LED1200-35M32

LED1200-35M32 Stem type LED with high output power LED1200-35M32 is an InGaAsP LED mounted on a TO-18 stem with a spherical glass lens being designed for high output power uses. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm. ♦Outer dimension [Unit:mm] ♦Features 1) High radiated intensity 2) High Reliability ♦Specifications 1) Product Name 2) Type No. 3) Chip Spec. (1) Material (2) Peak Wavelength 4) Package (1) Type (2) Lens (3) Cap NIR LED Lamp LED1200-35M32 InGaAs/InP 1200 nm TO-18 stem Spherical glass lens Gold plated ♦Absolute Maximum Ratings Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 120 mW Ta = 25 °C Forward Current IF 100 mA Ta = 25 °C Pulse Forward Current IFP 1000 mA Ta = 25 °C Reverse Voltage VR 3 V Ta = 25 °C Operating Temperature TOPR -20 ~ +90 °C Storage Temperature -30 ~ +100 °C TSTG Soldering Temperature TSOL 260 °C ‡Pulse Forward Current condition: Duty = 1% and Pulse Width = 10 µs. ‡Soldering condition : Soldering condition must be completed within 3 seconds at 260°C ♦Electro-Optical Characteristics Item Symbol Condition Minimum Typical Maximum Forward Voltage VF IF = 20 mA 0.8 1.3 Reverse Current IR VR = 3 V 10 Total Radiated Power PO IF = 20 mA 0.8 1.8 1150 1200 1250 Peak Wavelength IF = 20 mA λP 100 Half Width IF = 20 mA ∆λ Viewing Half Angle IF = 20 mA ±15 θ 1/2 Rise Time tr IF = 20 mA 10 Fall Time tf IF = 20 mA 10 ‡Radiated Power is measured by Ando Optical Multi Meter AQ2140 & AQ2742 Unit V uA mW nm nm deg. ns ns