RJN1163

N-Channel Junction FET RJN1163 Electret Capacitor Microphone Applications Features Specially suited for use in audio and telephone electret capacitor microphones Excellent voltage gain Very low noise High ESD voltage Ultra-small size package Package Type : SOT-300 [unit:mm] 1.60±0.05 0.31±0.03 0.12±0.03 3 1.40±0.01 0.80±0.05 0~0.02 Applications Cellular phones Portable audio PDAs MP3 players 1 0.21±0.03 0.5±0.05 2 0.21±0.03 0.5±0.05 MAX 0.34 [TOP VIEW] [SIDE VIEW] 1. Drain 2. Source 3. Gate Absolute Maximum Ratings at Ta = 25 oC Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Ratings -20 10 10 100 150 -55 to +150 Unit V mA mA mW o o C C Electrical Characteristics at Ta = 25 o C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS |yfs| Ciss Crss Conditions IG = -100µA VDS = 5V, ID = 1µA VDS = 5V, VGS = 0 VDS = 5V, VGS = 0, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDS = 5V, VGS = 0, f = 1MHz Min -20 -0.2 70* 0.4 Ratings Typ Max -0.6 1.2 3.5 0.8 -1.5 430* Unit V V µA mS pF pF * The RJN1163 is classified by IDSS as follows Classification A1 IDSS(µA) 70~120 A2 100~170 B 150~270 C 210~350 D 320~430 RFsemi Technologies, Inc. Rev. 4 RJN1163 Electrical Characteristics Parameter o Symbol Conditions Min Typ -3.0 -1.2 Max Unit dB dB dB MΩ Ω % dB [Ta = 25 C , VCC = 4.5V, RL = 1kΩ, CIN = 15pF, See Specified Test Circuit.] Voltage Gain GV VIN = 10 mV, f = 1kHz > VIN = 10 mV, VCC = 4.5 - 1.5V Reduced Voltage Characteristics ∆GVV f = 1kHz to 110Hz Frequency Characteristics ∆GVf Input Impedance ZIN f = 1kHz Output Impedance ZO f = 1kHz Total Harmonic Distortion THD VIN = 10mV, f = 1kHz Output Noise Voltage VNO VIN = 0, A curve -3.5 -1.0 700 30 1.0 -110 Test Circuit Voltage Gain Frequency Characteristics Distortion Reduced Voltage Characteristics 1kΩ 15pF 33µF Vcc = 4.5V Vcc = 1.5V OSC B V THD A 1kΩ VTVM Output Impedance 500 ID - VDS Drain Current, ID - µA 500 ID - VDS Drain Current, ID - µA 400 400 300 VGS = 0V -0.1V -0.2V VGS = 0V 300 200 200 -0.1V -0.2V 100 -0.5V 0 0 1 2 3 -0.3V -0.4V 4 5 100 -0.5V 0 0 2 4 6 8 -0.3V -0.4V 10 Drain - to - Source Voltage, VDS - V Drain - to - Source Voltage, VDS - V RFsemi Technologies, Inc. Rev. 4 RJN1163 VDS = 5V 1,000 Forward Transfer Admittance, l yfs l - mS ID - VGS 800 5 l yfs l - IDSS VDS = 5V VGS = 0V f = 1kHz 3 2 600 Drain Current, ID - µA IDS S = A 0µ 65 4 µA 20 2 µA 00 1 0.7 0.5 400 200 0.3 0.2 50 70 100 200 300 500 700 1000 2000 0 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 Gate - to - Source Voltage, VGS - V Drain Current, IDSS - µA 2 VGS(off) - IDSS Input Capacitance, Ciss - pF 20 Ciss - VDS VGS = 0 f = 1MHz VDS = 5V ID = 1µA Cutoff Voltage, VGS(off) - V -1 0.7 0.5 10 7 5 0.3 0.2 3 2 -0.1 50 70 100 200 300 500 700 1000 2000 1 0.7 1 2 3 5 7 10 20 30 Drain Current, IDSS - µA Drain - to - Source Voltage, VDS - V Reverse Transfer Capacitance, Crss - pF 5 3 2 Crss - VDS VGS = 0 f = 1MHz 2 GV - IDSS 0 Voltage Gain, Gv -dB -2 1 0.7 0.5 0.3 0.2 -4 -6 -8 GV : VCC = 5V VIN = 10mV RL = 1.0kΩ f = 1kHz IDSS : VDS = 5.0V 50 70 100 200 300 500 700 1000 0.1 0.7 1 2 3 5 7 10 20 -10 Drain - to - Voltage, VDS - V Drain Current, IDSS - µA RFsemi Technologies, Inc. Rev. 4 RJN1163 Reduced Voltage Characteristics, ∆GVV - dB 2 1 0 -1 -2 -3 -4 -5 50 70 100 200 ∆GVV : VCC = 4.5V to 1.5V VIN = 10mV f=1kHz IDSS : VDS = 5.0V Total Harmonic Distortion, THD - % 3 ∆GVV - IDSS THD - IDSS 5 3 2 THD : VCC = 4.5V VIN = 30mV f = 1kHz IDSS : VDS = 5.0V 1 0.7 0.5 0.3 50 70 100 300 500 700 1000 Drain Current, IDSS - µA Drain Current, IDSS - µA 200 300 500 700 1000 ZIN - IDSS Input Impedance, ZIN - MΩ Output Impedance, Zo - Ω 44 42 ZIN : VCC = 4.5V VIN = 10mV f = 1kHz IDSS : VDS = 5.0V 700 ZO - IDSS ZO : VCC = 4.5V VIN = 10mV f = 1kHz IDSS : VDS = 5.0V 600 500 40 400 38 300 36 200 50 70 100 200 300 500 700 1000 50 70 100 Drain Current, IDSS - µA 200 300 500 700 1000 Drain Current, IDSS - µA Allowable Power Dissipation, PD -mW Total Harmonic Distortion, THD - % 120 PD - Ta 30 20 THD - VIN THD : VCC = 4.5V f = 1kHz IDSS : VDS = 5.0V 0µA = 10 µA 300 A µ 400 100 10 7 5 3 2 80 IDSS 60 40 20 1 0.7 0.5 0 40 80 120 160 200 240 0 0 20 40 60 80 100 120 140 160 o Ambient Temperature, Ta - C Input Voltage, VIN - mV RFsemi Technologies, Inc. Rev. 4