RT240PD

Preliminary 10W Power Transistor Product Features • High Output Power P1dB = 40dBm(Typ.)@2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package • GaN HFET Description RT240PD Application • Repeater • RF Sub-Systems • Base Station • Converter • IMT-2000 • IS M • MMDS • Wi-Fi, Wi-max The RT240PD is designed for base stations and cell extenders as cellular and GSM, PCS, IMT-2000, ISM, MMDS, Wi-Fi, Wi-MAX frequency systems, GaN HFET is used and attached on a gold sub carrier. Typical Specifications Parameter Frequency (MHz) Small Signal Gain (dB) VSWR (Input / Output) 1dB Compression Point (dBm) * * Specifications 900 17 1800 14 2140 13 2.0 : 1 40 33 29 33 29 +28V / 600mA 31 28 26 50 @ 27dBm/tone -25℃ ~ +70℃ 48 @ 27dBm/tone 39 2640 12 3500 10 CDMA Power (1FA) (dBm) CDMA Power (7FA) (dBm) Vdd / Ids (CDMA Only) ** ** ** WCDMA Power (1FA) (dBm) WCDMA Power (2FA) (dBm) WCDMA Power (4FA) (dBm) OIP3 (dBm) Operating Temp Range * IS-95 ( ±750kHz offset@-29dBc ACPR, ±1.98MHz offset@-39dBc ACPR ) ** Test Model 1ch/64DPCH ( ±5MHz offset@-45dBc ACLR, ±10MHz offset@-50dBc ACLR ) All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor Application Circuit ( 900MHz ) Schematic RT240PD C10 C9 C8 C7 C6 + C5 Z5 Z6 C11 C12 C13 C14 C15 C16 + - R2 RF IN Z1 C1 Z2 Z3 C2 R1 Z4 RT240PD RF OUT Z7 Z8 C3 Z9 C4 Typical Specifications Frequency Gain(S21) Return loss(S11) Return loss(S22) OIP3(@27dBm/tone) * Bill of Material 880 ~ 960MHz 17.2dB -13dB -17dB 50dBm 33dBm 29dBm 40dBm Vds=+28V, Idq=600mA, TC=25℃ Text C1 * Value 12pF 6pF 10pF Size(mm) Text C3 ** Value 100pF Size(mm) 2012 C2 C4 4.7pF 1uF 22uF/+50V 3.3Ω 1608 100Ω 0.7ⅹ40.1 4.5ⅹ6.1 WⅹL 1.4ⅹ9.7 1.4ⅹ9.2 FR-4 , 0.8mm, er=4.7 3216 C5,C11 C6,C12 C7,C13 C8,C14 Z1 Z2 Z3 C9,C15 1608 C10,C16 R1 R2 1.4 ⅹ 4.9 1.4 ⅹ9.6 Z6 Z7 Z8 Z9 PCB 100pF 1nF 100nF CDMA(1FA) CDMA(7FA) P1dB * WⅹL 1.4 ⅹ1.3 9.0ⅹ8.1 0.5ⅹ42.8 Z4 Z5 Test Conditions * IS-95 * S11 & Gain Tuning Point ** S22, Gain & OIP3, P1dB Tuning Point (±750kHz offset@-31dBc, ±1.98MHz offset@-40dBc ACPR) All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor Test Circuit Board RT240PD All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor Measure Data ( 900MHz ) RT240PD ( S-Parameter ) ( OIP3 ) ( CDMA 1FA 33dBm @ -750kHz offset ) ( CDMA 1FA 33dBm @ +750kHz offset ) All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor RT240PD ( CDMA 1FA 33dBm @ -1.98MHz offset ) ( CDMA 1FA 33dBm @ +1.98MHz offset ) ( CDMA 7FA 29dBm @ -1.98MHz offset ) ( CDMA 7FA 29dBm @ +1.98MHz offset ) All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor Application Circuit ( 2.14GHz ) RT240PD Schematic C11 C10 C9 C8 C7 C6 + C12 C13 C14 C15 C16 C17 + Z5 Z6 - R1 RF IN Z1 C1 Z2 Z3 C2 Z4 C3 RT240PD RF OUT Z7 Z8 C4 Z9 C5 Z10 Typical Specifications Frequency Gain(S21) Return loss(S11) Return loss(S22) OIP3(@27dBm/tone) * Bill of Material 2110 ~ 2170MHz 13.5dB -13dB -17dB 51dBm 31dBm 28dBm 26dBm 41dBm Vds=+28V, Idq=600mA, TC=25℃ Text C1 * Value 5pF 2pF 1pF Size(mm) Text C9,C15 *** Value 100nF 2pF Size(mm) 1608 2012 C2 C3 C4 ** C5 1608 C10,C16 C11,C17 R1 1.4ⅹ4.9 1.4ⅹ1.8 Z6 Z7 Z8 Z9 Z10 10pF 1uF 22uF/+50V 100Ω 1608 0.7ⅹ18.5 4.5ⅹ6.1 WⅹL 1.4ⅹ2.2 1.4ⅹ13.2 1.4ⅹ3.7 3216 C6,C12 C7,C13 C8,C14 10pF 100pF 1nF WCDMA(1FA) WCDMA(2FA) WCDMA(4FA) P1dB Z1 Z2 Z3 Z4 Z5 WⅹL * * 1.4ⅹ11.1 9.0ⅹ8.1 0.5ⅹ18.5 Test Conditions * Test Model 1ch/64DPCH PCB FR-4, 0.8mm, , er=4.7 * S11 & Gain Tuning Point ** S11 Tuning Point *** S22, Gain & OIP3, P1dB Tuning Point (±5MHz offset@-45dBc, ±10MHz offset@-50dBc ACLR) All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor Test Circuit Board RT240PD All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor Measure Data ( 2.14GHz ) RT240PD ( S-Parameter ) ( OIP3 ) ( WCDMA 2FA 28dBm @ -5MHz, -10MHz offset ) ( WCDMA 2FA 28dBm @ +5MHz, +10MHz offset ) All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor RT240PD ( WCDMA 4FA 26dBm @ -5MHz, -10MHz offset ) ( WCDMA 4FA 26dBm @ +5MHz, +10MHz offset ) All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor Dimension in mm RT240PD F 1 RT240PD K045101 2-E 3 G H 2 (LID) (LID) D B K I J C (FLANGE) A (FLANGE) L Dimension A B C D E F Size(mm) Min. 20.3 8.3 3.8 14.3 Ø1.48 15.1 Typ. 20.4 8.4 3.9 14.4 Ø 1.5 15.2 Max. 20.5 8.5 4.0 14.5 Ø1.52 15.3 Dimension G H I J K L Size(mm) Min. 1.45 9.7 0.3 1.55 7.9 8.3 Typ. 1.5 9.8 0.35 1.6 8.0 8.4 Max. 1.55 9.9 0.4 1.65 8.1 8.5 Pin Map Pin 1 Gate Pin2 Drain Pin3 Source All specifications may change without notice. www.rfhic.com