PJ2N3904CX

PJ2N3904 NPN Epitaxial Silicon Transistor G ENERAL PURPO SE TRANSISTO R • TO-92 SOT-23 • C ollector-Emitter Voltage: VCEO = 40V C ollector Dissipation: P C (max) = 625 mW ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃) Rating C ollector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj T stg Rating 60 40 6 200 625 150 -55~150 Unit V V V mA mW ℃ ℃ P in : 1. Emitter 2. Base 3 . Co ll ector P in : 1. Base 2. Emitter 3. Collecto r ORDERING INFORMATION Device P J2N3904CT P J2N3904CX Operating Temperature -20℃～+85℃ Package TO-92 S OT-23 ELECTRICAL CHARACTERISTICS (T a = 25℃) C haracte ristic C ollector-Base Breakdown Voltage *Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Curent Base Cut-off Current *DC Current Gain Symbol BVCBO B VCEO B VEBO ICEX IBL hFE Te st Conditions IC= 10μA , IE =0 IC= 1mA , IB=0 IE =10μA , IC=0 VCE = 30V , VBE = 3V VCE = 30V , VBE = 3V Ic =0.1mA, VCE = 1V Ic =1mA, VCE = 1V Ic=10mA; VCE = 1V Ic =50 mA, VCE = 1V Ic =100 mA, VCE = 1V IC= 10 mA , IB=1mA IC= 50mA , IB=5mA IC= 10 mA , IB=1mA IC= 50mA , IB=5mA VCB = 5V, IE = 0 f=1MHz Ic =10 mA, VCE = 20V f=100MHz Vcc =3 V, VBE = 0.5V Ic =10 mA, IB1 = 1mA Vcc =3V, Ic =1mA IB1=IB2=1 mA Min 60 40 6 Typ Max Unit V V V nA nA 50 50 40 70 100 60 30 0.65 300 0.2 0.3 0.85 0.95 4 *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Produce Turn On Time Turn Off Time VCE(sat) VBE(sat) C ob fT ton toff V V V V pF MHz 300 70 250 ns ns *Pulse Test: Pulse Width ≤ 300μs.Duty Cycle ≤ 2% 1-3 2002/01.rev.A PJ2N3904 NPN Epitaxial Silicon Transistor DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE OUTPUT CAPACITANCE 2-3 2002/01.rev.A PJ2N3904 NPN Epitaxial Silicon Transistor 3-3 2002/01.rev.A