PJ2N9015CT

PJ2N9015 PNP Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • • • High total power dissipation (PT=450mW) High hFE and good linearity C omplementary to PJ2N9014 TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS ( T a= 25 °C ) Characteristic C ollector Base Voltage C ollector Emitter Voltage Emitter Base Voltage C ollector Current C ollector Dissipation Junction Temperature S torage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating -50 -45 -5 -100 450 150 -55 ~150 Uint V V V mA mW °C °C Device P J2N9015CT P J2N9015CX Operating Temperature -20℃～+85℃ Package TO-92 S OT-23 P in : 1. Emitter 2. Base 3 . Co ll ector P in : 1.Base 2.Emitter 3. Collector ORDERING INFORMATION E LECTRICAL CHARACTERISTICS ( T a= 25 °C ) C haracte ristic C ollector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Produce Noise Figure Symbol BVCBO B VCEO B VEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(ON) C ob fT NF Te st Conditions IC= -100μA , IE =0 IC= -1mA , IB=0 IE = -100μA , IC=0 VCB= -50V , IE = 0 VEB= -5V , IC=0 VEB= -5V, IC = -1 mA IC= -100 mA, IB= -5mA IC= -100mA , IB= -5mA VCE = -5V, Ic = -2 mA VCB = -10V, IE = 0 f=1MHz VCE = -5V, Ic = -10 mA VCE = -5V, Ic = -0.2 mA f=1KHz, Rs=2KΩ Min -50 -45 -5 Typ Max Unit V V V nA nA V V V pF MHz dB 60 -0.6 200 -0.2 -0.82 -0.65 4.5 190 0.7 -50 -50 600 -0.7 -1.0 -0.75 7.0 100 10 hEF CLASSIFICATION Classification HFE A 60-150 B 100-300 C 200-600 D 400-1000 1-3 2002/01.rev.A PJ2N9015 PNP Epitaxial Silicon Transistor S TATIC CHARACTERISTIC BASE-EMITTER VOLTAGE DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE 2-3 2002/01.rev.A PJ2N9015 PNP Epitaxial Silicon Transistor 3-3 2002/01.rev.A