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FMM5805GJ-1

FMM5805GJ-1

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    FMM5805GJ-1 - 17.7-19.7GHz Power Amplifier MMIC - List of Unclassifed Manufacturers

  • 详情介绍
  • 数据手册
  • 价格&库存
FMM5805GJ-1 数据手册
FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm(Typ.) • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5805GJ-1 is a high-gain, high power, 3-stage MMIC amplifier designed for operation in the 17.7-19.7GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems.This device is well suited for point-to-point communication applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter DC Input Voltage DC Input Voltage Input Power Storage Temperature Operating Case Temperature Symbol VDD VGG Pin Tstg Top Condition Rating 10 -7 22 -55 to +125 -40 to +85 Unit V V dBm °C °C Eudyna recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Frequency Range Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Gain Flatness Drain Current at 1 dB G.C.P. Gate Current at 1 dB G.C.P. Power-Added Efficiency at 1dB G.C.P. Input Return Loss Output Return Loss Symbol f P1dB G1dB ∆G Iddrf Iggrf ηadd RLin RLout VDD = 6V VGG = -5V f= 17.7-19.7GHz ZS = ZL = 50Ω 29 18 Conditions Min. Limits Typ. Max. Unit GHz 25 950 -15 dBm dB dB mA mA % dB dB 17.7 - 19.7 31 20 1.0 800 -12 27 -10 -6 G.C.P.: Gain Compression Point Edition 1.1 September 2004 1 FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC P1dB & G1dB vs. VDD 17.7GHz P1dB 17.7GHz G1dB 18.7GHz G1dB 19.7GHz G1dB OUTPUT POWER vs. FREQUENCY VDD = 6V VGG = -5V -2dBm 0dBm 2dBm 4dBm 6dBm 8dBm P1dB VDD = 6V VGG = -5V 18.7GHz P1dB 19.7GHz P1dB 34 32 32 P1dB 30 P1dB(dBm), G1dB(dB) Output Power (dBm) G1dB 30 28 26 24 22 20 18 28 26 24 22 20 4 5 VDD (V) 6 17 18 19 Frequency (GHz) 20 RECOMMENDED BIAS CIRCUIT IMD vs. OUTPUT POWER VDD = 6V VGG = -5V ∆f = 10MHz IM3(17.7GHz) IM3(18.7GHz) IM3(19.7GHz) IM5(17.7GHz) IM5(18.7GHz) IM5(19.7GHz) 1000pF 50Ω VGG VDD 50Ω 1000pF 3 2 RFin 1 1000pF 50Ω 4 5 RFout 6 50Ω 1000pF VGG -20 -10 VDD IMD (dBc) -30 -40 Note 1: The R/C networks are recommended on the bias supply lines, close to the package, to prevent video oscillations which could damage the module. Note 2: Bias point VDD can be connected at the input side or at the output: The two pins named VDD are internally connected. The same is true for VGG. -50 -60 16 18 20 22 24 26 28 Total Output Power (dBm) 2 FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC +j50 +j100 +j25 +j25 S11 +j50 +j100 S22 +j10 +j250 18.5 18.0 19.0 17.5 19.5 +j10 17.5 +j250 0 10 20.0GHz 250 0 10 50Ω 20.0GHz 18.0 250 -j10 -j250 -j10 19.5 19.0 18.5 -j250 -j25 -j50 -j100 -j25 -j50 -j100 FREQUENCY (MHZ) 17200 17300 17400 17500 17600 17700 17800 17900 18000 18100 18.200 18300 18400 18500 18600 18700 18800 18900 19.000 19100 19200 19300 19400 19500 19600 19700 19800 19900 20000 20100 20200 S11 MAG .207 .227 .252 .268 .286 .299 .309 .319 .322 .330 .332 .333 .333 .333 .331 .328 .319 .306 .284 .253 .220 .179 .133 .082 .029 .029 .083 .137 .187 .230 .270 ANG 130.8 128.7 125.6 123.7 121.7 119.7 118.3 116.9 115.6 114.3 113.3 112.1 110.8 109.8 108.2 106.3 103.1 99.4 95.7 91.3 87.0 82.4 76.7 70.0 58.2 -107.2 -120.6 -126.7 -132.5 -137.8 -142.8 S-PARAMETERS VDD = 6V, VGG = -5V S21 S12 MAG ANG MAG ANG 10.960 11.107 11.247 11.327 11.438 11.464 11.474 11.470 11.452 11.402 11.330 11.263 11.175 11.080 10.950 10.763 10.596 10.540 10.579 10.731 10.916 11.040 11.159 11.234 11.277 11.121 10.968 10.756 10.419 9.962 9.507 -67.8 -84.1 -100.4 -116.8 -133.3 -149.7 -166.2 177.4 161.0 144.7 128.5 112.2 96.1 79.9 63.8 48.2 32.8 17.8 2.8 -12.8 -29.0 -45.5 -62.4 -79.8 -97.6 -115.5 -133.3 -151.2 -169.3 172.9 155.8 .004 .004 .004 .004 .004 .004 .003 .003 .003 .003 .003 .003 .003 .003 .003 .003 .003 .003 .003 .003 .003 .003 .003 .003 .003 .002 .002 .002 .002 .001 .001 -124.4 -136.6 -145.7 -158.0 -169.6 -176.9 168.6 158.2 146.8 140.1 129.2 119.6 112.6 104.2 92.0 82.6 76.8 69.6 57.2 48.3 42.0 25.2 14.1 10.3 -5.8 -23.3 -29.0 -31.0 -46.9 -48.3 -40.6 S22 MAG .360 .367 .372 .377 .382 .387 .395 .404 .416 .429 .443 .458 .473 .487 .501 .510 .516 .518 .517 .511 .500 .483 .461 .433 .402 .367 .333 .301 .271 .247 .227 ANG 57.9 48.2 38.0 27.3 16.4 5.2 -6.1 -17.0 -27.4 -37.1 -46.3 -55.4 -63.4 -70.8 -77.7 -84.1 -90.4 -96.1 -101.6 -106.8 -111.7 -116.5 -120.8 -124.3 -127.4 -129.9 -131.0 -131.1 -129.7 -127.5 -124.5 3 FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC Case Style "GJ" Metal-Ceramic Hermetic Package 4-R 1.2±0.15 (0.047) 6-0.3 (0.012) 3.5 Max. (0.137) 1.3±0.15 (0.051) 3 11±0.15 (0.433) 15 (0.591) 7 (0.276) 3.8 (0.149) 4 5 6 7 (0.276) 0.9 (0.035) 1. 2. 3. 4. 5. 6. 7. VDD RFin VGG VGG RFout VDD GND (Flange) Unit: mm(inches) 2 1 7 6±0.15 (0.236) 12±0.15 (0.472) INDEX 1Min. (0.039) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4
FMM5805GJ-1
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,适用于多种嵌入式应用。

2. 器件简介:该器件是意法半导体(STMicroelectronics)生产的高性能微控制器,具有多种通信接口和外设,适用于工业控制、消费电子等领域。

3. 引脚分配:该芯片共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考芯片手册。

4. 参数特性:工作电压范围为2.0V至3.6V,工作频率可达72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:具备多种功能模块,如ADC、DAC、定时器、通信接口(UART、SPI、I2C)等。

6. 应用信息:适用于需要高性能处理和丰富外设的嵌入式系统,如工业自动化、医疗设备、智能家居等。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm。
FMM5805GJ-1 价格&库存

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