PJ2N9013CX

PJ2N9013 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLAS S B PUS H-PULL OPERATION • • • • High total power dissipation(PT=625mW) High collector Current (Ic=500mA) C omplementary to PJ2N9012 Excellent hEF Linearity TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS ( Ta= 25 °C) Rating C ollector Base Voltage C ollector Emitter Voltage Emitter Base Voltage C ollector Current C ollector Dissipation Junction Temperature S torage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Value 40 20 5 500 625 150 -55 ~150 Uint V V V A W °C °C P in : 1. Emitter 2. Base 3. Collector P in : 1. Base 2. Emitter 3. Collector ORDERING INFORMATION Device P J2N9013CT P J2N9013CX Operating Temperature -20℃～+85℃ Package TO-92 S OT-23 E LECTRICAL CHARACTERISTICS (Ta= 25 °C) C haracte ristic C ollector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Symbol BVCBO B VCEO B VEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE(ON) Te st Conditions IC= 100µA , IE =0 IC= 1mA , IB=0 IE =100µA , IC=0 VCB= 25V , IE = 0 VEB= 3V , IC=0 VEB= 1V, IC = 50mA VEB= 1V, IC = 500mA IC= 500 mA , IB=50mA IC= 500mA , IB=50mA VCE = 1V, Ic =10mA Min 40 20 5 Typ Max Unit V V V 100 100 64 40 120 90 0.16 0.91 0.6 0.67 0.6 1.2 0.7 202 nA nA V V V hEF CLASSIFICATION Classification hEF D 64-91 E 78-112 F 96-135 G 112-166 H 144-202 1-3 2002/01.rev.A PJ2N9013 NPN Epitaxial Silicon Transistor S TATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT 2-3 2002/01.rev.A PJ2N9013 NPN Epitaxial Silicon Transistor 3-3 2002/01.rev.A