FT0808BD00TR

FT08...D SURFACE MOUNT TRIAC DPAK (Plastic) On-State Current 8 Amp Gate Trigger Current < 5 mA to < 50 mA Off-State Voltage MT2 200 V ÷ 600 V MT1 MT2 G This series of TRIACs uses a high performance PNPN technology. These devices are intended for AC control applications using surface mount technology. The high commutation performances combined with high sensitivity, make them perfect in all applications like solid state relays, home appliances, power tools, small motor drives... Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER RMS On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Peak Gate Dissipation Gate Dissipation Critical rate of rise of on-state current Operating Temperature Range Storage Temperature Range Lead Temperature for soldering CONDITIONS All Conduction Angle, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10 ms, Half Cycle 20 µs max. 20 µs max. 20 ms max. IG = 2 x IGT Tr ≤ 100 ns, F = 120 Hz Tj = 125 ºC Min. 8 84 80 36 4 10 1 50 -40 -40 10s max. +125 +150 260 Max. Unit A A A A 2s A W W A/µs ºC ºC ºC IT(RMS) ITSM ITSM I2t IGM PGM PG(AV) di/dt Tj Tstg TL SYMBOL PARAMETER Repetitive Peak Off State Voltage B 200 VOLTAGE D 400 M 600 Unit V VDRM VRRM Jun - 02 FT08...D SURFACE MOUNT TRIAC Electrical Characteristics SYMBOL PARAMETER Gate Trigger Current CONDITIONS VD = 12 VDC , RL = 30Ω Tj = 25 ºC VR = VRRM , Tj = 125 ºC Tj = 25 ºC Quadrant Q1÷Q3 SENSITIVITY 07 08 MAX 5 10 7 MAX MAX MAX MAX MAX MAX MIN MAX 10 15 MAX 10 20 MAX 15 30 MIN 20 100 Unit 11 14 16 25 35 50 mA mA mA 1 5 µA 0.85 V 60 mΩ 1.55 V 1.3 V 0.2 V 25 35 50 mA 25 50 80 mA 50 60 80 200 400 250 V/µs IGT (1) IDRM /IRRM Off-State Leakage Current Vto (2) Rd(2) VTM (2) VGT VGD IH (2) IL Threshold Voltage Dynamic Resistance On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Tj = 125 ºC Tj = 125 ºC IT = 11 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 30Ω, Tj = 25 ºC Q1÷Q3 VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Q1÷Q3 IT = 100 mA , Gate open, Tj = 25 ºC IG = 1.2 IGT, Tj = 25 ºC Q1,Q3 Q2 dv / dt (2) Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open Tj = 125 ºC (dI/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs (dv/dt)c= 10 V/µs without snubber Tj = 125 ºC Tj = 125 ºC Tj = 125 ºC MIN 3.5 5.4 9 9 9 A/ms MIN 1.8 2.8 4.5 4.5 4.5 MIN - 4.5 4.5 1.6 70 ºC/W ºC/W Rth(j-c) Rth(j-a) Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient (1) Minimum IGT is guaranted at 5% of IGT max. (2) For either polarity of electrode MT2 voltage with reference to electrode MT1. PART NUMBER INFORMATION F FAGOR SCR CURRENT T 08 08 B D 00 TR PACKAGING FORMING CASE VOLTAGE SENSITIVITY Jun - 02 FT08...D SURFACE MOUNT TRIAC Fig. 1a: Maximum power dissipation versus RMS on-state current (FT0807.D, FT0808.D). P (W) 10 α = 180 º Fig. 1b: Maximum power dissipation versus RMS on-state current (FT0811.D, FT0814.D). P (W) 10 α = 180 º 8 α = 120 º 8 α = 120 º 6 α = 90 º 6 α = 90 º 4 α = 60 º 4 α = 60 º 2 α = 30 º α 180 º α α = 30 º 2 α 180 º α 0 0 1 2 3 4 5 6 7 8 IT(RMS)(A) 0 0 1 2 3 4 5 6 7 8 IT(RMS)(A) Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 10 Rth=10 ºC/W Rth=5 ºC/W Fig. 3: RMS on-state current versus ambient temperature I T(RMS) (A) 9 Rth(j-a) = Rth(j-c) T case (ºC) -110 8 7 6 8 Rth=0 ºC/W 6 Rth=15 ºC/W -115 5 4 -120 3 2 α = 180 º Rth(j-a) = 55 ºC/W S(Cu) = 1.75 cm2 α = 180 º 4 2 1 -125 Tamb (ºC) 0 0 25 50 75 100 125 Tamb (ºC) 50 75 100 125 0 0 25 Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. K = [Zth(j-c) / Rth (j-c)] 1.0 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). IGT, IH (Tj) / IGT, IH (Tj = 25 ºC) 2.5 2.0 0.5 1.5 IGT 1.0 0.2 0.5 tp (s) 1E-2 1E-1 1E+0 IH 0.1 1E-3 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj (ºC) Jun - 02 FT08...D SURFACE MOUNT TRIAC Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 80 70 60 50 40 30 20 10 0 1 10 100 1000 Number of cycles 10 1 2 5 10 tp(ms) I2 t Tj initial = 25 ºC F = 50 Hz Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 500 Tj initial = 25 ºC ITSM 100 Fig. 8: On-state characteristics (maximum values). Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm). Rth(j-a) (ºC/W) 100 ITM(A) 100.0 80 10.0 Tj = Tj max. Tj max Vto = 0.8 V Rd = 60 mΩ 60 Tj = 25 ºC 40 1.0 20 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTM(V) 0 0 2 4 6 8 10 12 14 16 18 20 S(Cu) (cm2) Jun - 02 FT08...D SURFACE MOUNT TRIAC PACKAGE MECHANICAL DATA DPAK TO 252-AA REF. 8º±2º A ø1x0.15 E L3 8º±2º D H 1.6 L4 8º±2º L e 4.57 Typ. b L2 A1 1.067±0.013 8º±2º 8º±2º D1 c2 E1 A A1 b c c1 c2 D D1 E E1 e H L L1 L2 L3 L4 Min. 2.18 0 0.64 0.46 0.46 5.97 5.21 6.35 5.20 9.40 1.40 2.55 0.46 0.89 0.64 DIMENSIONS Milimeters Nominal 2.3±0.18 0.12 0.75±0.1 0.8±0.013 6.1±0.1 6.58±0.14 5.36±0.1 2.28BSC 9.90±0.15 2.6±0.05 0.5±0.013 1.20±0.05 0.83±0.1 Max. 2.39 0.127 0.89 0.61 0.56 6.22 5.52 6.73 5.46 10.41 1.78 2.74 0.58 1.27 1.02 Marking: type number Weight: 0.2 g FOOT PRINT 6.7 6.7 3 3 1.6 2.3 2.3 1.6 Jun - 02