ELM14600AA
General Description
Complementary Enhancement Mode Power MOS FET
The ELM14600AA uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Features
n-channel VDS (V) = 30V ID = 6.9A RDS(ON) < 27m (VGS = 10V) < 32m < 50m (VGS = 4.5V) (VGS = 2.5V) p-channel -30V -5A < 49m < 64m < 120m (VGS =-10V) (VGS =-4.5V) (VGS =-2.5V)
SOP-8 Top View
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