PJ2N9014

PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • • High total power dissipation (PT=450mW) High hFE and good linearity C omplementary to PJ2N9015 TO-92 SOT-23 • ABSOLUTE MAXIMUM RATINGS ( T a= 25 °C ) Rating C ollector Base Voltage C ollector Emitter Voltage Emitter Base Voltage C ollector Current C ollector Dissipation Junction Temperature S torage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Value 50 45 5 100 450 150 -55 ~150 Uint V V V mA mW °C °C P in : 1. Emitter 2. Base 3. Collector P in : 1. Base 2.Emitter 3.Collector ORDERING INFORMATION Device P J2N9014CT P J2N9014CX Operating Temperature -20℃～+85℃ Package TO-92 S OT-23 E LECTRICAL CHARACTERISTICS ( T a= 25 °C ) C haracte ristic C ollector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Produce Noise Figure Symbol BVCBO B VCEO B VEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(ON) C ob fT NF Te st Conditions IC= 100μA , IE =0 IC= 1mA , IB=0 IE =100μA , IC=0 VCB= 50V , IE = 0 VEB= 5V , IC=0 VEB= 5V, IC = 1 mA IC= 100 mA , IB=5mA IC= 100mA , IB=5mA VCE = 5V, Ic =2 mA VCB = 10V, IE =0 f=1MHz VCE = 5V, Ic =10 mA VCE = 5V, Ic =0.2 mA f=1KHz,Rs=2KΩ Min 50 45 5 Typ Max Unit V V V 50 50 60 280 0.14 0.84 0.58 0.63 2.2 150 270 0.9 10 1000 0.3 1.0 0.7 3.5 nA nA V V V pF MHz dB hEF CLASSIFICATION Classification HFE A 60-150 B 100-300 C 200-600 D 400-1000 1-3 2002/01.rev.A PJ2N9014 NPN Epitaxial Silicon Transistor S TATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT 2-3 2002/01.rev.A PJ2N9014 NPN Epitaxial Silicon Transistor 3-3 2002/01.rev.A