GBJ601

SIYU R 塑封硅整流桥堆 反向电压 50---1000V 正向电流 6.0 A 特征 Features .134(3.4) .122(3.1) .189(4.8) .173(4.4) .150(3.8) .134(3.4) .382(9.7) .366(9.3) KBJ601 ...... KBJ610 Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A ·低的反向漏电流 Low reverse leakage ·较强的正向浪涌承受能力 High forward surge capability ·浪涌承受能力：170 A Surge overload rating:170 Amperes peak .602(15.3) .578(14.7) .157 (4.0) ￠.134(8.4) .122(3.1) .995(25.3) .983(24.7) .057(1.45) .041(1.05) .083(2.1) .069(1.7) .043(1.1) .035(0.9) + ~ ~ .708(18.0) .669(17.0) 机械数据 Mechanical Data .114(2.8) .098(2.5) ·封装: 塑料封装 Case: Molded Plastic ·极性: 标记模压或印于本体 Polarity: Symbols molded or marked on body ·安装位置: 任意 ·重量: 4.6 克 Mounting Position: Any Weight:4.6 Grams .074(1.9) .059(1.5) .146(3.7) .130(3.3) .031(0.8) .023(0.6) .303(7.7) .303(7.7) .303(7.7) .287(7.3) .287(7.3) .287(7.3) Unit：inch（mm） 极限值和温度特性 TA = 25℃ 除非另有规定。 Maximum Ratings & Thermal Characteristics 符号 最大可重复峰值反向电压 Maximum repetitive peak reverse voltage 最大均方根电压 Maximum RMS voltage 最大直流阻断电压 Maximum DC blocking voltage 最大正向平均整流电流 加散热片TC =111℃ Maximum average forward rectified current 无散热片Ta=25℃ Ratings at 25℃ ambient temperature unless otherwise specified. KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610 单位 V V V A A µA ℃/W Symbols GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610 Unit VRRM VRMS VDC IF(AV) IFSM IR(AV) RθJA Tj, TSTG 100 70 100 200 140 200 300 210 300 400 280 400 6.0 2.8 170 30 10 600 420 600 800 560 800 1000 700 1000 峰值正向浪涌电流 8.3ms单一正弦半波 Peak forward surge current 8.3 ms single half sine-wave @TA = 75℃ 最大反向峰值电流 Maximum peak reverse current full cycle 典型热阻 Typical thermal resistance 工作结温和存储温度 Operating junction and storage temperature range -50 --- +150 ℃ 电特性 TA = 25℃ 除非另有规定。 Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. 符号 最大正向电压 Maximum forward voltage KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610 单位 V µA Symbols GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610 Unit IF = 3.0A TA= 25℃ TA=100℃ VF 1.0 10 500 40 最大反向电流 Maximum reverse current 典型结电容 VR = 4.0V, f = 1MHz Type junction capacitance IR Cj pF - 125 - 大昌电子 DACHANG ELECTRONICS SIYU R 特性曲线 Characteristic Curves 正向特性曲线（典型值） TYPICAL FORWARD CHARACTERISTIC 10 KBJ601...... KBJ610 正向电流降额曲线 FORWARD CURRENT DERATING CURVE 4.0 平均正向电流 IF(AV) (A) IF(A) Average Forward Rectified Current (A) on glass-epoxi substrate IF Instantaneous Forward Current (A) + ~ ~ - Tl=150℃ 3.0 P.C.B. soldering land 5mmф sine wave R-load free in air 正向电流 IF(A) 1 Tl=25℃ 2.0 1.0 Pulse measurement per diode 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 00 40 80 120 160 正向电压 VF(V) VF Instantaneous Forward Voltage (V) 环境温度 Ta(°C) Tamb, ambient temperature (°C) 功率损耗曲线 FORWARD POWER DISSIPATION 浪涌特性曲线（最大值） MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT 240 IFSM 14 200 10mS 10mS 12 non-repetitive Tj=25℃ before FORWARD POWER DISSIPATION PF(W)) IFSM Peak Forward Surge Current (A) 1 Cycle 10 8 6 4 2 0 0 峰值正向浪涌电流 IFSM(A) 120 80 功率损耗 P(W) 160 40 Sine wave Tj=150℃ 1 2 3 4 5 6 7 0 0 2 5 10 20 通过电流的周期 50 100 Number of Cycles at 60 Hz. 正向电流降额曲线 FORWARD CURRENT DERATING CURVE 10 Tc-sensing point 平均整流电流 I0(A) AVERAGE RECGIFIED FORWARD CURRENT Io(A) 平均正向电流 IF(AV) (A) IF(A) Average Forward Rectified Current (A) 9 + ~ ~ - 8 7 6 5 4 3 2 1 00 Tc sine wave R-load with heatsink 40 80 120 160 管体温度 TC(°C) Case Temperature Tc(℃) 大昌电子 DACHANG ELECTRONICS - 126 -