FLM5964-35F

FLM5964-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm(Typ.) ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM5964-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25o C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Ts t g Tch Rating 15 -5 115 - 65 to +175 175 Unit V V W o C o C RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25o C) Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Sym bol V DS IGF IGR Condition RG=10Ω RG=10Ω Lim it ≤ 10 ≤ 108 ≥ -23.2 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P. Pow er Gain at 1dB G.C.P. Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion Sym bol IDSS gm Vp V GSO P1d B G1d B Id s r ηad d ∆G IM3 Condition VDS=5V, VGS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=480mA IGS=-480uA VDS=10V f=5.9 - 6.4 GHz IDS(DC)=8.0A(typ.) Zs=ZL=50 ohm f =6.4 GHz ∆ f=10MHz , 2-tone Test Pout=35.0dBm(S.C.L.) Channel to Case 10V x IDS(DC) X Rth -38 -40 dBc Min. -0.5 -5.0 45.0 8.0 Lim it Typ. 16 16 -1.5 45.5 9.0 8.5 36 Max. -3.0 9.5 1.2 Unit A S V V dBm dB A % dB Rth Therm al Resistance ∆ Tch Channel Tem perature Rise CASE STYLE : IK ESD Class III 2000V 　 ~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) o 1.1 1.3 C/W o 100 C G.C.P.:Gain Compression Point Edition 1.3 September 2004 1 FLM5964-35F C-Band Internally Matched FET Power Derating Curve 140 Total Power Dissipation (W) Output Power & P.A.E. vs. Input Power VDS=10V, IDS(DC), F=6.15GHz 49 47 Output Power (dBm) 45 43 41 39 37 35 33 24 26 28 30 32 34 36 38 40 42 P.A.E 80 Power Added Efficiency (%) 70 60 Pout 50 40 30 20 10 0 Input Power (dBm) 120 100 80 60 40 20 0 0 50 100 150 200 Case Temperature (℃ ) Output Power vs. Frequency VDS=10V, IDS(DC)=8A IMD vs. Output Power VDS =10V, IDS (DC)=8A f1=6.40GHz, f2=6.41GHz 48 46 Output Power (dBm) 44 42 40 38 36 34 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 6.6 Frequency (GHz) Pin=26dBm Pin=30dBm Pin=41dBm P1dB IMD (dBc) -25 -30 -35 -40 -45 -50 -55 -60 30 31 32 33 34 35 36 37 38 39 40 O utput Power (S.C.L.) (dBm) S.C.L. :Single Carria Level IM5 IM3 Pin=34dBm 2 FLM5964-35F C-Band Internally Matched FET ■ S-PARAMETER +90° +100j 6.4 5. 5 6.15 7. 4 6. 15 6.8 5. 9 +50j +25j 7. 4 +10j 5. 9 6.8 +250j 6.4 6.15 6.8 6.8 5.9 0 10Ω 25 ∞ ±180° 3 6. 4 6. 15 2 5. 5 5.9 10 5.5 7.4 7.4 Scale for |S21| 0° -10j -10j 6. 4 -250j 10 Scale for |S 12| 0.2 -90° 5.5 -25j -50j -100j S 11 S 22 S 12 S 21 VDS=10V, IDS(DC)=8.0A Freq. [G H z] 5. 50 5. 60 5. 70 5. 80 5. 90 6. 00 6. 10 6. 20 6. 30 6. 40 6. 50 6. 60 6. 70 6. 80 6. 90 7. 00 7. 10 7. 20 7. 30 7. 40 S 11 M AG 0. 67 0. 66 0. 65 0. 63 0. 61 0. 58 0. 55 0. 52 0. 47 0. 45 0. 44 0. 47 0. 52 0. 59 0. 67 0. 73 0. 79 0. 83 0. 86 0. 87 ANG 102. 87 85. 51 68. 42 50. 90 33. 18 14. 84 -4. 44 -25. 22 -49. 01 -76. 47 -106. 87 -137. 61 -166. 01 170. 37 150. 03 133. 37 119. 68 107. 43 97. 28 87. 88 M AG 2. 88 2. 95 3. 02 3. 06 3. 11 3. 14 3. 18 3. 20 3. 20 3. 19 3. 12 3. 00 2. 82 2. 62 2. 36 2. 13 1. 89 1. 66 1. 45 1. 26 S 21 ANG -62. 72 -79. 17 -96. 11 -113. 27 -130. 34 -147. 42 -165. 14 177. 48 159. 01 140. 15 120. 73 100. 85 81. 21 62. 01 43. 29 24. 82 8. 66 -7. 74 -22. 74 -36. 91 M AG 0. 04 0. 05 0. 05 0. 05 0. 06 0. 06 0. 06 0. 07 0. 07 0. 07 0. 07 0. 07 0. 07 0. 06 0. 06 0. 05 0. 05 0. 04 0. 04 0. 03 S 12 ANG -95. 54 -114. 71 -134. 53 -153. 13 -169. 44 172. 50 155. 67 138. 90 120. 83 103. 25 83. 21 62. 73 42. 98 23. 63 6. 16 -11. 73 -26. 89 -41. 76 -60. 07 -69. 68 M AG 0. 24 0. 20 0. 19 0. 20 0. 22 0. 24 0. 26 0. 26 0. 25 0. 22 0. 16 0. 09 0. 03 0. 11 0. 21 0. 30 0. 38 0. 46 0. 53 0. 59 S 22 ANG -177. 89 153. 50 122. 57 95. 12 72. 18 52. 33 37. 03 24. 21 12. 17 -0. 99 -13. 32 -19. 73 45. 23 95. 85 91. 96 81. 85 71. 10 60. 22 50. 29 41. 32 3 FLM5964-35F C-Band Internally Matched FET ■ Package Out Line Case Style : IK PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM5964-35F C-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. 5