EM128L08T

EM128L08T

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    EM128L08T - 128Kx8 Bit Ultra-Low Power Asynchronous Static RAM - List of Unclassifed Manufacturers

  • 详情介绍
  • 数据手册
  • 价格&库存
EM128L08T 数据手册
NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128L08 Advance Information EM128L08 Family 128Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview The EM128L08 is an integrated memory device containing a low power 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is fabricated using NanoAmp’s advanced CMOS process and high-speed/lowpower circuit technology. This device is designed for very low voltage operation making it quite suitable for battery powered devices. It is also designed for both very low operating and standbycurrents. The device pinout is compatible with other standard 128Kx8 SRAMs. Features • • • • • • Wide Voltage Range: 2.3 to 3.6 Volts Extended Temperature Range: -40 to +85 o C Fast Cycle Time: TACC < 55 ns @ 3.0V Very Low Operating Current: ICC < 10 mA typical at 3V, 10 Mhz Very Low Standby Current: ISB < 10 µA @ 55 o C 32-Pin TSOP, STSOP, Packages Available FIGURE 1: Typical Operating Current Curves 12.5 10.0 3.6 Volts Typic al IC C 7.5 2.3 Volts 5.0 2.5 0.0 0 2.5 5.0 7.5 10.0 12.5 15.0 Operating Frequency (Mhz) Stock No. 23033-A Advance Information - Subject to Change Without Notice 1 NanoAmp Solutions, Inc. EM128L08 Advance Information FIGURE 1: Pin Configuration A11 A9 A8 A13 WE C E2 A 15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 EM128L08 STSOP, TSOP 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE D7 D6 D5 D4 D3 VSS D2 D1 D0 A0 A1 A2 A3 FIGURE 2: Functional Block Diagram Input/ Data I/O Output Mux and D0 - D 7 Buffers Address Inputs A0 - A16 Address Decode Logic 128K x 8 RAM Array CE WE OE Pin Name A0-A16 D0-D7 CE OE Control Logic TABLE 1: Pin Description Pin Function Address Inputs Data Inputs/Outputs Chip Enable (Active Low) Output Enable (Active Low) Pin Name WE VCC VSS NC Pin Function Write Enable (Active Low) Power Ground Not Connected (Do not connect signal) TABLE 2: Functional Description CE1 H X L L L CE2 X L H H H WE X X L H H OE X X X L H D0-D7 High Z High Z Data In Data Out High Z MODE Standby Standby Write Read Active POWER Standby Standby Active -> Standby* Active -> Standby* Standby* *The device will consume active power in this mode whenever addresses are changed Stock No. 23033-A Advance Information - Subject to Change Without Notice 2 NanoAmp Solutions, Inc. EM128L08 Advance Information TABLE 3: Absolute Maximum Ratings* Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time * Symbol VIN,OUT VCC PD T STG TA T SOLDER o Rating –0.3 to VCC +0.3 –0.3 to 4.0 500 –40 to 125 -40 to +85 260 C, 10sec(Lead only) Unit V V mW o o o C C C Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. TABLE 4: Operating Characteristics (Over specified Temperature Range) Item Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 µS Cycle Time Read/Write Operating Supply Current @ 70 nS Cycle Time Read/Write Quiescent Operating Supply Current (Note 1) Symbol VCC VDR VIH VIL VOH VO L I LI ILO ICC1 ICC2 IOH = 0.2mA IOL = -0.2mA VIN = 0 to VCC OE = V IH or Chip Disabled VCC=3.6 V, V IN=VIH or VIL Chip Enabled, IOL = 0 VCC=3.6 V, V IN=VIH or VIL Chip Enabled, IOL = 0 VIN = V CC or 0V Chip Enabled, IOL = 0 f = 0, t A= 85oC, VCC = 3.3 V VIN = V CC or 0V Chip Disabled tA = 55o C, VCC = 3.3V VIN = V CC or 0V Chip Disabled tA = 85o C, VCC = 3.3V Vcc = 2.0V, VIN = VCC or 0 Chip Disabled, tA = 85o C Chip Disabled (Note 3) Test Conditions Min 2.3 1.8 0.7VCC –0.5 VCC –0.2 0.2 0.5 0.5 3.0 14.0 Typ Max 3.6 3.6 VCC +0.5 0.3VCC Unit V V V V V V µA µA mA mA ICC3 20 µA Operating Standby Current (Note 1) Maximum Standby Current (Note 1) Maximum Data Retention Current (Note 1) I SB1 10 µA I SB2 20 µA I DR 10 µA Note 1. This device assumes a standby mode if either CE1 is disabled (high) or CE2 is disabled (low). It will also automatically go into a standby mode whenever all input signals are quiescent (not toggling) regardless of the state of CE1 o r CE2. In order to achieve low standby current in the enabled mode (CE1 l ow and CE2 high), all inputs must be within 0.2 volts of either V CC o r V SS . Stock No. 23033-A Advance Information - Subject to Change Without Notice 3 NanoAmp Solutions, Inc. EM128L08 Advance Information TABLE 5: Timing Test Conditions Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature 0.1V CC to 0.9 VCC 5ns 0.5 VCC CL = 30pF -40 to +85 o C TABLE 6: Timing 2.3 - 3.6 V Item Read Cycle Time Address Access Time Chip Enable to Valid Output Output Enable to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Write Pulse Width Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol Min. tRC tAA tCO tO E t LZ tOLZ tHZ tOHZ tOH tWC tCW t AW t WP tAS tWR tWHZ tDW tDH tOW 40 0 5 10 5 0 0 10 70 50 50 40 0 0 20 35 0 5 20 20 70 70 70 25 10 5 0 0 10 55 45 45 35 0 0 15 15 15 Max. Min. 55 55 55 20 Max. ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 3.0 - 3.6 V Units Stock No. 23033-A Advance Information - Subject to Change Without Notice 4 NanoAmp Solutions, Inc. EM128L08 Advance Information FIGURE 3: Read Cycle Timing (WE = VIH ) tRC A0-A16 tAA tCE CE1/CE2 tLZ OE tOLZ D0-D7 Data Valid tOH tOE Enable Valid tOHZ tHZ FIGURE 4: Write Cycle Timing (OE clock) tWC A0-A16 tAW OE tCW CE1/CE2 Enable Valid tWP WE tAS tWHZ tDW Data In tOHZ Data Out High-Z Data tOW tDH tWR Stock No. 23033-A Advance Information - Subject to Change Without Notice 5 NanoAmp Solutions, Inc. EM128L08 Advance Information FIGURE 5: Write Cycle Timing (OE fixed) tWC A0-A16 tAW tCW CE1/CE2 tAS WE tDW Data In tWHZ Data Out High-Z Data Valid tOW Enable Valid tWP tDH tOH tWR Stock No. 23033-A Advance Information - Subject to Change Without Notice 6 NanoAmp Solutions, Inc. EM128L08 Advance Information TABLE 7: Ordering Information Part Number EM128L08T EM128L08N Package 32 pin TSOP 32 pin STSOP Temperature Range -40 to +85 oC -40 to +85 C o Voltage Range 2.3 to 3.6 V 2.3 to 3.6 V Speed 55 ns @ 3.0 V 55 ns @ 3.0 V TABLE 8: Revision History Revision # A Date Jan. 2001 Initial Advance Release Change Description Stock No. 23033-A Advance Information - Subject to Change Without Notice 7
EM128L08T
### 物料型号 - 型号:EM128L08 - 类型:128Kx8位超低功耗异步静态随机存取存储器(SRAM) - 封装:32引脚TSOP和STSOP - 工作电压范围:2.3至3.6伏特 - 速度:在3.0V下,55纳秒

### 器件简介 EM128L08是一款集成存储器设备,包含低功耗1Mbit静态随机存取存储器,组织为131,072字乘以8位。该设备使用NanoAmp的先进CMOS工艺和高速/低功耗电路技术制造。设计适用于极低电压操作,非常适合电池供电设备,同时设计用于非常低的运行和待机电流。

### 引脚分配 - A0-A16:地址输入 - D0-D7:数据输入/输出 - CE:芯片使能(低电平有效) - OE:输出使能(低电平有效) - WE:写使能(低电平有效) - Vcc:电源 - Vss:地线 - NC:不连接(请勿连接信号)

### 参数特性 - 宽电压范围:2.3至3.6伏特 - 扩展温度范围:-40至+85摄氏度 - 快速周期时间:3.0V时<55纳秒 - 超低运行电流:典型值<10毫安在3V,10MHz - 超低待机电流:在55摄氏度时<10微安

### 功能详解 - 待机模式:如果CE1禁用(高电平)或CE2禁用(低电平),设备将进入待机模式。当所有输入信号静止(不切换)时,无论CE1或CE2的状态如何,设备也会自动进入待机模式。为了在启用模式(CE1低电平和CE2高电平)下实现低待机电流,所有输入必须在VCC或VSS的0.2伏特范围内。

### 应用信息 EM128L08适用于需要极低功耗和低电压操作的应用,如电池供电设备。由于其低功耗特性,也适合于移动设备和便携式电子设备。

### 封装信息 - EM128L08T:32引脚TSOP封装,工作温度范围为-40至+85摄氏度,2.3至3.6V电压范围内,3.0V时速度为55纳秒。 - EM128L08N:32引脚STSOP封装,工作温度范围为-40至+85摄氏度,2.3至3.6V电压范围内,3.0V时速度为55纳秒。
EM128L08T 价格&库存

很抱歉,暂时无法提供与“EM128L08T”相匹配的价格&库存,您可以联系我们找货

免费人工找货