STYN210(S) thru STYN1010(S)
Discrete Thyristors(SCRs)
Dimensions TO-220AB
Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89
G A K
A
G K
Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350
Dimensions TO-263(D2PAK) A G K
Dim. A A1 b b2 c c2 D D1 E E1 e
9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74
.380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029
1. 2. 3. 4.
Gate Collector Emitter Collector Botton Side
L L1 L2 L3 L4 R
ABSOLUTE R ATINGS (limiting values)
Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t V alue Critical rate of rise of on-state current Gate supply:IG = 100mA dIG/dt = 1A/µs Storage junction temperature range Operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case
TYN 210 VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 200 410 400 610 600 810 800 1010 1000 V
Value Tc = 100°C Tc = 100°C tp = 8.3 ms tp = 10 ms tp = 10 ms 10 6.4 105 100 50 50 - 40 to + 150 - 40 to + 125 260
Unit A A A A2S A/µs °C °C
I ²t dI/dt Tstg Tj Tl
STYN210(S) thru STYN1010(S)
Discrete Thyristors(SCRs)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s
STA NDARD
Symbol IGT VGT VGD tgt IH IL dV/dt VTM tq IDRM IRRM VD = 12 V VD = VDRM Test Conditions RL = 33 W RL = 3.3 kW Tj = 25°C Tj = 25°C Tj = 110°C Tj = 25°C Tj = 25°C Tj = 25°C Gate open µs Tj = 110°C Tj = 25°C Tj = 110°C Tj = 25°C Tj = 110°C MAX. 2 MAX. MAX. MIN. TYP MAX. TYP MIN. MAX. TYP TYNx08(S) 15 1.5 0.2 2 30 50 200 1.6 70 0.01 Unit mA V V µs mA mA V/µs V µs mA mA
VD = VDRM IG =40mA dIG/dt = 0.5 A/µs IT = 100 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 20 A Gate open
tp = 380 µs
VD = 67 % VDRM I T M=20A V R =25V dI T M/dt=30 A/µs dV D /dt=50V /µs VDRM rated VRRM rated
THERMA L RESISTANCES
Symbol Rth(j-c) Rth(j-a) J unction to case (DC) Junction to ambient (DC) S =1.0 cm ²
S= copper surface under tab
Parameter
Value 2.5 TO-220AB TO-263 60 45
Unit °C/W °C/W
PRODUCT SELECTOR
Voltage (xxx) Par t Num ber Sen sitivi ty Package
STYN x10S
S T Y N x10
200~~1000 200~~1000
15 mA 15 mA
TO-263 T O-2 20AB
OTHER INFORMATION
Part Number STYN x10S S T Y N x10
No t e: x = voltage
Marking STYN x10S S T Y N x10
Weight 1.5 g 2.3 g
Base Quantity 50 250
Packing mode Tu be B ulk
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