SU200-01A-TO

SU200-01A-TO SU200-01A-SM Large Area InGaAs APDs The largest commercially available InGaAs APD, the SU200-01A is ideal for 1.25 Gbps free space optical communications Tomography. laser range-finding packaging applications, OTDR and high resolution Optical Coherence Standard choices are a 5 pin TO-46 header package with BK7 window or die mounted on a 800 x 850 µm ceramic submount. APPLICATIONS  Free Space Optical Communications   LADAR/LIDAR range finding   Optical Time Domain Reflectometry   Optical Coherence Tomography  FEATURES  Large, 200 µm active diameter   Typical bandwidth over 1 GHz   Over 70% QE from 1000 to 1650 nm   Available in hermetically sealed 5 pin  TO-46 package or on submount Vbd, Id over temperature 48 47 46 45 44 43 42 41 40 0 20 40 Temperature (C) V bd : 60 80 1.E-09 1.E-08 1.E-07 1.E-06 Dark Current at Vbd - 1 (A) Breakdown Voltage (V) NEP vs gain & temperature 1.E-05 7E-13 6E-13 5E-13 NEP (W/  z) H 4E-13 3E-13 2E-13 1E-13 0 0 M=12.5 20 M=10 40 Temperature (C) M=7.5 60 M=5 80 M=2.5 Id @ Vbd-1 3490 U.S. Route 1  rinceton, New Jersey 08540  hone: (609) 520-0610  ax: (609) 520-0638 P P F www.sensorsinc.com nfo@sensorsinc.com i Doc. No. 4110-0043 Rev. D Sensors Unlimited, Inc. reserves the right to make product design or specification changes without notice, ©2004. Effective Date: 03-Mar-05 SU200-01A-TO SU200-01A-SM Parameter Active Diameter APD Breakdown Voltage APD Capacitance APD Gain Factor APD Responsivity Bandwidth (-3 dB) Dark Current Ionization Ratio Series Resistance SPECIFICATIONS (VSUPPLY = 3.3 V, Tc = 25 , VAPD= Vbd-1 , =15 n ) C V λ 50 m Test Conditions I d = 1 0 µA F = 1 M Hz M=1 0 dV(i = 7 mA, i = 4 mA) Symbol D V bd C M R BW Id k αβ =/ Ro Min 40 10 8 5 Typ 200 50 10 8 1 150 0 .4 M ax 60 2500 200 60 Unit  m V fF A/W GH z nA Ώ ABSOLUTE RATINGS Parameter Forward Current Operating Case Temperature Range Optical Input Power @ VAPD Reverse Current Storage Case Temperature Range Symbol If Top PIN Ir Tstg Min 0 -40 Typ M ax 10 85 -7 1 .6 85 Unit mA  C dB m mA  C DIMENSIONS: mm [inch] PIN FUNCTION TO PACKAGE 1 2 3 4 5 APD Anode NC APD Cathode NC GND SILICA SUBMOUNT NOTES: ALL DIMENSIONS: mm [ INCH ] SUBMOUNT PADS HAVE 500 nm OVERLAY OF 99.999% Au BACK-ILLUMINATED PHOTODIODE BUMP BONDED TO SUBMOUNT BACKSIDE COATED WITH 1550 nm AR COATING APD DIAMETER: 200 µm CAUTION: ELECTROSTATIC DISCHARGE SENSITIVE SOLDERING TEMPERATURE SHOULD NOT EXCEED 260°C FOR MORE THAN 10 SECONDS ORDERING INFORMATION: SU200-01A-TO InGaAs APD photodiode with 200  active diameter. in TO-46 package m SU200-01A-SM InGaAs APD photodiode with 200  active diameter. on silica submount m 3490 U.S. Route 1  rinceton, New Jersey 08540  hone: (609) 520-0610  ax: (609) 520-0638 P P F www.sensorsinc.com nfo@sensorsinc.com i Doc. No. 4110-0043 Rev. D Sensors Unlimited, Inc. reserves the right to make product design or specification changes without notice, ©2004. Effective Date: 03-Mar-05