PJA733CX

PJA733 PNP Epitaxial Silicon Transistor AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OS C. • C omplement to PJC945 TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Characteristic C ollector-Base Voltage C ollector-Emitter Voltage Emitter-Base Voltage C ollector Current C ollector Dissipation Junction Temperature S torage Temperature Symbol VCBO VCEO VEBO Ic PC Tj Tstg Rating -50 -45 -5 -100 450 150 -55 ~150 Unit V V V mA mW °C °C Device P JA733CT P JA733CX Operating Temperature -20℃～+85℃ Package TO-92 S OT-23 P in : 1. Base 2. Emitter 3 .Co ll ecto r P in : 1. Emitter 2. Colletor 3. Base ORDERING INFORMATION ELECTRICAL CHARACTERISTICS (Ta = 25 °C) Characteristic C ollector-Base Breakdown Voltage C ollector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage C ollector Cutoff Current Emitter Cutoff Current Collector-Cutoff Current DC Current Gain C ollector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage C urrent-Gain-Bandwidth Product Output Capacitance Noise Figure Symbol BVCBO BVCEO BVEBO ICBO IEBO ICEO hFE VCE (SAT) VBE (SAT) VBE (on) fT C Ob NF Test Condition Ic = -100µA, IE = 0 Ic =-1.0mA, IB = 0 IE = _100µA, IC = 0 VCB= 45V,IE =0 VEB=3V,IC=0 VCE =40V,IB=0 VCE =6V,Ic =1.0 mA IC=-100mA,IB=-5mA IC=-100mA,IB=-5mA IC=-2mA,VCE =-5V VCE =-5V,IC=-10mA f=1MHZ VCB=-10V,IE =0 VCE =-5V,IC= _0.2mA f=1KHZ ,Rs=1KΩ Min -50 -40 -5 Typ Max Unit V V V nA nA -50 -50 70 200 -0.2 -0.82 -0.65 190 4.5 0.7 700 -0.7 -1.0 -0.75 7.0 10 -0.6 100 V V V MHz pF dB h FE (2) CLASSIFICATION R 70-140 Q 120-240 P 200-400 K 350-700 Classification hFE 1-3 2002/01.rev.A PJA733 PNP Epitaxial Silicon Transistor S TATIC CHARACTERISTIC BASE-EMITTER VOLTAGE DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE 2-3 2002/01.rev.A PJA733 PNP Epitaxial Silicon Transistor 3-3 2002/01.rev.A