TA = 25 °C VAK = 400V VAK = 200V VAK = 50V Critical rate of rise applied forward voltage dV/dt (V/ µs) On State Characteristics 1 0.4 On state current I T (A) 0.2 0.1 0.04 0.02 0.01 Junction temperature = 25°C Increases to forward breakover voltage 1 2 3 On state voltage VT ( V ) 4 DB91039-AAS/A3 5/12/00