FMM5061VF

FMM5061VF FEATURES ・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. Eudyna Devices’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Symbol VDD VGG Pin Tch Tstg Condition Rating 10 -7 26 +175 -55~125 Recommend 6 -5 ≤12 -40~+85 Limits Typ. Max. 13.3 *1 33 31*2 26 *2 24 21*1 *2 *1 X-Band Power Amplifier MMIC Unit V V dBm o C o C Unit V V dBm o C Unit GHz dBm dB % dBc mA mA mA dB dB RECOMMENDED OPERATING CONDITION Item Symbol Drain-Source Voltage VDD Gate-Source Voltage VGG Input Power Pin Operating Case Temperature TC Condition ELECTRICAL CHARACTERISTICS (Case Temperature TC =25 o C) Item Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency at 1dB G.C.P. Third Order Intermodulation* Drain Current at 1dB G.C.P. Gate Current Input Return Loss (at Pin=-20dBm) Output Return Loss (at Pin=-20dBm) Symbol f P1dB G1dB ηadd IM3 IDD IGG RLin RLout Test Conditions VDD=6V VGG=-5V Zs=Zl=50ohm *1:f=9.5~11.7GHz *2:f=11.7~13.3GHz Min. 9.5 *1 31 29*2 24 *2 22 *1 - 15 *3:∆f=10MHz , -42*3 -45*3 *1 *1 2-Tone Test, 1700 2400 *2 *2 1500 2400 Pout=19dBm S.C.L. 25 -8 -8 - CASE STYLE: VF ESD Class 0 G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level ~ 199 V Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.2 July 2004 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER vs. FREQUENCY VDD=6V, VGG=-5V P1dB OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER VDD=6V, VGG=-5V 36 2700 9 .5GHz 11.7GHz 13.3GHz 2500 Drain Current [mA] 2300 2100 1900 1700 1500 1300 1100 -10 -5 0 5 10 15 36 34 Output Power [dBm] 32 30 28 26 24 22 20 8 9 10 11 12 13 14 15 Pin=-4dBm Pin=0dBm Pin=+4dBm Pin=+10dBm 34 Output Power [dBm] 32 30 28 26 24 22 20 Frequency [GHz] Input Power [dBm] POWER ADDED EFFICIENCY vs FREQUENCY VDD=6V, VGG=-5V 35 Power-added Efficiency [%] 30 25 20 15 10 5 0 8 9 10 11 12 13 14 Frequency [GHz] Pin=10dBm P1dB Pin=+4dBm Pin=0dBm Pin=-4dBm 15 2 FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY V DD=6V, VGG=-5V, Pout=19dBm S.C.L. IMD vs OUTPUT POWER VDD=6V, VGG=-5V -40 Intermodulation Distortion [dBc] -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 8 9 10 11 12 13 14 15 -45 9.5GHz 11.7GHz 13.3GHz IM3 -50 -55 -60 -65 Frequency [GHz] IM3 IM5 IM5 15 20 25 30 2-Tone Total Output Pow er [dBm ] 3 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage VGG=-5V @9.5GHz 38 36 Output Power [dBm] OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage VGG=-5V @11.7GHz 2900 5V 6V 7V 2700 Output Power [dBm] Drain Current [mA] 38 36 34 32 30 28 26 24 22 20 -10 -5 0 5 10 15 Input Power [dBm] 5V 6V 7V 2900 2700 Drain Current [mA] G1dB [dB] 34 32 30 28 26 24 22 20 -10 -5 2500 2300 2100 1900 1700 1500 1300 1100 0 5 10 15 2500 2300 2100 1900 1700 1500 1300 1100 Input Power [dBm] OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage VGG=-5V @13.3GHz 38 36 Output Power [dBm] 34 32 30 28 26 24 22 20 -10 -5 0 5 10 15 Input Power [dBm] 5V 6V 7V 2900 2700 Drain Current [mA] 2500 2300 2100 1900 1700 1500 1300 1100 OUTPUT POWER, GAIN vs. DRAIN VOLTAGE VGG=-5V 38 36 34 P1dB [dBm] 32 30 28 26 24 22 20 4 5 6 VDD [V] 7 8 9 .5GHz 11.7GHz 13.3GHz 38 36 34 32 30 28 26 24 22 20 4 FMM5061VF X-Band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER　by Gate Voltage VDD=6V @9.5GHz 36 34 Output Power [dBm] OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER　by Gate Voltage VDD=6V @11.7GHz 2700 -4V -5V -6V 2500 Output Power [dBm] 36 34 -4V -5V -6V 2700 2500 Drain Current [mA] G1dB [dB] Drain Current [mA] 32 30 28 26 24 22 20 -10 -5 0 5 10 15 Input Power [dBm] 2300 2100 1900 1700 1500 1300 1100 32 30 28 26 24 22 20 -10 -5 0 5 10 15 Input Power [dBm] 2300 2100 1900 1700 1500 1300 1100 OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER　by Gate Voltage VDD=6V @13.3GHz 36 34 Output Power [dBm] 32 30 28 26 24 22 20 -10 -5 0 5 10 15 Input Power [dBm] -4V -5V -6V 2700 2500 Drain Current [mA] 2300 2100 1900 1700 1500 1300 1100 OUTPUT POWER, GAIN vs. GATE VOLTAGE VDD=6V 40 38 36 P1dB [dBm] 34 32 30 28 26 24 22 -7 -6 -5 VGG [V] -4 -3 9 .5GHz 11.7GHz 13.3GHz 40 38 36 34 32 30 28 26 24 22 5 FMM5061VF X-band Power Amplifier MMIC IMD PERFORMANCE vs OUTPUT POWER by Drain Voltage VGG=-5V @9.5GHz -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 30 2-Tone Total Output Pow er [dBm ] Intermodulation Distortion [dBc] -20 IMD PERFORMANCE vs OUTPUT POWER by Drain Voltage VGG=-5V @11.7GHz 5V 6V 7V -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 5V 6V 7V IM3 IM3 IM5 IM5 20 25 30 2-Tone Total Output Pow er [dBm ] IMD PERFORMANCE vs OUTPUT POWER by Drain Voltage V GG=-5V @13.3GHz -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 30 2-Tone Total Output Pow er [dBm ] 5V 6V 7V IM3 IM5 6 FMM5061VF X-Band Power Amplifier MMIC IMD PERFORMANCE vs OUTPUT POWER by Gate Voltage VDD=6V @9.5GHz -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 30 2-Tone Total Output Pow er [dBm ] IMD PERFORMANCE vs OUTPUT POWER by Gate Voltage V DD=6V @11.7GHz -20 Intermodulation Distortion [dBc] -4V -5V -6V -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 IM3 -4V -5V -6V IM3 IM5 IM5 20 25 30 2-Tone Total Output Pow er [dBm ] IMD PERFORMANCE vs OUTPUT POWER by Gate Voltage VDD=6V @13.3GHz -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 30 2-Tone Total Output Pow er [dBm ] -4V -5V -6V IM3 IM5 7 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Temperature VDD=6V, VGG=-5V @9.5GHz 36 34 Output Power [dBm] 32 30 28 26 24 22 20 -10 -5 0 5 10 15 Input Power [dBm] +25C +85C -40 C 2500 2300 Output Power [dBm] OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Temperature VDD=6V, VGG=-5V @11.7GHz 36 34 Drain Current [mA] 32 30 28 26 24 22 20 -10 -5 0 5 10 Input Power [dBm] 15 +25C +85C -40C 2500 2300 Drain Current [mA] Gain [dB] @Pin=-6dBm 2100 1900 1700 1500 1300 1100 900 2100 1900 1700 1500 1300 1100 900 OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Temperature VDD=6V, VGG=-5V @13.3GHz 36 34 Output Power [dBm] 32 30 28 26 24 22 20 -10 -5 0 5 10 Input Power [dBm] 15 +25C +85C -40C 2500 OUTPUT POWER, GAIN vs. TEMPERATURE VDD=6V, VGG=-5V 36 Psat [dBm] @Pin=12dBm 36 34 32 9 .5GHz 11.7GHz 13.3GHz 30 28 26 24 -50 -25 0 25 50 75 100 Temperature [oC] 2300 Drain Current [mA] 2100 1900 1700 1500 1300 1100 900 34 32 30 28 26 24 8 FMM5061VF X-Band Power Amplifier MMIC ■ S-PARAMETER Input/Output Return Loss vs. Frequency VDD=6V, VGG=-5.0V 0 Input/Output Return Loss [ dB ] -5 -10 -15 -20 -25 -30 -35 -40 9 9.5 10 10.5 11 11.5 12 12.5 13 13.5 14 Frequency [ GHz ] - Input　Return Loss - Output Return Loss Small Signal Gain vs. Frequency VDD=6V, VGG=-5.0V 36 32 Small Signal Gain [ dB ] 28 24 20 16 12 8 4 0 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 Frequency [ GHz ] 9 FMM5061VF X-band Power Amplifier MMIC ■ S-PARAMETER VDD=6.0V, VGG=-5.0V Frequency [ GHz ] 9.30 9.40 9.50 9.60 9.70 9.80 9.90 10.00 10.10 10.20 10.30 10.40 10.50 10.60 10.70 10.80 10.90 11.00 11.10 11.20 11.30 11.40 11.50 11.60 11.70 11.80 11.90 12.00 12.10 12.20 12.30 12.40 12.50 12.60 12.70 12.80 12.90 13.00 13.10 13.20 13.30 13.40 13.50 S11 MAG 0.261 0.231 0.204 0.177 0.154 0.133 0.116 0.100 0.089 0.083 0.082 0.084 0.083 0.077 0.070 0.066 0.063 0.057 0.048 0.040 0.036 0.040 0.057 0.080 0.100 0.128 0.151 0.180 0.217 0.253 0.294 0.314 0.328 0.330 0.334 0.329 0.321 0.317 0.302 0.294 0.272 0.256 0.234 ANG -99.9 -104.9 -107.9 -111.0 -114.3 -116.1 -114.8 -112.4 -108.2 -103.6 -98.8 -96.7 -97.2 -97.2 -97.8 -96.7 -95.5 -93.2 -86.6 -74.5 -52.8 -30.0 -19.9 -10.9 -11.2 -12.8 -14.1 -18.9 -22.2 -27.9 -36.0 -45.8 -54.8 -62.1 -69.4 -75.1 -82.9 -88.7 -95.8 -102.4 -109.3 -118.4 -125.4 MAG 23.106 22.787 22.461 22.034 21.842 21.705 21.602 21.781 21.916 22.244 22.665 22.982 23.362 23.583 23.710 23.685 23.626 23.536 23.513 23.249 23.074 22.920 22.825 22.875 22.517 22.305 22.229 21.987 21.654 21.530 21.516 21.151 20.750 19.987 19.742 19.461 19.175 18.916 18.807 18.700 18.763 18.833 18.766 S21 ANG -71.0 -85.3 -99.3 -113.0 -126.2 -139.2 -151.7 -164.4 -177.4 169.8 156.8 143.4 129.3 115.3 101.3 87.6 73.4 59.2 46.0 32.3 18.8 4.9 -8.5 -22.0 -35.9 -49.7 -63.5 -76.9 -90.7 -104.2 -118.9 -133.1 -146.8 -160.7 -174.6 172.1 158.9 145.3 131.9 117.4 104.0 89.6 74.6 MAG 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.002 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.004 0.004 0.004 0.004 0.004 0.003 0.002 0.002 0.002 0.002 0.002 0.002 0.001 0.001 0.001 0.001 0.001 0.001 S12 ANG -155.4 -162.6 -166.3 -169.3 -168.3 -170.0 -175.1 -179.7 -179.4 178.1 174.8 169.9 168.6 171.2 172.9 176.6 174.2 173.1 172.1 176.4 173.4 171.7 168.7 167.8 165.0 161.1 153.6 146.3 135.0 123.8 110.5 105.4 107.4 111.3 113.0 117.2 112.3 111.7 114.6 110.7 104.2 110.1 108.7 MAG 0.252 0.250 0.243 0.236 0.228 0.225 0.225 0.228 0.232 0.241 0.250 0.261 0.272 0.275 0.271 0.261 0.244 0.223 0.196 0.163 0.128 0.087 0.048 0.027 0.059 0.105 0.153 0.201 0.248 0.287 0.315 0.329 0.342 0.354 0.364 0.374 0.380 0.386 0.389 0.390 0.390 0.389 0.387 S22 ANG -41.8 -46.1 -50.7 -53.9 -56.2 -57.6 -58.1 -58.8 -59.6 -60.6 -62.4 -64.6 -68.4 -73.6 -79.1 -84.3 -89.7 -95.1 -99.9 -104.3 -108.0 -108.7 -99.7 -35.6 9.9 15.3 13.6 9.4 3.4 -3.3 -10.3 -15.4 -19.2 -22.1 -25.0 -27.6 -30.0 -32.4 -34.4 -36.1 -38.1 -39.4 -40.6 10 FMM5061VF X-Band Power Amplifier MMIC ∆Tch vs. DRAIN VOLTAGE (Reference Data) VGG=-5V 80 70 60 o ∆ Tch [ C] 50 40 30 20 10 0 4 5 6 VDD [V] 7 8 Note : ∆Tch : Case to Channel Temperature Rise MTTF vs. Tch 1.E+12 1.E+11 1.E+10 1.E+09 Ea=1.56eV MTTF [hrs] 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E+01 50 100 150 Tch [ C] o 200 250 11 FMM5061VF X-band Power Amplifier MMIC ■ Package Out Line PIN ASSIGMENT 1 : VGG 2 : RF in 3 : N.C. 4 : VDD 5 : RF out 6 : VDD 12 FMM5061VF X-Band Power Amplifier MMIC ■ Mounting Instructions for VF Package 1. Screw Mounting (1) The flange of package may be attached using screws. Torque conditions are shown in table 1. Table 1. Recommended and Maximum Torque for Screw Mounting Package VF Recommended screw M2.0 Recommended Torque 10 N-cm (0.9 lb-in) Maximum Torque 15 N-cm (1.3 lb-in) (2) First, tighten the screws with a torque driver set to 5 N-cm. (3) The surface finish of the heat sink should be better than 0.8 µm, and the surface flatness must be better than 10 µm. (4) Silicon based heat sink compounds should not be used for thermal conductive grease. They cause poor grounding of the source flange, contamination and long term degradation of thermal resistance between the FET package and heat sink. 2. Solder Mounting (1) Recommended solder are Tin-Lead solder (63Sn/37Pb), Lead-Free solder (Sn-3.0Ag-0.5Cu)*1 or equivalent. (2) For soldering, Tin-Lead solder (63Sn/37Pb) or Lead-Free solder (Sn-3.0Ag-0.5Cu)*1 shall be used. (*1: The figure displays with weight %. A predominantly tin-rich alloy with 3.0% silver and 0.5% copper.) (3) Recommended Flux is Rosin type with chlorine content: 0.2% or less and a low halogen content. After soldering, the flux residue should be removed by appropriate cleaning methods. (4) The recommended soldering conditions are as follows: Partial heating method (soldering iron, spot laser/air) Product terminal temperature: 260 deg-C, max. 10 s./terminal or 400 deg-C, max. 3 s./terminal 13 FMM5061VF X-band Power Amplifier MMIC ■ Recommended board layout PIN ASSIGMENT 1 : VGG 2 : RF in 3 : N.C. 4 : VDD 5 : RF out 6 : VDD Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module. Note 2: Two pins named VDD are internally connected. 14 FMM5061VF X-Band Power Amplifier MMIC CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 15