FLM0910-12F

FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PTot Tstg Tch Rating 15 -5 57.6 -65 to +175 175 Unit V V W oC oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25°C) Item DC Input Voltage Gate Current Gate Current Symbol VDS IGS IGR RG=50Ω RG=50Ω Condition Limit Unit V mA mA ≤10 ≤32.0 ≥-5.6 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=3.6A VDS=5V, IDS=300mA IGS=-340uA VDS=10V f=9.5 - 10.5 GHz IDS=0.5Idss (typ.) Zs=ZL=50Ω Min. -0.5 -5.0 39.5 6.0 - Limit Typ. 6.0 5000 -1.5 40.5 7.0 3.5 25 2.3 - Max. 9.0 -3.0 4.5 1.2 2.6 80 Unit A mS V V dBm dB A % dB o Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise ηadd ∆G Rth ∆Tch Channel to Case 10V X Idsr X Rth - C/W o C CASE STYLE: IB G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level Note:RF-Test is measured with Vgs-Constant Circuit. ESD Edition 1.2 September 2004 Class Ⅲ 2000V　~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) 1 FLM0910-12F X-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER Vds=10V, Ids=0.5IDSS 60 Total Power Dissipation [W] 50 42 40 Output power [dBm] 38 36 34 32 30 P.A.E. Pout 70 Power Added Efficiency [%} 60 50 40 30 20 10 0 20 22 24 26 28 30 32 34 36 Input power [dBm] 40 30 20 10 0 0 50 100 150 200 28 Case Temperature [degree C] OUTPUT POWER vs. INPUT POWER Vds=10V, Ids=0.5IDSS 42 Pin=35dBm 40 Output power [dBm] 38 36 34 Pin=33dBm Pin=30dBm Pin=26dBm 32 30 Pin=22dBm 28 9 9.5 10 Input power[dBm] 10.5 11 P1dB 2 FLM0910-12F X-Band Internally Matched FET ■ S-PARAMETER +90° +100j 10.5 9. H z 5G +50j +25j 10 +10j +250j 10 10.5 0 10. 5 9. H z 5G 10 ∞ ±180° 4 2 9.5GHz Scale for |S21| Scale for |S 12| 9.5GHz 0° 10 -10j 10. 5 -250j 25 0.2 -25j 10Ω -100j S 11 S 22 -50j 0.4 -90° S 12 S 21 VDS=10V, IDS=0.5Idss Freq [GHz] 9.0 9.1 9.2 9.3 9.4 9.5 9.6 9.7 9.8 9.9 10 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11 S11 MAG ANG 0.66 133.64 0.62 121.51 0.59 109.11 0.56 96.79 0.54 84.51 0.52 71.65 0.50 59.03 0.48 46.37 0.45 32.92 0.43 19.89 0.40 4.99 0.38 -11.34 0.34 -30.15 0.30 -51.96 0.28 -77.26 0.28 -106.09 0.30 -133.91 0.35 -159.52 0.41 179.35 0.47 162.12 0.53 147.13 S21 MAG 2.54 2.53 2.52 2.51 2.51 2.52 2.54 2.56 2.59 2.61 2.63 2.65 2.65 2.65 2.61 2.57 2.49 2.40 2.28 2.14 2.00 ANG -104.76 -116.04 -127.33 -138.32 -149.10 -160.11 -171.12 177.84 166.32 154.59 142.31 130.18 117.31 104.11 90.66 77.15 63.18 49.45 35.59 21.90 8.89 S12 MAG 0.02 0.03 0.03 0.04 0.04 0.05 0.06 0.06 0.07 0.07 0.08 0.08 0.09 0.09 0.09 0.10 0.10 0.09 0.09 0.09 0.08 ANG -117.97 -137.79 -150.61 -165.52 -175.45 173.89 162.66 153.39 141.50 130.54 119.17 107.91 95.66 84.09 70.62 57.05 45.22 31.57 20.35 6.54 -4.01 S22 MAG ANG 0.25 36.41 0.28 30.66 0.30 24.58 0.33 18.45 0.36 13.07 0.37 8.38 0.38 2.25 0.38 -4.55 0.38 -11.38 0.37 -17.87 0.34 -24.57 0.31 -32.73 0.26 -42.86 0.21 -55.55 0.16 -68.18 0.10 -84.69 0.04 -134.34 0.08 134.77 0.14 113.53 0.20 100.70 0.25 85.90 3 FLM0910-12F X-Band Internally Matched FET ■ Package Out Line Case Style : IB Unit : mm PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4 FLM0910-12F X-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. TEL +81-45-853-8156 FAX +81-45-853-8170 5