FD1500W

Retour page principale PART NUMBER Fermionics Opto-Technology Large Area InGaAs PIN Photodiodes diameter of active area=1.5 mm DESCRIPTION FD1500W Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device structure. ABSOLUTE MAXIMUM RATINGS (T=25°C) PARAMETER Storage Temperature Operating Temperature Forward Current Reverse Current Reverse Voltage RATING -40 to +100 -40 to +85 100 20 2 UNITS °C °C mA mA V OPTICAL AND ELECTRICAL CHARACTERISTICS (T=25°C) PARAMETER SYMBOL TEST CONDITIONS λ = 850 nm Responsivity R λ = 1300 nm λ = 1550 nm Shunt Resistance Capacitance RS C V =0V R V =0V R MIN 0.10 0.80 0.85 2 TYP 0.20 0.90 0.95 10 300 MAX 450 MΩ pF A /W UNITS Very High Shunt Resistance devices are available upon request. DIMENSIONAL OUTLINE 1 2 ANODE CATHODE CASE (dimensions in inches) 3 PART NUMBER Fermionics Opto-Technology Large Area InGaAs PIN Photodiodes TYPICAL CHARACTERISTICS Fig. 1 Spectral Response (R vs. λ) 10 FD1500W Responsivity, R (A/W) 1 0.1 0.01 0.001 800 1000 1200 1400 1600 1800 Wavelength, λ (nm) Fig. 2 Dark Current vs. Reverse Voltage 10 -7 Dark Current, ID (A) 10-8 10-9 0 1 2 3 4 5 Reverse Voltage, VR (V) Fig. 3 Capacitance vs. Reverse Voltage 1000 Capacitance, C (pF) 100 10 1 0 1 2 3 4 5 Reverse Voltage, VR (V)