P6503NJ

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 65mΩ 150mΩ ID 4A -3A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) 1 1 SYMBOL VDS VGS N-Channel P-Channel 30 ±20 4 3 10 2 1.3 -55 to 150 275 -30 ±20 -3 -2 -10 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 110 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 1 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -30 0.9 -0.9 1.5 -1.5 2.5 -2.5 ±100 ±100 1 -1 µA 10 -10 V MIN TYP MAX UNIT nA VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch On-State Drain Current 1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 3A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 -10 72 170 48 100 6 3 120 250 A Drain-Source On-State Resistance 1 VGS = -4.5V, ID = -2A RDS(ON) VGS = 10V, ID = 4A VGS = -10V, ID = -3A mΩ 65 150 Forward Transconductance 1 gfs VDS = 10V, ID = 3A VDS = -10V, ID = -2A DYNAMIC S Total Gate Charge 2 Qg 2 N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 3A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -2A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5 5.5 0.8 1.2 1.0 0.9 7.5 6.6 Gate-Source Charge 2 Qgs nC Gate-Drain Charge Qgd 2 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 Turn-On Delay Time 2 2 td(on) N-Channel VDS = 15V, RL = 15Ω N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 7 8 12 11 12 14 7 8 11 12 18 18 18 21 11 12 nS Rise Time tr 2 ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Channel VDS = -15V, RL = 15Ω Turn-Off Delay Time td(off) Fall Time 2 tf N-Ch ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Forward Voltage 1 IF = 0.9A, VGS = 0V VSD IF = -0.9A, VGS = 0V trr IF = 0.9A, dlF/dt = 100A / µS IF = -0.9A, dlF/dt = 100A / µS N-Ch P-Ch N-Ch P-Ch 40 40 1.2 -1.2 80 80 V Reverse Recovery Time nS Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THIS PRODUCT MARKED WITH “50YWW” 50YWW Marking Description: 5 - N+P MOSFET 0 - Serial Number Y - Year W - Week 3 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 N-CHANNEL 4 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 5 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 P-CHANNEL 6 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 7 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 TSOPJW-8 MECHANICAL DATA mm Dimension Min. A B C D E F G 0.925 0.01 2.95 2.30 2.65 0.25 Typ. 3.05 2.40 2.85 0.32 0.65BSC 1.00 0.1 Max. 3.10 2.50 3.05 0.40 H I J K L M N 0.1 7° NOM 0.04 REF. 0.15 0.20 Dimension Min. 0.30 Typ. 0.45 Max. 0.60 Mm J K F L G D E I H M B C A 8 JUL-08-2004