GS75232

GS75232 Multiple RS-232 Drivers & Receivers Product Description The GS75232 are monolithic device containing 3 independent drives and 5 receivers. These are designed to interface between date terminal equipment and date communication equipment as designed by EIA-232-D. Features n n Meets standard EIA-232-D (Revision of RS-232-C) Drivers - Current Limited Output : 10 mA Typical - Power-off Output Impedance : 300 Ω Min - Slew Rate Control by Load Capacitor - Flexible Supply Voltage Range DY1 DA1 VCC+ VCC RA1 RY1 RA2 RY2 RA3 RY3 - Input Compatible with Most TTL and DTL Circuits n Receivers - Input Resistance : 3 kΩ to 7 kΩ - Input Signal Range : ± 30 V - Built-in Input Hysteresis (Double Threshold) DY2 DA2 RA4 RY4 DY3 DA3 RA5 RY5 VCC - GND GS75232 Pin Description Name VCC+ DA1 DA2 DA3 VCC RA1 RA2 RA3 RA4 RA5 Pin No 1 16 15 13 20 2 3 4 7 9 Function Driver Section Supply + Name VCCDY1 DY2 DY3 GND RY1 RY2 RY3 RY4 RY5 Pin No 10 5 6 8 11 19 18 17 14 12 Function Driver Section Supply Driver Output Ground Driver Input Receiver Section Supply Receiver Input Receiver Output www.globaltechsemi.com 1 GS75232 GS75232 Globaltech Semiconductor Representative Schematic Diagram VCC+ 8K2 6K2 DA 70 300 3K6 VCC DY 2K 9K 5K 2K DY DA 10K 7K 70 4K 10K VCC- Driver Receiver Ordering Information Device GS75232S GS75232SS GS75232TS “ F” means Lead Free part. *Request for other voltages, please contact factory directly. Package SOIC-20 SSOP-20 TSSOP-20 Absolute Maximum Ratings Symbol VCC+ VCCVCC VI (Driver) VI (Reciver) VO (Driver) PT TSTG Top Parameter Supply Voltage Supply Voltage Supply Voltage Input Voltage Input Voltage Output Voltage Continuous Power Dissipation (Below 25 o C) Storage Temperature Operating Temperature Rating 15 -15 10 -15 to +7 ± 30 -15 to +15 1.0 -65 to +175 0 to +75 Unit V V V V V V W o C o C www.globaltechsemi.com 2 GS75232 GS75232 Globaltech Semiconductor Electrical Characteristics Supply Current (V CC = 5V, TA = 25 OC ) Symbol ICC+ Parameter Supply Current from VCC+ Test Condition VCC+ = 9 V VIN = 1.9V No Load VIN = 0.8V VCC+ = 12 V VIN = 1.9V No Load VIN = 0.8V VCC+ = 15 V VIN = 1.9V No Load VIN = 0.8V VCC- = - 9 V VIN = 1.9V No Load VIN = 0.8V VCC- = - 12 V VIN = 1.9V No Load VIN = 0.8V VCC- = - 15 V VIN = 1.9V No Load VIN = 0.8V VCC = 5 V VIN = 5.0V Min Max 15 4.5 19 5.5 25 9 -15 -3.2 -19 -3.2 -25 -3.2 30 Unit mA ICC- Supply Current from VCC- mA ICC Supply Current from VCC mA Receiver Section Symbol V T+ VTParameter Positive-Going Threshold Voltage Negative-Going Threshold Voltage High Level Output Voltage Low Level Output Voltage High-Level Input Current Low-Level Input Current Short-Circuit Output Current Test Conditions Min 1.75 0.75 VI = 0.75V, IO L =- 0.5mA Input Open, IO L = - 0.5 mA VI = 3V, IO L = 10 mA VI = 25V VI = 3V VI = -25V VI = -3V 2.6 2.6 Max 2.25 1.25 5 V 5 V mA mA mA 0.45 3.6 8.3 0.43 -3.6 -8.3 -0.43 -3 (tip) Unit V V VO H VO L IIH IIL IOS Receiver Switching Characteristic (V CC= 5V) Symbol Parameter Test Conditions Propagation Delay Time, CL = 15 ρ F tPLH Low-To-High-Level Output RL = 3.9 kΩ Propagation Delay Time, CL = 15 ρ F tPHL High -To- Low -Level Output RL = 390 kΩ Transition Time, CL = 15 ρ F tTLH Low-To-High-Level Output RL = 3.9 kΩ Transition Time, CL = 15 ρ F tTHL High -To- Low -Level Output RL = 390 kΩ Min - Max 150 50 175 20 Unit ns ns ns ns www.globaltechsemi.com 3 GS75232 GS75232 Globaltech Semiconductor Driver Section Symbol VIH VIL Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Test Conditions VCC+ = 9 V VCC- = - 9 V Min 1.9 VIL = 0.8V RL = 3 kΩ VCC+ = 9 V VCC- = - 9 V VCC+ = 13.2 V VCC- = - 13.2 V VCC+ = 9 V VCC- = - 9 V VCC+ = 13.2 V VCC- = - 13.2 V 6 9 -6 Max 0.8 -6 -9 10 - 1.6 -12 µA mA mA V Unit V V V VO H VO L Low Level Output Voltage High Level Input Current Low Level Input Current Short Circuit Output Current at High Level Short Circuit Output Current at Low Level Output Resistance, Power Off VIH = 1.9V RL = 3 kΩ VI = 5V VI = 0 VI = 0.8V VO = 0 VI = 1.9V VO = 0 IIH IIL IOS(H) IOS(L) RO 6 300 12 - mA Ω VCC+ = 0, VCC- = 0 VO = - 2V to 2V Driver Switching Characteristic (V CC+ = 9V, V CC- = -9V TA = 25 OC) Parameter Test Conditions Min Max Unit Propagation Delay Time, ns 500 Low-To-High-Level Output tPHL Propagation Delay Time, ns 175 High -To- Low -Level Output RL = 3 kΩ tTLH Transition Time, CL = 15 µF 100 ns Low-To-High-Level Output See Figure 1 * tTHL Transition Time, 75 ns High -To- Low -Level Output* tTLH Transition Time, 2.5 µs Low-To-High-Level (tip) RL = 3 kΩ to 7 kΩ Output** CL = 2500 ρ F tTHL Transition Time, See Figure 1 3.0 µs High-To-Low -Level (tip) Output** * - Measured between 10 % and 90 % Points of Output Waveform ** - Measured between +3V and -3V Points on the Output Waveform (EIA-232-D Condition) Symbol tPLH www.globaltechsemi.com 4 GS75232 GS75232 Receiver Section Symbol Parameter Positive-Going V T+ Threshold Voltage Negative-Going VTThreshold Voltage VO H VO L IIH IIL IOS High Level Output Voltage Low Level Output Voltage High-Level Input Current Low-Level Input Current Short-Circuit Output Current (VCC = 5V) Test Conditions CL RL CL RL CL RL CL RL = = = = = = = = 15 ρ F 3.9 kΩ 15 ρ F 390 kΩ 15 ρ F 3.9 kΩ 15 ρ F 390 kΩ Globaltech Semiconductor Test Conditions Min 1.75 0.75 Max 2.25 1.25 5 Unit V V VI = 0.75V, IO L =- 0.5mA Input Open, IO L = - 0.5 mA VI = 3V, IO L = 10 mA VI = 25V VI = 3V VI = -25V VI = -3V 2.6 2.6 V 5 V mA mA mA 0.45 3.6 8.3 0.43 -3.6 -8.3 -0.43 -3 (tip) Receiver Switching Characteristic Symbo Parameter l Propagation Delay Time, tPLH Low-To-High-Level Output Propagation Delay Time, tPHL High -To- Low -Level Output Transition Time, tTLH Low-To-High-Level Output Transition Time, tTHL High -To- Low -Level Output Min - Max 150 50 175 20 Unit ns ns ns ns Typical Performance Characteristics 10ns DRIVER PULSE GENERATOR (See Note A) RL CL 1.5V OUTPUT INPUT 1.5V 3V 0V tPLH OUTPUT 50% tPLH VOH 50% VOL tTHL tTLH Voltage Waveform RECEIVER OUTPUT RL PULSE GENERATOR (See Note A) CL INPUT 10ns 90% 10% 50% 90% 3V 50% 10% 0V VOH 1.5V 1.5V VOL tPLH OUTPUT tPLH tTHL tTLH Tw=20us, Voltage Waveform A. The pulse generator has the following characteristics. f = 200 KHz, ZO = 50 Ω B. C included probe and jig capacitance. C. All diodes are 1N3064 or equivalent. Fig1. Propagation and Transition Times Note www.globaltechsemi.com 5 GS75232 GS75232 Globaltech Semiconductor Applications Information +5V UART +12V DCD DSR S IN RTS S OUT 8 4 CTS DTR RI 9 5 1 6 2 7 3 RS-232 DB-9 Connector SIO Card -12V www.globaltechsemi.com 6 GS75232 GS75232 Globaltech Semiconductor Package Dimensions SOIC-20L D θ1 θ2 + E R1 R GAUGE PLANE L2 E1/2 E/2 E1 L θ1 L1 θ PIN 1 MARKING e b c h A A2 A1 Dimensions SYMBOL A A1 A2 b b1 c D E E1 e L L1 L2 R R1 h u u1 u2 MIN 2.35 0.10 2.05 0.31 0.27 0.20 0.40 0.07 0.07 0.25 08 58 08 Millimeters TYP 12.80 10.30 7.50 1.27 1.40 0.25 MAX 2.65 0.30 2.55 0.51 0.48 0.33 1.27 0.75 88 158 - www.globaltechsemi.com 7 GS75232 GS75232 Globaltech Semiconductor SSOP-20L D E/2 E1/2 E1 E R GAUGE PLANE L PIN 1 MARKING e b L1 θ SEATING PLANE L2 A A2 A1 c Dimensions SYMBOL A A1 A2 b c D E E1 e L L1 L2 R u Millimeters MIN MAX 2.0 0.05 1.65 1.85 0.22 0.38 0.09 0.25 6.90 7.50 7.40 8.20 5.00 5.60 0.65 (TYP) 0.55 0.95 1.25 (TYP) 0.25 (TYP) 0.09 08 88 Inches MIN MAX .078 .002 .065 .073 .008 .015 .003 .010 .271 .295 .290 .323 .197 .220 .026 (TYP) .021 .037 .050 (TYP) .010 (TYP) .003 08 88 www.globaltechsemi.com 8 GS75232 GS75232 Globaltech Semiconductor TSSOP-20L e 20 11 E/2 θ2 E1 E + S R1 R GAUGE PLANE PIN 1 MARKING 123 e/2 D A A2 A1 c b 10 L θ3 L1 θ1 L2 Dimensions SYMBOL A A1 A2 b b1 c D E E1 e L L1 R R1 S u1 u2 u3 MIN 0.05 0.80 0.19 0.19 0.09 6.40 4.30 0.45 0.09 0.09 0.20 08 Millimeters TYP 1.00 0.22 6.50 6.40 4.40 0.65 0.60 1.00 128 128 MAX 1.20 0.15 1.05 0.30 0.25 0.20 6.60 4.50 0.75 88 - www.globaltechsemi.com 9 GS75232 GS75232 Globaltech Semiconductor Notice Information furnished is believed to be accurate and reliable. However Globaltech Semiconductor assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Globaltech Semiconductor. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information without express written approval of Globaltech Semiconductor. (Revise Date:2005/10/26 Version_A1) www.globaltechsemi.com 10 GS75232