M75010

一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. SMOKE DETECTOR PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT GENERAL DESCRIPTION M75010 The M75010 is a very low-power IC providing all of the required features for a photoelectric type smoke detector. This device can be used in conjunction with an infrared photoelectric chamber to sense scattered light from smoke particles. A variable-gain photo amplifier can be directly interfaced to an infrared emitter / detector pair. The amplifier gain levels are determined by two external capacitors that are then internally selected depending on the operating mode. Low gain is selected during standby and timer modes. During a local alarm this low gain is increased ( internally ) by ~ 10% to reduce false triggering. High gain is used during the push-button test and during standby to periodically monitor the chamber sensitivity. FEATURES ‧ Interconnect up to 50 detectors. ‧ Piezoelectric horn driver. ‧ All internal low-battery detection. ‧ Power-on reset. ‧ Built-in circuits to reduce false triggering. ‧ 6V to 12V operating voltage range. ‧ ESD-Protection circuitry on all pins. APPLICATIONS ‧ Smoke detector. PIN ASSIGNMENT M75010P C1 C2 DETECT STROBE VDD IRED I/O HORN1 8 9 1 16 TEST TRIP VSS OSCR OSCC LED FEEDBACK HORN2 1/10 2006-01-25 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. SMOKE DETECTOR PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT ABSOLUTE MAXIMUM RATING Parameter Supply Voltage Range Input Voltage Range Input Current Operating Temperature Range Storage Temperature Range Sym. VDD VIN IIN TA TS Rating -0.5 ~ 13 -0.3 to VDD + 0.3 10 -25 ~ 75 -55 to 125 M75010 Unit V V mA ℃ ℃ PIN AND CIRCUIT DESCRIPTION Pin No Pin Name Description A capacitor connected to this pin determines the gain of the photo amplifier during the push-to-test mode and during the chamber monitor test. A typical value for this high-gain mode is 0.047μF but should be selected based on the photo chamber background reflections reaching the detector and the desired level of sensitivity. Ae ≒ 1 + ( C1 / 10 ) where C1 is in pF. Ae should not exceed 10,000. A capacitor connected to this pin determines the gain of the photo amplifier during standby. A typical value for this low-gain mode is 4700 pF but should be selected based on a specific photo chamber and the desired level of sensitivity to smoke. Ae ≒ 1 + ( C2 / 10 ) where C2 is in pF. Ae should not exceed 10,000. This is the input to the photo amplifier and is connected to the cathode of the photo diode. The photo diode is operated at zero bias and should have low darkleakage current and low capacitance. This output provides a strobed , regulated voltage of VDD-5V. The minus side of all internal and external photo amplifier circuitry is referenced to this pin. This pin is connected to the most-positive supply potential and can range from 6V to 12V with respect to VSS. This output provides a pulsed base current for the external NPN transistor , which drives the IR emitter. Its beta should be greater than 100. The IRED output is not active , to minimize noise impact , when the horn and visible LED outputs are active. A connection at this pin allows multiple smoke detectors to be interconnected. If a local smoke condition occurs , this pin is driven high. As an input , this pin is sampled nominally every 1.35 seconds during standby. Any local-alarm condition causes this pin to be ignored as an input. 7 I/O An internal NMOS device acts as a charge dump to aid in applications involving a large ( distributed ) capacitance. The charge dump is activated at the end of local or test alarm. This pin also has an on-chip pull-down resistor and must be left unconnected if not used. In application , there is a series currentlimiting resistor to other smoke alarms. These three pins are used in conjunction with external passive components and a self-resonating piezoelectric transducer. HORN1 is connected to the piezo metal support electrode ; the complementary output , HORN2 , is connected to the ceramic electrode and the FEEDBACK input to the feedback electrode. 1 C1 2 C2 3 4 5 DETECT STROBE VDD 6 IRED 8 9 10 HORN1 HORN2 A continuous modulated tone indicates either a local or remote alarm condition. A short ( 10ms ) chirp FEEDBACK indicates a low-battery chirp occurs almost simultaneous with the visible LED flash. If the FEEDBACK pin is not used , it must be connected to VDD or VSS. 2/10 2006-01-25 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. SMOKE DETECTOR PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT M75010 This open-drain NMOS output is used to directly drive a visible LED. The low-battery test does not occur coincident with any other test or alarm signal. The LED also indicates detector status as follows (with component values as in the typical application , all times nominal)： 11 LED Standby ─ Pulses every 43 seconds. Local Smoke ─ Pulses every 0.67 seconds. Remote Alarm ─ No pulses. Test Mode ─ Pulses every 0.67 seconds. 12 OSCC A capacitor between this pin and VDD , along with a parallel resistor , forms part of a two-terminal oscillator and sets the internal clock low time. With component values as shown , this nominal time is 11 ms and essentially the oscillator period. A resistor between this pin and OSCC (pin 12 ) is part of the two-terminal oscillator and sets the internal clock high time , which is also the IRED pulse width. With component values as shown , this nominal time is 105μs . This pin is connected to the most negative supply potential ( usually ground ). This pin is connected to an external voltage which determines the low-supply alarm threshold. The trip voltage is obtained through a resistor divider connected between the VDD and LED pins. The low-supply alarm threshold voltage ( in volts ) ≒ ( 5R15/R14 ) + 5 where R6 and R7are in the same units. This pin has an internal pull-down device and is used to manually invoke a test mode. The Push-to-Test Mode is initiated by a high logic level on this pin ( usually the depression of a normally open push-button switch to VDD ). After one oscillator cycle, IRED pulse every 336 ms ( nominal ) and amplifier gain is increased by internal selection of C1. Background reflections in the smoke chamber can be used to simulate a smoke condition. After the third IRED pulse , a successful test ( three consecutive simulated smoke conditions ) activates the horn drivers and the I/O pin. When the push-button is released , the input returns to VSS due to the internal pull down. After one oscillator cycle , the amplifier gain returns to normal and after three additional IRED pulse ( less than one second ) , the device exits this mode and returns to standby. 13 14 15 OSCR VSS TRIP 16 TEST 3/10 2006-01-25 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. SMOKE DETECTOR PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT LOCAL ALARM TIMING DIAGRAM ( NOT TO SCALE )： M75010 tw(ired) 90% tf(ired) 10% 10% tired3 IRED (PIN 6) STROBE (PIN 4) tw(led) LED (PIN 11) tled1 tst3 tw(st) tired6 tired4 tst4 tst6 tled6 (NO PULSES) I/O (PIN 7) (AS OUTPUT) (AS INPUT) (AS OUTPUT) ton(horn) HORN ENABLE toff(horn) tr(io) ton (horn) toff(horn) NO SMOKE LOCAL SMOKE (REMOTE SMOKE = DON’T CARE) 3 STROBE WITHOUT 3 STROBE WITH SMOKE REMOTE SMOKE ( NO LOCAL SMOKE ) TEST 4/10 2006-01-25 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. SMOKE DETECTOR PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT STANDBY TIMING DIAGRAM ( NOT TO SCALE )： M75010 OSCC (PIN 12) INTERNAL CLOCK tOSC tired IRED (PIN 6) STROBE (PIN4) LED (PIN 11) tW(ired) tw(st) tst tled tW(led) SAMPLE SMOKE WARNING CHIRP thorn HORN ENABLE NO LOW SUPPLY CHAMBER SENSITIVITY NORMAL tw(horn) LOW SUPPLY OR DEGRADED SENSITIVITY WARNNING CHIRPS ARE OFFSET 5/10 2006-01-25 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. SMOKE DETECTOR PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT FUNCTIONAL BLOCK DIAGRAM M75010 I/O 7 BAND-GAP 5 REFERENCE VDD 10 9 HORN 2 FEEDBACK VDD + - 8 HORN 1 LOGIC 11 LOW BATTERY +V PHOTO AMP DETECT 3 LED + - C1 1 POWER-ON RESET +V OSCR C2 STROBE 2 OSCILLATOR 4 VDD & TIMING 13 12 OSCC. IRED 6 VSS 14 15 TRIP 16 TEST 6/10 2006-01-25 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. SMOKE DETECTOR PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT DC ELECTRICAL CHARACTERISTICS Characteristics Supply Voltage Operating Supply Current Sym. VDD IDD 7 10 16 15 7 10 16 15 12 15 12 15 16 16 7 7 11 8, 9 13 8, 9 4 Pin VDD — 12 12 12 9 9 9 9 9 9 9 9 12 12 12 12 12 9 9 12 6.5 6.5 6.5 6.5 12 9 — 12 9 — 9 12 12 — — — Min. 6.0 — — — — — — — 3.2 6.3 8.5 1.6 — — — — — 0.25 20 — — — — 5.5 VDD-0.1 VDD-5.6 — — 2.25 — -4.0 — — 6.5 VDD-4 VDD-3.92 Typ. — — — — — — — — — — — — — — — — — — — — — — 0.5 — — — -60 — 3.0 -35 — — — 7.2 — — Max. 12 12 2.0 3.0 1.5 2.7 7.0 0.5 — — — — 100 100 -100 -100 -1.0 10 80 140 0.6 1.0 — — — VDD-4.4 — 0.1 3.75 — — 1.0 -1.0 7.8 VDD-2 VDD-3.08 Unit V μA mA mA V V V V V V V V nA nA nA nA μA μA μA μA V V V V V V dB V V dB mA μA μA V V V M75010 (TA=-25℃ ~ 75℃) Conditions Average Standby During Strobe ON , IRED OFF During Strobe ON , IRED ON Low-Level Input Voltage VIL High-Level Input Voltage VIH Input Leakage High IIH VIN=VDD , Strobe Active ,Pin12 @VDD VIN=VDD VIN=VST , Strobe Active ,Pin12 @VDD VIN=VSS VIN=VDD ( @ VDD =9V) No Local Smoke ,VIN= VDD ( @VDD=9V) No Local Smoke ,VIN=17V( @VDD=12V) IO = 10mA IO = 16mA IO = 5mA IO = -16mA Inactive , IO = -1μA Active , IO = 100μA to 500μA Active , VDD= 6V to 12V Inactive , IO =1Μa , TA = +25℃ Active , IO = -6mA , TA = +25℃ Active , VDD= 6V to 12V VDD= Alarm , I/O active , VO= VDD-2V VO= VDD VO= VSS Any Alarm Condition Any Alarm Condition Input Leakage Low IIL Input Pull-Down Current IIN Low-Level Output Voltage VOL High-Level Output Voltage VOH VST Strobe Output Voltage Line Regulation IRED Output Voltage ΔVST(ΔVDD) VIRED 6 ΔVIRED(ΔVDD) Line Regulation High-Level Output Voltage IOH 7 OFF Leakage Current High IOZ 11 OFF Leakage Current Low IOZ 11 Low VDD Alarm Threshold VDD ( th ) 1, 2, 3 Common Mode Voltage VIC Smoke Comparator Ref. Volt. VREF Int. * Limits over the operating temperature range are based on characterization data. Characteristics are production tested at +25℃. Typical values are at +25℃and are given for circuit design information only. 7/10 2006-01-25 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. SMOKE DETECTOR PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT AC ELECTRICAL CHARACTERISTICS Characteristics Oscillator Period Led Pulse Period Led Pulse Width Sym. TOSC TLED1 TLED2 TLED3 TW (LED) TST1 TST2 TST3 TST4 TST5 TST6 TW (ST) TIRED1 TIRED2 TIRED3 TIRED4 TIRED5 TIRED6 TW (IRED) Tr(IRED) Tf (IRED) Td (IO) Tr (IO) 9 9 9 9 9 9 9 VDD 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 Min. 9.4 39 None 0.45 9.5 9.6 1.8 0.8 7.2 38.9 300 9.5 9.6 1.8 0.8 7.2 38.9 300 94 — — — 0.9 — 38.9 9.5 — — Typ. 10.5 — — 0.50 — — 2.0 1.0 8.0 — 336 — — 2.0 1.0 8.0 — 336 — — — 0 1.0 — — — 216 80 Max. 11.5 48 — 0.55 11.5 11.9 2.2 1.1 8.9 47.1 370 11.5 11.9 2.2 1.1 8.9 47.1 370 116 30 200 — 1.1 1.34 47.1 11.5 280 83 Unit ms s s s ms s s s s s ms ms s s s s s ms μs μs μs s s s s ms ms ms M75010 (TA=-25℃ ~ 75℃) Conditions No Local or Remote Smoke Remote Smoke only Local Smoke or Test No Local or Remote Smoke After 1 or 3 Valid Samples After 2 or 3 Valid Samples and During Local Alarm Remote Alarm Chamber Test or Low Supply Test , No Local Alarm Pushbutton Test , No Alarm No Local or Remote Smoke After 1 or 3 Valid Samples After 2 or 3 Valid Samples and During Local Alarm Remote Alarm Chamber Test , No Local Alarm Pushbutton Test , No Alarm 10% to 90% 90% to 10% Local Alarm End of Local Alarm or Test No Local Alarm Low Supply and Degraded Chamber Sensitivity Low Supply and Degraded Chamber Sensitivity Local or Remote Alarm Local or Remote Alarm Strobe Pulse Period Strobe Pulse Width IRED Pulse Period IRED Pulse Width IRED Rise Time IRED Fall Time I/O to Active Delay Rising Edge on I/O to Alarm I/O Charge Dump Duration Tdump Horn Warning Pulse Period THORN Horn Warning Pulse Width TW (HORN) Horn ON Time Horn OFF Time TON (HORN) TOFF (HORN) * Limits over the operating temperature range are based on characterization data. Characteristics are production tested at +25℃. Typical values are at +25℃and are given for circuit design information only. 8/10 2006-01-25 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. SMOKE DETECTOR PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT ELECTRICAL CHARACTERISTICS ( 一 ) STAND-ALONE： M75010 VDD C4 D1 PUSH TO TEST 9V R2 R1 C1 C1 C2 R5 C2 M75010P TEST 1 16 TRIP VSS OSCR R10 STROBE OSCC VDD LED C5 R14 R3 DETECT R6 R9 R15 R8 R4 C3 R7 IRED FEEDBACK I/O 8 HORN1 9 C6 HORN2 R11 R12 TO/FROM OTHER UNITS R13 C1 C2 C3 C4 C5 C6 0.047μF 4700pF 100μF 22μF 1500pF 1000pF R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15 5.6KΩ 5KΩ 8.2KΩ 1KΩ 560Ω 200KΩ 4.7Ω~22Ω 330Ω 7.5MΩ 100KΩ 200KΩ 2MΩ 220Ω 100KΩ 47KΩ 1. Value for R11、R12 and C6 may differ depending on type of piezoelectric horn used. 2. C2 and R7 are used for coarse sensitivity adjustment. Typical values are shown. 3. C4 should be 22μF if B1 is a carbon battery. C4 could be reduced to 1μF when an alkaline battery is used. 9/10 2006-01-25 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. SMOKE DETECTOR PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT ( 二 ) NETWORK： M75010 VDD C4 D1 9V R2 R1 C1 C1 C2 R5 C2 M75010P TEST 1 16 TRIP VSS R9 C5 STROBE VDD OSCR OSCC LED IRED R8 R3 DETECT R6 R4 C3 FEEDBACK I/O R7 HORN1 8 9 HORN2 TO/FROM OTHER UNITS R10 C1 C2 C3 C4 C5 0.047μF 4700pF 100μF 22μF 1500pF R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 5.6KΩ 5KΩ 8.2KΩ 1KΩ 560Ω 200KΩ 4.7Ω~22Ω 7.5MΩ 100KΩ 220Ω 1. C2 and R7 are used for coarse sensitivity adjustment. Typical values are shown. 2. C4 should be 22μF if B1 is a carbon battery. C4 could be reduced to 1μF when an alkaline battery is used. 3. FEEDBACK ( PIN10)、TRIP ( PIN15 ) and TEST ( PIN16 ) must connect to ground. * All specs and applications shown above subject to change without prior notice. (以上電路及規格僅供參考,本公司得逕行修正) 10/10 2006-01-25