P06P03LVG

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor P06P03LVG SOP-8 Lead-Free D PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 45mΩ ID -6A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS LIMITS -30 ±20 -6 -5 -30 2.5 1.3 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C ID IDM PD Tj, Tstg A W Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 °C UNITS °C / W °C / W SYMBOL RθJc RθJA TYPICAL MAXIMUM 25 50 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -4.5V, ID =- 5A VGS = -10V, ID = -6A VDS = -10V, ID = -6A -30 60 37 16 75 45 -30 -0.9 -1.5 -3 V LIMITS UNIT MIN TYP MAX ±100 nA 1 10 µA A mΩ S JUN-10-2004 1 NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor P06P03LVG SOP-8 Lead-Free DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 Ciss Coss Crss Qg Qgs Qgd 2 530 VGS = 0V, VDS = -15V, f = 1MHz 135 70 10 VDS = 0.5V(BR)DSS, VGS = -10V, ID = -6A 2.2 2 5.7 VDS = -15V, RL = 1Ω ID ≅ -1A, VGS = -10V, RGS = 6Ω 10 18 5 nS 14 nC pF Gate-Source Charge2 Gate-Drain Charge 2 2 2 Turn-On Delay Time Rise Time td(on) tr td(off) tf Turn-Off Delay Time Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current Pulsed Current3 Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge 1 2 IS ISM VSD trr Qrr IF = -1A, VGS = 0V IF = -5A, dlF/dt = 100A / µS 15.5 7.9 -2.1 -4 -1.2 A V nS nC Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P06P03LVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name. JUN-10-2004 2 NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor P06P03LVG SOP-8 Lead-Free Typical Characteristics JUN-10-2004 3 NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor P06P03LVG SOP-8 Lead-Free JUN-10-2004 4 NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor P06P03LVG SOP-8 Lead-Free SOIC-8 (D) MECHANICAL DATA mm Min. 4.8 3.8 5.8 0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.35 0.1 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 mm Min. 0.5 0.18 Typ. 0.715 0.254 0.22 0° 4° 8° Max. 0.83 0.25 Dimension A B C D E F G Dimension H I J K L M N JUN-10-2004 5