SSM4435

S outh S ea S emiconductor SSS ID -8A S S M4435 J ULY ,2004 V er1.1 P -C ha nne l E nha nc e me nt Mode MO S F E T P R O D U C T S U MMA R Y V DS S -30V F E AT U R E S ( m W ) Max 5 R DS (ON) S upe r high de ns e c e ll de s ign for low R D S (O N ) . 20 @ V G S = -10V 35 @ V G S = -4.5V R ugge d a nd re lia ble . S urfa c e Mount P a c ka ge . D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous a @ T J =1 2 5 C b -P uls e d D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V DS VGS ID IDM IS PD TJ, TS TG L imit 30 25 -8 -4 0 -1 . 7 2. 5 -5 5 to 1 5 0 U nit V V A A A W C T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R JA 50 C /W 1 S S M4435 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A =2 5 C unle s s othe rwis e note d) P a ra me te r 5 S ymbol B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS c C ondition V G S = 0 V , I D = - 2 5 0 uA V D S = -2 4 V, V G S = 0 V V G S = 2 5 V, V D S = 0 V V D S = V G S , I D = - 2 5 0 uA V G S = -1 0 V, I D = -8 . 0 A V G S = -4 . 5 V, I D = -5 . 0 A V D S = -5 V, V G S = -1 0 V V D S = -1 5 V, I D = - 8 . 0 A Min Typ C Ma x U nit -3 0 -1 100 -1 -1 . 6 15 22 -2 0 6 1199 362 137 -3 V uA nA V O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e 20 m-ohm 35 m-ohm A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =-15V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd 2 V D = -1 5 V, I D = -1 A , V G E N = - 1 0 V, R G E N = 6 - o hm V DS =-15V, ID=-8A , V G S =-10V V DS =-15V, ID=-8A , V G S =-4. 5V V DS =-15V, ID = -8A , V G S =-10V 17. 6 17. 4 169 95. 4 33. 6 17. 3 3. 3 8. 1 ns ns ns ns nC nC nC nC S S M4435 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V , I s =- 1 . 7 A M in T y p C M a x U n it -0 . 7 4 -1 . 2 V D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b N ote s a . S urfa ce Mounted on F R 4 B oa rd, t