PJ2N9012CX

PJ2N9012 PNP Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION TO-92 SOT-23 • • • • High total power dissipation(PT=625mW) High collector Current (Ic=-500mA) C omplementary to 2N9013 Excellent hEF Linearity ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ℃ ) Rating C ollector Base Voltage C ollector Emitter Voltage Emitter Base Voltage C ollector Current C ollector Dissipation Junction Temperature S torage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Value -40 -20 -5 -500 625 150 -55 ~150 Uint V V V A W 0 0 P in : 1.Emitter 2.Base 3.Collector P in : 1. Base 2. Emitter 3. Collector ORDERING INFORMATION C C Device P J2N9012CT P J2N9012CX Operating Temperature -20℃～+85℃ Package TO-92 S OT-23 E LECTRICAL CHARACTERISTICS (Ta= 25 0C) C haracte ristic C ollector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Symbol BVCBO B VCEO B VEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE(ON) Te st Conditions IC= -100μA , IE =0 IC= -1mA , IB=0 IE =-100μA , IC=0 VCB= -25V , IE = 0 VEB= -3V , IC=0 VEB= -1V, IC = -50mA VEB= -1V, IC = -500mA IC= -500 mA , IB=-50mA IC= -500mA , IB=-50mA VCE = -1V, Ic =-10mA Min -40 -20 -5 Typ Max Unit V V V -100 -100 64 40 0.58 120 90 0.14 0.84 0.63 0.3 1.0 0.7 202 nA nA V V V hEF CLASSIFICATION Classification hEF D 64-91 E 78-112 F 96-135 G 112-166 H 144-202 1-3 2002/01.rev.A PJ2N9012 PNP Epitaxial Silicon Transistor S TATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT 2-3 2002/01.rev.A PJ2N9012 PNP Epitaxial Silicon Transistor 3-3 2002/01.rev.A