FS0201MN00RB

FS02...N SURFACE MOUNT SCR SOT223 (Plastic) On-State Current 1.25 Amp Gate Trigger Current < 200 µA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER On-state Current* Average On-state Current* Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25 ºC tp = 10ms, Half Cycle IGR = 10 µA, Tj = 25 ºC 20 µs max. 20 µs max. 20 ms max. Min. 1.25 0.8 25 22.5 2.5 8 1.2 3 0.2 +125 +150 260 Max. Unit A A A A A2s V A W W ºC ºC ºC IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld -40 -40 10s max. * with 5 cm2 copper (e= 35µm) surface under tab. SYMBOL PARAMETER Repetitive Peak Off State Voltage CONDITIONS RGK = 1 KΩ B 200 VOLTAGE D 400 M 600 N 800 Unit V VDRM VRRM Jun - 02 FS02...N SURFACE MOUNT SCR Electrical Characteristics SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage On-state Threshold Voltage Dinamic Resistance Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX VD = VDRM , RGK = 1KΩ, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX Tj = 125 ºC MAX Tj = 125 ºC MAX VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX VD = VDRM , RL = 3.3KΩ, RGK = 1KΩ, MIN Tj = 125 ºC IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC VD = 0.67 x VDRM , RGK = 1KΩ, Tj = 125 ºC MAX MAX MIN MIN 01 1 20 SENSITIVITY 04 15 50 02 200 500 5 1.45 0.9 150 0.8 0.1 5 6 15 15 50 25 60 10 20 03 20 200 Unit µA µA V V mΩ V V mA mA V/µs A/µs IGT IDRM / IRRM VTM VT(O) rd VGT VGD IH IL dv / dt di / dt Rth(j-l) Rth(j-a) Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient ºC/W ºC/W PART NUMBER INFORMATION F FAGOR SCR CURRENT S 02 01 B N 00 RB PACKAGING FORMING CASE VOLTAGE SENSITIVITY Jun - 02 FS02...N SURFACE MOUNT SCR Fig. 1: Maximum average power dissipation versus average on-state current P (W) 1.4 360 º Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T tab). P (W) 1.4 Rth (j-l) T tab (ºC) -85 1.2 1.0 0.8 0.6 0.4 α 1.2 DC 1.0 Rth (j-a) α = 180 º α = 120 º α = 90 º -95 0.8 -105 0.6 0.4 -115 α = 60 º 0.2 0.0 0 α = 30 º 0.2 IT(AV)(A) 0.0 0 20 40 60 80 -125 Tamb (ºC) 100 120 140 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Fig. 3: Average on-state current versus tab temperature I T(AV) (A) 1.6 DC Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) 10.0 9.0 8.0 7.0 6.0 Igt α = 180 º 0.10 Standard foot print, e (Cu) = 35 µm T lead (ºC) 0.01 1E-3 tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 25 Tj initial = 25 ºC Ih (Tj) Ih (Tj = 25 ºC) 20 15 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj (ºC) 0 1 10 100 1000 Number of cycles Ih 10 5 Jun - 02 FS02...N SURFACE MOUNT SCR Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 100 Tj initial = 25 ºC Tj initial 25 ºC ITSM Fig. 8: On-state characteristics (maximum values). ITM(A) 100 10 Tj max 10 I2 t 1 Tj max Vto = 1.05 V Rt = 0.150 Ω 1 1 10 tp(ms) 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VTM(V) PACKAGE MECHANICAL DATA SOT223 (Plastic) A 16º max. (4x) B C 10º max. H E D F I J K REF. A B C D E F G H I J K Min. 6.30 6.70 3.30 2.95 0.65 1.50 0.50 0.25 G DIMENSIONS Milimeters Typ. 6.50 7.00 3.50 4.60 2.30 3.00 0.70 1.60 0.60 0.02 0.30 Max. 6.70 7.30 3.70 3.15 0.85 1.70 0.70 0.05 0.35 Weight: 0.11 g FOOT PRINT 3.3 1.5 (3x) 1 2.3 6.4 1.5 4.6 Jun - 02