SGA-3386

SGA-3386

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    SGA-3386 - DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier - List of Unclassifed Manufacturers

  • 详情介绍
  • 数据手册
  • 价格&库存
SGA-3386 数据手册
Product Description The SGA-3386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Gain & Return Loss vs. Frequency VD= 2.6 V, ID= 35 mA (Typ.) SGA-3386 SGA-3386Z Pb RoHS Compliant & Green Package DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features •Now available in Lead Free, RoHS Compliant, & Green Packaging • High Gain : 15.3 dB at 1950 MHz • Cascadable 50 Ohm • Operates From Single Supply • Low Thermal Resistance Package 20 GAIN 0 -10 Return Loss (dB) 15 Gain (dB) IRL 10 ORL -20 -30 -40 0 1 2 3 Frequency (GHz) 4 5 Applications • • • • PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 5 0 Symbol G Parameter Small Signal Gain Units dB Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 15.5 Typ. 17.0 15.3 14.4 12.3 10.7 24.3 23.8 5000 Max. 19.0 P1dB OIP3 Output Pow er at 1dB Compression Output Third Order Intercept Point dBm dBm MHz dB dB dB V mA °C/W Bandw idth Determined by Return Loss (>10dB) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 5 V RBIAS = 68 Ohms 1950 MHz 1950 MHz 1950 MHz 2.3 31 17.0 24.2 3.5 2.6 35 97 2.9 39 Test Conditions: ID = 35 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-100633 Rev. E SGA-3386 DC-5000 MHz Cascadable MMIC Amplifier Preliminary Typical RF Performance at Key Operating Frequencies Symbol Parameter Unit 100 Frequency Frequency (MHz) Frequency (MHz)(MHz) 500 850 1950 2400 3500 G OIP3 P1dB IRL ORL S12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VS = 5 V VS = 8 V RBIAS = 68 Ohms RBIAS = 39 Ohms dB dBm dBm dB dB dB dB 18.3 17.9 25.8 12.2 17.0 24.3 12.3 15.7 25.4 21.0 3.2 15.3 23.8 10.7 17.0 24.2 20.7 3.5 14.4 23.6 9.9 17.4 25.8 20.6 3.8 12.6 27.1 22.7 20.7 19.8 23.7 20.9 3.1 12.5 22.3 19.7 Test Conditions: = 35 mA Typ. IID = 80 mA Typ. D T = 25ºC TLL = 25ºC OIP Tone Spacing = 1 MHz, Pout per tone = -5 dBm OIP33 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = Z = 50 Ohms ZS = ZLL= 50 Ohms Absolute Maximum Ratings Noise Figure vs. Frequency VD= 2.6 V, ID= 35 mA (Typ.) 5 4 3 2 1 Parameter Max. Device Current (ID) Max. Device Voltage (VD) Absolute Limit 70 mA 4V +18 dBm +150°C -40°C to +85°C +150°C Noise Figure (dB) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. TL=+25ºC 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency VD= 2.6 V, ID= 35 mA (Typ.) 35 30 OIP3 (dBm) P1dB (dBm) 25 20 15 13 11 9 7 P1dB vs. Frequency VD= 2.6 V, ID= 35 mA (Typ.) TL=+25ºC 15 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 TL=+25ºC 5 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-100633 Rev. E SGA-3386 DC-5000 MHz Cascadable MMIC Amplifier Preliminary |S | vs. Frequency 21 |S | vs. Frequency 11 20 15 S21(dB) 10 5 0 0 VD= 2.6 V, ID= 35 mA (Typ.) TL +25°C -40°C +85°C 0 -10 S11(dB) -20 -30 -40 VD= 2.6 V, ID= 35 mA (Typ.) TL +25°C -40°C +85°C 1 2 3 Frequency (GHz) 4 5 0 1 2 3 Frequency (GHz) 4 5 |S | vs. Frequency 12 |S | vs. Frequency 22 -10 -15 S12(dB) -20 -25 -30 0 VD= 2.6 V, ID= 35 mA (Typ.) TL +25°C -40°C +85°C 0 -10 S22(dB) VD= 2.6 V, ID= 35 mA (Typ.) TL +25°C -40°C +85°C -20 -30 -40 1 2 3 Frequency (GHz) 4 5 0 1 2 3 Frequency (GHz) 4 5 NOTE: Full S-parameter data available at www.sirenza.com 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-100633 Rev. E SGA-3386 DC-5000 MHz Cascadable MMIC Amplifier Preliminary Basic Application Circuit R BIAS Application Circuit Element Values Frequency (Mhz) Reference Designator VS 1 uF 1000 pF CD LC 500 850 1950 2400 3500 CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 4 1 SGA-3386 3 2 CB RF out Recommended Bias Resistor Values for ID=35mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) 5V 68 8V 150 10 V 200 12 V 270 VS RBIAS RBIAS 1 uF 1000 pF Note: RBIAS provides DC bias stability over temperature. CD LC CB A33 Mounting Instructions 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. CB Pin # Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Part Identification Marking 3 3 1 2, 4 GND 4 A33 1 2 4 33Z 1 2 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number Reel Size Devices/Reel See Application Note AN-075 for Package Outline Drawing SGA-3386 SGA-3386Z 13" 13" 3000 3000 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-100633 Rev. E
SGA-3386
1. 物料型号: - SGA-3386ZDC-5000 MHz,这是一个可级联的SiGe HBT MMIC放大器。

2. 器件简介: - SGA-3386是一款高性能的SiGe HBT MMIC放大器,具有达林顿配置和1微米发射极,提供高FT(截止频率)和出色的热性能。异质结增加了击穿电压并最小化了结之间的漏电流。发射结非线性的消除导致更高的互调抑制。

3. 引脚分配: - Pin 1: RF N(射频输入引脚),需要外部DC阻断电容器。 - Pin 2 和 Pin 4: GND(接地引脚),建议使用通孔以减少引线电感,尽可能靠近地线引脚。 - Pin 3: RF OUT/BIAS(射频输出和偏置引脚),此引脚存在DC电压,因此需要DC阻断电容器以保证正常工作。

4. 参数特性: - 小信号增益(G):在850 MHz、1950 MHz和2400 MHz频率下分别为15.5 dB、17.0 dB和15.3 dB。 - 1 dB压缩输出功率(P1dB):在850 MHz和1950 MHz频率下分别为12.3 dBm和10.7 dBm。 - 三阶输出截取点(OIP3):在850 MHz和1950 MHz频率下分别为24.3 dBm和23.8 dBm。 - 带宽:由回波损耗(>10dB)决定,为5000 MHz。 - 输入回波损耗(IRL):在1950 MHz频率下为17.0 dB。 - 输出回波损耗(ORL):在1950 MHz频率下为24.2 dB。 - 噪声系数(NF):在1950 MHz频率下为3.5 dB。 - 器件工作电压(V):在2.3 V至2.9 V之间。 - 器件工作电流:在31 mA至39 mA之间。 - 热阻(RTHj-I,结到引脚):为97°C/W。

5. 功能详解: - SGA-3386放大器支持从单电源操作,具有低热阻封装,适用于无线数据、卫星、蜂窝、PCS、GSM和UMTS等应用。

6. 应用信息: - 可作为PA驱动放大器、IF放大器等,适用于无线数据、卫星通信等领域。

7. 封装信息: - 提供无铅、符合RoHS和绿色包装的封装选项。Sirenza的无铅封装采用消光锡完成,并通过后退火工艺减少锡须形成,符合欧盟指令2002/95。
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