SGA-1163-TR1

SGA-1163-TR1

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    SGA-1163-TR1 - DC-6000 MHz SILICON GERMANIUM HBT CASCADEABLE GAIN BLOCK - List of Unclassifed Manufa...

  • 详情介绍
  • 数据手册
  • 价格&库存
SGA-1163-TR1 数据手册
Preliminary Product Description SGA-1163 Sirenza Microdevices’ SGA-1163 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for applications to 6 GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2 GHz and is fabricated using the latest SiGe HBT 50 GHz FT process, featuring 1 micron emitters with Vceo > 7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125ºC operating range (-40C to +85C) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM and narrowband PCS bands. Isolation vs. Frequency 0 -20 DC-6000 MHz Silicon Germanium HBT Cascadeable Gain Block Product Features • DC-6000 MHz Operation • Excellent Isolation, >50 dB at 900 MHz • Single Supply Voltage • Unconditionally Stable • 50 Ohms In/Out, Broadband Match for Operation from DC - 6 GHz dB -40 -60 -80 100 500 900 1900 2400 3500 6000 Applications • Buffer Amplifier for Oscillator Applications • Broadband, High Isolation Frequency MHz Sy mbol P 1dB S 21 Parameters: Test C onditions: Z0 = 50 Ohms, Id = 12 mA, T = 25ºC Output Power at 1dB C ompressi on f = 850 MHz f = 1950 MHz f = D C - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 6000 MHz f = D C - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 6000 MHz f = D C - 2400 MHz f = 2400 - 6000 MHz f = D C - 2400 MHz f = 2400 - 6000 MHz f = 850 MHz f = 1950 MHz f = D C - 1000 MHz f = 1000 - 2400 MHz f = 1000 MHz U nits dB m dB m dB dB dB dB dB dB dB m dB m dB dB pS V mA 4.2 10 10.5 Min. Ty p. -3.3 -4.6 11.7 11.2 9.5 53.3 38.3 28.5 1.3:1 1.8:1 2.1:1 2.2:1 7.9 6.3 3.1 3.4 118 4.6 12 5.0 14 Max. Small Si gnal Gai n S 12 S11 S 22 IP3 NF TD VD ID Reverse Isolati on Input VSWR Output VSWR Thi rd Order Intercept Poi nt Power out per Tone = -20 dBm Noi se Fi gure Group D elay D evi ce Operati ng Voltage D evi ce Operati ng C urrent The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100934 Rev B Preliminary Preliminary SGA-1163 DC-6000 MHz 4.6V SiGe Amplifier S pecification Min DC 4.6 12 11.8 3.1 8.7 -3.8 31.9 62.3 11.5 3.1 7.9 -3.3 33.1 47.6 11.2 3.4 6.3 -4.6 15.7 34.3 11.4 3.4 5.7 -4.4 17.8 30.2 Ty p. Max. 6000 U nit MHz V mA dB dB dB m dB m dB dB dB dB dB m dB m dB dB dB dB dB m dB m dB dB dB dB dB m dB m dB dB T= 25C T= 25C Test C ondition P arameter B andwidth Frequency Range D ev ice B ias Operati ng Voltage Operati ng C urrent 500 MH z Gai n Noi se Fi gure Output IP 3 Output P 1dB Input Return Loss Isolati on 850 MH z Gai n Noi se Fi gure Output IP 3 Output P 1dB Input Return Loss Isolati on 1950 MH z Gai n Noi se Fi gure Output IP 3 Output P 1dB Input Return Loss Isolati on 2400 MH z Gai n Noi se Fi gure Output IP 3 Output P 1dB Input Return Loss Isolati on T= 25C T= 25C T= 25C T= 25C Absolute Maximum Ratings Parameter Max. D evi ce C urrent (ID) Max. D evi ce Voltage (VD) Max. RF Input Power Max. Juncti on Temp. (TJ) Operati ng Temp. Range (TL) Absolute Limit 24 mA 6V -9 dBm +150°C -40°C to +85°C +150°C Max. Storage Temp. Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page one. Bi as condi ti ons should also sati sfy the followi ng expressi on: IDVD < (TJ - TL) / RTH, j-l 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-100934 Rev A Preliminary Preliminary SGA-1163 DC-6000 MHz 4.6V SiGe Amplifier P in # 1 Function D escription GND C onnecti on to ground. Use vi a holes for best performance to reduce lead i nductance as close to ground leads as possi ble. GND S ames as P i n 1 RF IN RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. V cc S upply connecti on. Thi s pi n should be bypassed wi th a sui table capaci tor(s). GND S ames as P i n 1 RF OUT RF output and bi as pi n. D C voltage i s present on thi s pi n, therefore a D C blocki ng capaci tor i s necessary for proper operati on. D ev ice S chematic 2 3 4 5 6 Application Schematic for +5V Operation at 900 MHz 1uF 68pF 33 ohms V CC=+5V 50 ohm microstrip 1 3 100pF 1,2,5 2 4 6 3 4 100pF 50 ohm microstrip Application Schematic for +5V Operation at 1900 MHz 1uF 22pF 33 ohms V CC=+5V 50 ohm microstrip 1 3 68pF 1,2,5 2 4 3 6 68pF 50 ohm microstrip 4 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-100934 Rev A Preliminary Preliminary SGA-1163 DC-6000 MHz 4.6V SiGe Amplifier S21, Id =12mA, T=+25C 24 18 0 -2 0 S12, Id =12mA, T=+25C dB 12 6 0 100 500 900 1900 2400 3500 6000 dB -4 0 -6 0 -8 0 100 500 900 1900 2400 3500 6000 6000 Frequency MHz Frequency MHz S11, Id =12mA, T=+25C 0 -1 0 S22, Id =12mA, T=+25C 0 -1 0 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 6000 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 Frequency MHz Frequency MHz S11, Id=12mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, Id=12mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-100934 Rev A 3500 Preliminary Preliminary SGA-1163 DC-6000 MHz 4.6V SiGe Amplifier S21, Id =12mA, T=-40C 24 18 0 -2 0 S12, Id =12mA, T=-40C dB 1 2 6 0 100 500 900 1900 2400 3500 6000 dB -4 0 -6 0 -8 0 100 500 900 1900 2400 3500 6000 Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Frequency MHz Frequency MHz S11, Id =12mA, T=-40C 0 -1 0 S22, Id =12mA, T=-40C 0 -1 0 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 6000 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 Frequency MHz Frequency MHz S11, Id=12mA, T=-40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, Id=12mA, T=-40C 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-100934 Rev A 6000 Preliminary Preliminary SGA-1163 DC-6000 MHz 4.6V SiGe Amplifier S21, Id =12mA, T=+85C 24 18 0 -2 0 S12, Id =12mA, T=+85C dB 12 6 0 100 500 900 1900 2400 3500 6000 dB -4 0 -6 0 -8 0 100 500 900 1900 2400 3500 6000 Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Frequency MHz Frequency MHz S11, Id =12mA, T=+85C 0 -1 0 S22, Id =12mA, T=+85C 0 -1 0 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 6000 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 Frequency MHz Frequency MHz S11, Id=12mA, T=+85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, Id=12mA, T=+85C 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-100934 Rev A 6000 Preliminary Preliminary SGA-1163 DC-6000 MHz 4.6V SiGe Amplifier Absolute Maximum Ratings Part Number Ordering Information Part N umber SGA-1163-TR1 R eel Siz e 7" D ev ices/R eel 3000 Caution: Operation of this device above any one of these parameters may cause permanent damage. Appropriate precautions in handling, packaging and testing devices must be observed. R ecommended B ias R esistor Values Supply Voltage(Vs) 5V 33 6V 117 7.5V 242 9V 367 12V 617 Thermal Resistance (Lead-Junction): 255° C/W Rbi as (Ohms) 6 5 4 Pin D esignation 1 GND GND RF i n V cc GND RF out Note: Pin 1 is on lower left when you can read package marking Package Marking A11 1 2 3 2 3 4 5 6 Package Dimensions 1.30 (0.051) REF. Pad Layout 0.026 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 0.016 0.425 (0.017) TYP. 0.20 (0.0080 0.10 (0.004) 0.30 REF. 10° 0.30 (0.012) 0.10 (0.0040 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-100934 Rev A
SGA-1163-TR1
物料型号: - 型号:SGA-1163

器件简介: - Sirenza Microdevices的SGA-1163是一款硅锗异质结双极晶体管(SiGe HBT)放大器,适用于高达6GHz的应用,具有出色的隔离度和平直的增益响应。 - 该RFIC是一个两级设计,提供高达40dB的高隔离度(在2GHz时)。

引脚分配: - Pin 1: GND(接地) - Pin 2: GND(同上) - Pin 3: RF IN(射频输入) - Pin 4: Vcc(电源连接) - Pin 5: GND(同上) - Pin 6: RF OUT(射频输出和偏置)

参数特性: - 工作频率范围:DC-6000 MHz - 隔离度:在900 MHz时大于50dB - 单电源电压 - 无条件稳定 - 50 Ohms输入/输出,宽带匹配,适用于DC至6GHz

功能详解: - 作为振荡器应用中的缓冲放大器,覆盖蜂窝、ISM和窄带PCS频段。 - 小信号增益:在不同频段(DC-1000 MHz、1000-2000 MHz、2000-6000 MHz)分别为10.5dB、11.7dB、11.2dB和9.5dB。 - 反向隔离:在不同频段分别为53.3dB、38.3dB和28.5dB。 - 输入与输出电压驻波比:分别为1.3:1、1.8:1、2.1:1和2.2:1。

应用信息: - 适用于作为振荡器应用中的缓冲放大器,具有宽带和高隔离度。

封装信息: - 该PDF文档还包含了封装的尺寸图和布局,但具体数值未在文本中提及。
SGA-1163-TR1 价格&库存

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