FRM5N143DS

InGaAs-APD/Preamp Receiver FEATURES • Integrated Design Optimizes Performance at High Bit Rates up to 10 Gb/s applications. • -25 dBm Typical Sensitivity • -7 dBm Overload Power (typ.) • 27 dB Optical Return Loss (ORL) • Integral Thermistor • Simplifies Receiver Circuit Design • Integrated HBT IC preamp FRM5N143DS APPLICATIONS This 80GHz gain bandwidth product APD detector with HBT preamp is intended to function as an optical receiver for DWDM, SONET, SDH optical fiber systems operating at 10Gb/s. This detector operates at both 1310 and 1550nm. The nominal 10kΩ integral thermistor allows accurate monitoring of the APD temperature and facilitates the design of the APD bias control circuit. It has a typical transimpedance (Zt) value of 1100Ω The detector preamplifier is DC coupled and has a differential electrical output. DESCRIPTION The FRM5N143DS incorporates a high bandwidth InGaAs APD photo diode, a GaAs HBT IC amplifier in a hermetically sealed butterfly type package. The APD is processed with modern MOVPE techniques resulting in reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd YAG welding. It has differential output with DC coupling. Edition 1.1 July 2004 1 FRM5N143DS ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Parameter Storage Temperature Operating Temperature Supply Voltage APD Reverse Voltage APD Reverse Current Symbol Tstg Top Vss VR IR InGaAs-APD/Preamp Receiver Ratings -40 to +85 0 to +70 -6 to 0 0 to VB (Note 1) 1.0 Unit °C °C V V mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,550nm, Vss=-5.2V, unless otherwise specified) Parameter APD Responsivity APD Breakdown Voltage Temperature Coefficient of VB AC Transimpedance Symbol R15 VB Γ Zt BW Test Conditions 1,550nm, M=1 ID=10µA (Note 2) RL=50Ω, f=130MHz, RL=50Ω, M=9, -3dB from 130MHz, Pin = -20dBm NRZ, 10Gb/s, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value NRZ, 10Gb/s, PRBS=223-1, B.E.R.=10-10, M = 3 Vss=0V Vss=0V Min. 0.65 20 0.03 800 Limits Typ. 0.7 30 0.05 1100 Max. 35 0.07 1400 Unit A/W V V/°C Ω GHz Bandwidth 7.5 8.0 - Sensitivity Pr - -25 -24 dBm Maximum Overload Po ORL Iss Vss Rtr B -8 -7 - dBm Optical Return Loss Power Supply Current Power Supply Voltage Thermistor Resistance Thermistor B Constant 27 -5.46 9.5 3,800 110 -5.2 10 3,900 130 -4.94 10.5 4,000 dB mA V kΩ K Note: (1) VB differs from device to device. VB data is attached to each devices. (2) Γ=dVB/dTC 2 InGaAs-APD/Preamp Receiver Fig. 1 Multiplication vs. Photocurrent 1.0E-02 Tc=25°C Vss=-5.2V Pin = -7dBm -10dBm -13dBm -20dBm -27dBm FRM5N143DS Fig. 2 Multiplication Characteristics 100 Vss=-5.2V Ipo=2µA 0°C 70°C Photocurrent (A) 1.0E-03 Multiplication Factor (M) 10 1.0E-04 25°C 1 1.0E-05 1.0E-06 1 10 20 30 40 0.1 0 10 20 30 40 Reverse Voltage VR(V) Reverse Voltage VR(V) Fig. 3 Relative Frequency Response Tc = 25°C Vss=-5.2V RL=50Ω Pin=-27dBm λ = 1,550nm Fig. 4 Multiplication vs. Bandwidth 100 GB Product 80GHz Tc=25°C Vss=-5.2V RL=50Ω λ=1,550nm Pin=-27dBm Relative Response (3dB/div) M=6 M=3 Bandwidth (GHz) M=9 10 1 5 10 15 1 1 10 100 Frequency, f (GHz) Fig. 5 Bit Error Rate 10-3 λ=1,550nm 9.95328Gb/s, NRZ duty, mark density=0.5 Vss=-5.2V M=optimum Multiplication Factor (M) 10-4 Bit Error Rate 10-5 10-6 10-7 10-8 10-10 10-12 -30 0°C 70°C 25°C -28 -26 -24 -22 Received Optical Power (dBm) 3 FRM5N143DS -23 InGaAs-APD/Preamp Receiver Fig. 6 Sensitivity vs. Multiplication Factor Minimum Sensitivity, Pr (dBm) Mopt: M = 8 -24 -25 -26 -27 0 5 10 15 20 Multiplication Factor, M Fig. 7 Input Wave Form 1,550nm, 9.9532Gb/s NRZ, 223-1 PRBS, duty and mark density=0.5 20psec/div Fig. 8 Output Wave Form Tc=25°C, RL=50Ω Pin=-26dBm, Vss=-5.2V, M=9 DATA DATA 20psec/div 4 InGaAs-APD/Preamp Receiver FRM5N143DS Fig. 9 Output Wave Form Tc=25°C, RL=50Ω, Pin=-20dBm Vss=-5.2V, M=3 20psec/div Fig. 10 Output Wave Form Tc=25°C, RL=50Ω, Pin=-7dBm, Vss=-5.2V, M=3 20psec/div 5 FRM5N143DS InGaAs-APD/Preamp Receiver FRM5N143DS Recommended Circuit 6.8nF 0.47µF 47Ω #16 #14 #13 #12 #11 50Ω #8 (OUT) DC-coupled 50Ω PD 20 to 50Ω #9 (OUT) 220pF #2,7,10 (GND) (>10nF) (>10nF) #1 (VR) #3 (Vss) 6 InGaAs-APD/Preamp Receiver “DS” PACKAGE 5XP1.57=6.35 11.5 12-0.4 6 1 # FRM5N143DS UNIT: mm PIN DESIGNATIONS PD Bias (+) Case Ground Power Supply For Preamp NC NC NC Case Ground Output (-) Output (+) Case Ground DC Feedback Out Feedback 1 Feedback 2 DC Feedback In NC Thermistor For APD NC For Pin 28.83±0.5 ø5.4 ø5.0 1.27±0.1 2.0±0.3 3.4 11 16 8.7 9.1 15.45 20.25 12.7 4-ø2.2 3.8 +0.3 -0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 20.83 25.83 29.83 0.635 3.175 2-0.4 2-0.2 ø0.9 6.9 L For further information please contact: 3.4 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 7