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RLT1060M-350G

RLT1060M-350G

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    RLT1060M-350G - High Power Infrared Laser Diode - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
RLT1060M-350G 数据手册
ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT1060M-350G TECHNICAL DATA High Power Infrared Laser Diode Lasing mode structure: multi mode Lasing wavelength: typ. 1060 nm Optical power: 350 mW Package: 9 mm (SOT-148) PIN CONNECTION: 1) Laser diode anode 2) Laser diode cathode and photodiode cathode 3) Photodiode anode LASERDIODE MUST BE COOLED! NOTE! Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG RATING 400 1.5 10 -20 .. +40 -40 .. +70 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN Optical Output Power Po cw Threshold Current Ith cw Operation Current Iop Po = 350 mW 370 Forward Voltage Uf Po = 350 mW Po = 350 mW Lasing Wavelength 1055 λp Spectral Width FWHM Po = 350 mW ∆λ Po = 350 mW Beam Divergence θ// Po = 350 mW Beam Divergence θ⊥ Monitor Current Im Po = 350 mW 100 TYP 350 25 380 1.6 1060 0.2 25 40 500 MAX 30 390 1.7 1064 0.3 1500 UNIT mW mA mA V nm nm ° ° µA
RLT1060M-350G 价格&库存

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