MT5C6405

S RAM Austin Semiconductor, Inc. 16K x 4 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-86859 • MIL-STD-883 MT5C6405 PIN ASSIGNMENT (Top View) 24-Pin DIP (C) (300 MIL) A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ OE\ Vss 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Vcc A4 A3 A2 A1 A0 NC DQ4 DQ3 DQ2 DQ1 WE\ FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns • Battery Backup: 2V data retention • High-performance, low-power CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ • All inputs and outputs are TTL compatible 28-Pin LCC (EC) A5 NC NC Vcc NC 3 2 1 28 27 OPTIONS • Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access • Package(s) Ceramic DIP (300 mil) Ceramic LCC MARKING -12 -15 -20 -25 -35 -45* -55* -70* A6 4 A7 5 A8 6 A9 7 A10 8 A11 9 A12 10 A13 11 CE\ 12 26 25 24 23 22 21 20 19 18 NC A4 A3 A2 A1 A0 DQ4 DQ3 DQ2 13 14 15 16 17 DQ1 WE\ NC Vss OE\ C EC No. 106 No. 204 GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. • Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT • 2V data retention/low power L *Electrical characteristics identical to those provided for the 35ns access devices. For more products and information please visit our web site at www.austinsemiconductor.com MT5C6405 Rev. 2.0 5/01 1 S RAM Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM VCC GND MT5C6405 A A A A A A A A A D ROW DECODER I/O CONTROL Q 1,048,576-BIT MEMORY ARRAY CE\ (LSB) OE\ COLUMN DECODER (LSB) POWER DOWN WE\ A AAAAAAAAA TRUTH TABLE MODE STANDBY READ READ WRITE OE\ X L H X CE\ H L L L WE\ X H H L DQ HIGH-Z Q HIGH-Z D POWER STANDBY ACTIVE ACTIVE ACTIVE MT5C6405 Rev. 2.0 5/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 S RAM Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage on any Input or DQ Relative to Vss....-0.5V to +7.0V1 Storage Temperature…...................................-65oC to +150oC Power Dissipation.................................................................1W Max Junction Temperature..................................................+175°C Lead Temperature (soldering 10 seconds)........................+260oC Short Circuit Output Current...........................................20mA 1 All voltage referenced to Vss. MT5C6405 *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage CONDITIONS SYM VIH VIL MIN 2.2 -0.5 -10 -10 2.4 MAX UNITS NOTES Vcc+0.5V V 1 0.8 10 10 V µA µA V 0.4 MAX -20 110 1, 2 0V < VIN < VCC Outputs Disabled 0V < VOUT < VCC IOH = -4.0mA IOL = 8.0mA ILI ILO VOH VOL 1 1 V PARAMETER Power Supply Current: Operating Power Supply Current: Standby CONDITIONS CE\ < VIL; VCC = MAX Output Open CE\ > VIH; VCC = MAX f = 0 Hz CE\ > (VCC -0.2); VCC = MAX All Other Inputs < 0.2V or > (VCC - 0.2V), f = 0 Hz SYM Icc -12 140 -15 125 -25 100 -35 90 UNITS NOTES mA 3 ISBT1 50 45 40 35 30 mA ISBC2 25 25 25 25 25 mA CAPACITANCE DESCRIPTION Input Capacitance Output Capacitance CONDITIONS TA = 25 C, f = 1MHz Vcc = 5V o SYM CI CO MAX 8 10 UNITS pF pF NOTES 4 4 MT5C6405 Rev. 2.0 5/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 S RAM Austin Semiconductor, Inc. MT5C6405 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Chip Enable to power-up time Chip disable to power-down time Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z -12 -15 -20 -25 -35 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tPU tPD tAOE tLZOE tHZOE tWC tCW tAW tAS tAH tWP tDS tDH tLZWE tHZWE 12 12 12 2 2 7 0 12 6 0 6 12 10 10 0 0 10 7 0 2 0 15 12 12 0 0 12 8 0 2 0 0 7 20 15 15 0 0 15 10 0 2 0 0 15 7 0 8 25 20 20 0 0 20 12 0 2 0 2 2 8 0 20 8 0 10 35 25 25 0 0 25 15 0 2 0 15 15 15 2 2 10 0 25 10 8 15 20 20 20 2 2 12 0 35 15 25 25 25 2 2 15 35 35 35 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 7 6, 7 6 6 7 8 10 15 7 6, 7 MT5C6405 Rev. 2.0 5/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 S RAM Austin Semiconductor, Inc. +5V AC TEST CONDITIONS Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2 MT5C6405 +5V 480 480 Q 255 5 pF Q 255 30pF Fig. 1 Output Load Equivalent Fig. 2 Output Load Equivalent NOTES 1. 2. 3. All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) 4. This parameter is guaranteed but not tested. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. tHZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV typical from steady state voltage, allowing for actual tester RC time constant. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. CE2 timing is the same as CE1\ timing. The waveform is inverted. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION VCC for Retention Data CE\ > (VCC - 0.2V) Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time VIN > (VCC - 0.2V) or < 0.2V VCC = 2V ICCDR 1 mA CONDITIONS SYM VDR MIN 2 MAX --UNITS V NOTES tCDR tR 0 tRC --- ns ns 4 4, 11 LOW Vcc DATA RETENTION WAVEFORM VCC t CDR DATA RETENTION MODE 4.5V VDR > 2V 4.5V tR CE\ MT5C6405 Rev. 2.0 5/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 4321 4321 4321 4321 321 321 321 321 VIH VIL VDR 4326 321154321 87 4216 332154321 326 87 421154321 321154321 87 3326 487 987654321 987654321 4321 321 987654321 987654321 DON’T CARE UNDEFINED S RAM Austin Semiconductor, Inc. MT5C6405 READ CYCLE NO. 1 ttRC RC ADDRESS VALID 8, 9 ttAA AA t OH tOH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 7, 8, 10 ttRC RC CE\ ttAOE AOE tLZOE OE\ tLZOE HZOE tHZOE t ttLZCE LZCE tACE tACE DQ HIGH-Z tHZCE tHZCE DATA VALID t PU tPU Icc ttPD PD MT5C6405 Rev. 2.0 5/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 4321 4321 4321 4321 1 4321 4321 432 DON’T CARE UNDEFINED S RAM Austin Semiconductor, Inc. WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) WC tWC MT5C6405 t ADDRESS tAW tAW tAS tAS CE\ WE\ tCW tCW t WP tWP1 tDS tDS AH tAH t DQ D Q DATA VAILD Q HIGH-Z HIGH Z WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled) tWC tWC ADDRESS tAW tAW tCW tCW t AH tAH CE\ tAS tAS t WP tWP1 tDS t DH tDH WE\ DQ D Q Q DATA VALID HIGH-Z HIGH-Z 5 3 21 44321 4321 1 4321 432 NOTE: Output enable (OE\) is inactive (HIGH). MT5C6405 Rev. 2.0 5/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 321098765432109876543211 1 2 32109876543210987654321 1 32109876543210987654321 098765432121098765432109876543210987654321 098765432121098765432109876543210987654321 t DH tDH DON’T CARE 54321 54321 54321 2109876543210987654321 1 2109876543210987654321 1 987654321 987654321 987654321 116543210987654321 27 1 1 27 176543210987654321 21654321098765432 UNDEFINED S RAM Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #106 (Package Designator C) SMD 5962-86859, Case Outline L MT5C6405 D A Q E S1 b2 e b L eA c SYMBOL A b b2 c D E eA e L Q S1 SMD SPECIFICATIONS MIN MAX --0.200 0.014 0.026 0.045 0.065 0.008 0.018 --1.280 0.220 0.310 0.300 BSC 0.100 BSC 0.125 0.200 0.015 0.060 0.005 --- NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C6405 Rev. 2.0 5/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 S RAM Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #204 (Package Designator EC) SMD 5962-86859, Case Outline U D1 B2 D2 L2 MT5C6405 E3 e E E1 E2 h x 45o D hx45o D3 A1 A L B1 SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L2 SMD SPECIFICATIONS MIN MAX 0.060 0.075 0.050 0.065 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C6405 Rev. 2.0 5/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 S RAM Austin Semiconductor, Inc. MT5C6405 ORDERING INFORMATION EXAMPLE: MT5C6405C-25L/XT Package Speed Options** Process Type ns C C C C C C C C -12 -15 -20 -25 -35 -45 -55 -70 L L L L L L L L /* /* /* /* /* /* /* /* EXAMPLE: MT5C6405EC-15L/IT Package Speed Options** Process Type ns EC EC EC EC EC EC EC EC -12 -15 -20 -25 -35 -45 -55 -70 L L L L L L L L /* /* /* /* /* /* /* /* Device Number MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 Device Number MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 MT5C6405 *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing ** OPTIONS L = 2V Data Retention/Low Power -40oC to +85oC -55oC to +125oC -55oC to +125oC MT5C6405 Rev. 2.0 5/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 S RAM Austin Semiconductor, Inc. MT5C6405 ASI TO DSCC PART NUMBER CROSS REFERENCE* ASI Package Designator C ASI Part # MT5C6805C-35/883C MT5C6805C-35L/883C MT5C6805C-45/883C MT5C6805C-45L/883C MT5C6805C-55/883C MT5C6805C-55L/883C MT5C6805C-70/883C MT5C6805C-70L/883C SMD Part # 5962-8685918LA 5962-8685917LA 5962-8685916LA 5962-8685915LA 5962-8685914LA 5962-8685913LA 5962-8685912LA 5962-8685911LA ASI Package Designator EC ASI Part # MT5C6805EC-35/883C MT5C6805EC-35L/883C MT5C6805EC-45/883C MT5C6805EC-45L/883C MT5C6805EC-55/883C MT5C6805EC-55L/883C MT5C6805EC-70/883C MT5C6805EC-70L/883C SMD Part # 5962-8685918UA 5962-8685917UA 5962-8685916UA 5962-8685915UA 5962-8685914UA 5962-8685913UA 5962-8685912UA 5962-8685911UA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C6405 Rev. 2.0 5/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11