MMSD16128808S-V-IB

MEMORY MODULE SDRam 128Mx16-SOP Synchronous Dynamic Ram MODULE MMSD16128808S-V 2Gbit SDRam organized as 128Mx16, based on 32Mx8 Pin Assignment (Top View) SOP 58 - (Pitch : 0.80 mm) Features - Stack of eight 256Mbit SDRam. - Organized as 128Mx16-bit. - Single +3.3V ±0.3V power supply. - Fully synchronous ; all signals registered on positive edge of system clock. - Internal pipelined operation ; column adress can be changed every clock cycle. - Programmable burst lengths ; 1, 2, 4, 8 or full page. - Auto Precharge, includes Concurrent Auto Precharge, and Auto Refresh Modes. - Self Refresh Modes. - LVTTL-compatible inputs and outputs. - Available Temperature Range : 0°C to +70°C -40°C to +85°C - Available with screening option for high reliability application (Space, etc...). Bank 0, #CS0 Bank 1, #CS1 Bank 2, #CS2 Bank 3, #CS3 1 CLK0, CKE0 3 5 7 CLK1, CKE1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 VDD DQ0 VDDQ DQ8 DQ1 VSSQ DQ9 DQ2 VDDQ DQ10 DQ3 VSSQ DQ11 VDD #CS1 #WE #CAS #RAS #CS0 BA0 21 BA1 41 CKE0 22 A10/AP 42 CLK0 23 A0 43 DQM0 A1 24 44 DQM1 25 45 VSS A2 26 A3 46 DQ15 27 VDD 47 VDDQ 28 #CS2 48 DQ4 29 #CS3 49 DQ14 30 CLK1 50 VSSQ 31 CKE1 51 DQ5 32 VSS 52 DQ13 33 A4 53 VDDQ A5 54 DQ6 34 35 A6 55 DQ12 A7 56 VSSQ 36 A8 37 57 DQ7 A9 38 58 VSS A11 39 A12 40 FUNCTIONAL BLOCK DIAGRAM General description The MMSD16128808S-V is a high-speed highly integrated Synchronous Dynamic Random Access Memory containing 2,147,483,648 bits. It is organized with four banks of 512 Mbit. Each bank has a 16-bit interface and is selected with specific #CS CLK and CKE. It is particularly well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or workstation. The MMSD16128808S-V is packaged in a 58 pin SOP. DQM0 DQ0-DQ7 2 DQM1 DQ8-DQ15 4 6 8 CLK0, CKE0 CLK1, CKE1 (All others signals are common to the eight memories) SDRam Memory Module ULYSSE (3DSD2048-163) 3D PLUS S.A. reserves the right to change or cancel products or specifications without notice 3DFP-0014-REV : 4 - SEPT. 2003 MEMORY MODULE SDRam 128Mx16-SOP Synchronous Dynamic Ram MODULE Mechanical Drawing MMSD16128808S-V 2Gbit SDRam organized as 128Mx16, based on 32Mx8 Min Max A A A2 D 11.55 10.30 25.40 13.40 10.85 0.30 12.15 10.90 25.80 13.80 11.05 A2 D E E1 E E1 b e e b 0.80 Dimensions (mm) Max. weight : 6.95 gr. Test Tools MMSD16128808S-V ENPLAS 64-08-04 Modified by 3D PLUS DC Operating conditions and characteristics Parameter Supply voltage Input logic high voltage Input logic low voltage Output logic high Voltage Output logic low voltage Symbol VDD VIH VIL VOH VOL Min 3.0 2.0 -0.3 2.4 Typ 3.3 3.0 Max 3.6 VDD+0.3 0.8 0.4 Unit V V V V V Absolute maximum ratings Parameter Voltage on any pin relative to VSS Storage temperature Power dissipation Short circuit current Symbol VIN, VOUT TSTG PD LOS Value -1.0 ~ 4.6 -55 ~ +150 2 50 Unit V °C W mA DC Characteristics Parameter Operating current (One bank active) Precharge standby current in power-down mode Symbol ICC1 ICC2P ICC2PS Value 202 24 16 Unit mA mA mA MMSD16128808S-V Temperature Range (0°C to + 70°C) (-40°C to + 85°C) -XX Part Number Marking MODULE MARKING 3D Plus LOGO C= I= Part Option Marking Pin 1 Indicator Data Code (WWYY) Serial Number Optional Quality Level N = Commercial Grade B= Industrial Grade S= Space Grade MMXX00000000XXX -XX 0000 0000 MAIN SALES OFFICE 3D PLUS 641, rue Hélène Boucher Z.I. 78532 BUC Cedex 3D PLUS USA, Inc 2570 Eldorado Parkway Suite 150 Mckinney, TX 75070 Web : www.3d-plus.com e-mail : sales@3d-plus.com DISTRIBUTOR FRANCE Tél : 33 (0)1 30 83 26 50 Fax : 33 (0)1 39 56 25 89 USA Tél : (214) 733-8505 Fax : (214) 733-8506 e-mail : sales@3d-plus.com ULYSSE (3DSD2048-163) 3D PLUS S.A. reserves the right to change or cancel products or specifications without notice 3DFP-0014-REV : 4 - SEPT. 2003