SSM9916H

SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement G D BV DSS RDS(ON) ID 18V 25mΩ 35A S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID @ TC=25°C ID @ TC=125°C IDM PD @ TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 18 ± 12 35 16 90 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 110 Unit °C/W °C/W Rev.2.02 1/29/2004 www.SiliconStandard.com 1 of 6 SSM9916H,J Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 18 0.5 - Typ. 0.03 18 17.5 1.2 7.9 7.3 98 25.6 98 527 258 112 Max. Units 25 40 1 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=18V, VGS=0V VDS=18V ,VGS=0V VGS= ± 12V ID=18A VDS=18V VGS=5V VDS=10V ID=18A RG=3.3 Ω ,VGS=5V RD=0.56Ω VGS=0V VDS=18V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 35 90 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25°C, IS=35A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width