PJ2N9013 NPN Epitaxial Silicon Transistor
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLAS S B PUS H-PULL OPERATION
• • • • High total power dissipation(PT=625mW) High collector Current (Ic=500mA) C omplementary to PJ2N9012 Excellent hEF Linearity
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 °C)
Rating C ollector Base Voltage C ollector Emitter Voltage Emitter Base Voltage C ollector Current C ollector Dissipation Junction Temperature S torage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Value 40 20 5 500 625 150 -55 ~150 Uint V V V A W °C °C
P in : 1. Emitter 2. Base 3. Collector P in : 1. Base 2. Emitter 3. Collector
ORDERING INFORMATION
Device P J2N9013CT P J2N9013CX Operating Temperature -20℃~+85℃ Package TO-92 S OT-23
E LECTRICAL CHARACTERISTICS (Ta= 25 °C)
C haracte ristic
C ollector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage
Symbol
BVCBO B VCEO B VEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE(ON)
Te st Conditions
IC= 100µA , IE =0 IC= 1mA , IB=0 IE =100µA , IC=0 VCB= 25V , IE = 0 VEB= 3V , IC=0 VEB= 1V, IC = 50mA VEB= 1V, IC = 500mA IC= 500 mA , IB=50mA IC= 500mA , IB=50mA VCE = 1V, Ic =10mA
Min
40 20 5
Typ
Max
Unit
V V V
100 100 64 40 120 90 0.16 0.91 0.6 0.67 0.6 1.2 0.7 202
nA nA
V V V
hEF CLASSIFICATION
Classification hEF
D 64-91
E 78-112
F 96-135
G 112-166
H 144-202
1-3
2002/01.rev.A
PJ2N9013 NPN Epitaxial Silicon Transistor
S TATIC CHARACTERISTIC DC CURRENT GAIN
BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE
CURRENT GAIN-BANDWIDTH PRODUCT
2-3
2002/01.rev.A
PJ2N9013 NPN Epitaxial Silicon Transistor
3-3
2002/01.rev.A
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