MPS4356

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR MPS4356 TO-92 Plastic Package E BC General Purpose Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air SYMBOL VCBO VCEO VEBO IC PD Tj, Tstg VALUE 80 80 5.0 800 625 5.0 - 55 to +150 UNITS V V V mA mW mW/ºC ºC Rth (j-c) Rth (j-a) 83.3 200 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage VCBO IC=10µA, IE=0 Collector Base Voltage Emitter Base Voltage Collector Cut Off Current Emitter Cut Off Current DC Current Gain VEBO ICBO IEBO *hFE IE=10µA, IC=0 VCB=50V, IE = 0 VCB=50V, IE=0, Ta=75ºC VEB=4V, IC = 0 VCE=10V, IC=100µA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=100mA VCE=10V, IC=500mA Collector Emitter Saturation Voltage Base Emitter Saturation Voltage *VCE (sat) *VBE (sat) IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA *Pulse test pulse width