OMD100 OMD400 OMD200 OMD500
FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package
FEATURES
• • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS PER TRANSISTOR @ 25°C
PART NUMBER OMD100 OMD200 OMD400 OMD500 VDS 100V 200V 400V 500V RDS(on) .08 .11 .35 .43 ID 25A 25A 13A 11A
3.1
SCHEMATIC
CONNECTION DIAGRAM
FET 4 G S D
FET 3 GS D
1.520
.150 .500 MIN.
.260 1.000 SQ. 45° REF
.170 R. TYP. .156 DIA. TYP. .040 LEAD DIA.
D
S
G
G
S
D
.187 TYP.
.125 (10 PLCS) .625
.050 .270
FET 1
FET 3
4 11 R2 Supersedes 1 07 R1
3.1 - 1
3.1
OMD100 - OMD500
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD100 (100V)
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 35 1.1 0.1 0.2
(TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD200 (200V)
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 30 0.1 0.2
(TC = 25°C unless otherwise noted)
Min. Typ. Max. Units Test Conditions 100 2.0 4.0 100 - 100 0.25 1.0 V V nA nA mA mA A 1.60 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = +20 V VGS = -20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TC = 125 C
Min. Typ. Max. Units Test Conditions 200 2.0 4.0 100 -100 0.25 1.0 V V nA nA mA mA A 1.36 1.76 .085 .110 0.14 .200 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = + 20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A, TC = 125 C
.065 .080 .10 .160
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
9.0
10 2700 1300 470 28 45 100 50
S(W ) VDS 2 VDS(on), ID = 20 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 30 V, ID @ 20 A Rg = 5.0 W , VG = 10V
(MOSFET switching times are essentially independent of operating temperature.)
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
10.0 12.5 2400 600 250 25 60 85 38
S(W ) VDS 2 VDS(on), ID = 16 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 75 V, ID @ 16 A Rg = 5.0 W ,VGS = 10V
(MOSFET switching times are essentially independent of operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400 - 40 - 160 - 2.5 A A V ns
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350
- 30 - 120 -2
TC = 25 C, IS = -40 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms
VSD trr
ns
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(W ) A A V
(W )
3.1 - 2
DYNAMIC
DYNAMIC
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G
D
S
TC = 25 C, IS = -30 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD400 (400V)
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 15 2.0 0.30 .60 0.1 0.2
(TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD500 (500V)
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 13 2.1 0.1 0.2
(TC = 25°C unless otherwise noted)
Min. Typ. Max. Units Test Conditions 400 2.0 4.0 100 - 100 0.25 1.0 V V nA nA mA mA A 2.8 .35 .70 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = +20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 8.0 A VGS = 10 V, ID = 8.0 A VGS = 10 V, ID = 8.0 A, TC = 125 C
Min. Typ. Max. Units Test Conditions 500 2.0 4.0 100 - 100 0.25 1.0 V V nA nA mA mA A 3.0 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = +20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A, TC = 125 C
0.35 0.43 0.66 0.88
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
6.0
9.6 2900 450 150 30 40 80 30
S(W ) VDS 2 VDS(on), ID = 8.0 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 200 V, ID @ 8.0 A Rg =5.0 W , VGS =10V
(MOSFET switching times are essentially independent of operating temperature.)
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
6.0
7.2 2600 280 40 30 46 75 31
S(W ) VDS 2 VDS(on), ID = 7.0 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 210 V, ID @ 7.0 A Rg = 5.0 W , VGS = 10 V
(MOSFET switching times are essentially independent of operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 600 - 15 - 60 - 1.6 A A V ns
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700
- 13 - 52 - 1.4
TC = 25 C, IS = -15 A, VGS = 0 TJ = 100 C, IF = IS, dlF/ds = 100 A/ms
VSD trr
ns
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(W ) A A V
(W )
3.1 - 3
DYNAMIC
DYNAMIC
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G
D
S
OMD100 - OMD500
TC = 25 C, IS = -13 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms
3.1
OMD100 - OMD500 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter VDS VDGR ID @ TC = 25°C ID @ TC = 100°C IDM VGS PD @ TC = 25°C PD @ TC = 100°C Junction To Case Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Gate-Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
2 2
OMD100 100 100 ± 25 ± 16 ± 100 ± 20 125 50 1.0 .033
OMD200 200 200 ± 25 ± 16 ± 80 ± 20 125 50 1.0 .033
OMD400 400 400 ± 13 ±.8 ± 54 ± 20 125 50 1.0 .033
OMD500 500 500 ± 11 ±7 ± 40 ±20 125 50 1.0 .033
Units V V A A A V W W W/°C W/°C
Junction To Ambient Linear Derating Factor TJ Tstg Lead Temperature Operating and Storage Temperature Range (1/16" from case for 10 secs.)
-55 to 150 300
-55 to 150 -55 to 150 -55 to 150 300 300 300
°C °C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. 2 Package pin limitation = 10 Amps
THERMAL RESISTANCE
RthJC RthJA Junction-to-Case Junction-to-Ambient 1.0 30 °C/W °C/W Free Air Operation
POWER DERATING
3.1
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
