T73227-S08

T73227-S08

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    T73227-S08 - 27 MHz VCXO Clock Generator IC - List of Unclassifed Manufacturers

  • 详情介绍
  • 数据手册
  • 价格&库存
T73227-S08 数据手册
T73227 27 MHz VCXO Clock Generator IC October 2002 1.0 • • • • • Features 3.0 Description One-chip tunable voltage controlled crystal oscillator (VCXO) allows precise system frequency tuning 3.3V operation 8 pin SOIC and MSOP packages Uses inexpensive 20pF pullable crystals with no external capacitors required. 12mA drive capability at TTL levels The T73227 is a single-chip, low-jitter Voltage-ControlledCrystal-Oscillator. The device accepts a 27 MHz, 20 pF crystal, and produces a low jitter output at the same frequency. A 0 to 3.0V control signal is used to fine tune the output clock frequency in the ±100ppm range. This finds use in systems that have frequency matching requirements, such as digital satellite receivers. 2.0 • • • Applications Set-top boxes MPEG Video clock source Oscillator replacement Figure 1: Block Diagram VDD1 VDD2 VIN Load Cap Control X2 27 MHz Pullable Crystal X1 Output Buffer Oscillator CLK Load Caps GND1 GND2 This document contains information on a preproduction product. Specifications and information herein are subject to change without notice. ISO9001 10.29.02 T73227 27 MHz VCXO Clock Generator IC October 2002 8-pin SOIC/MSOP X1 VDD1 VIN GND2 1 2 3 4 8 7 6 5 X2 GND1 VDD2 CLK Table 1: Pin Descriptions PIN TYPE NAME DESCRIPTION 1 2 3 4 5 6 7 8 Xi P I P O P P Xi X1 VDD1 VIN GND2 CLK VDD2 GND1 X2 Crystal Connection. Connect to a 27 MHz Pullable Crystal Core VDD. Connect to 3.3V Voltage input to VCXO. Zero to 3.3V Signal Controls the Frequency of the VCXO. Connect to Ground. Clock Output Pad Driver VDD . Connect to 3.3V Connect to Ground. Crystal Connection. Connect to a 27 MHz pullable crystal. Legend: I = Input O = Output P = Power supply connection Xi = Crystal connections. 2 10.29.02 ISO9001 T73227 27 MHz VCXO Clock Generator IC October 2002 4.0 Functional Block Description The VCXO provides a tunable, low-jitter frequency reference. Loading capacitance for the crystal is internal to the T73227. No external components (other than the crystal resonator itself) are required for operation of the VCXO. Tuning of the VCXO frequency is accomplished by varying the voltage on Vin (Pin 3). The oscillator operates the crystal resonator in the parallel-resonant mode. Crystal warping, or the “pulling” of the crystal oscillation frequency, is accomplished by altering the effective load capacitance presented to the crystal by the oscillator circuit. The actual amount that changing the load capacitance alters the oscillator frequency will be dependent on the characteristics of the crystal as well as the oscillator circuit itself. Specifically, the motional capacitance of the crystal (usually referred to by crystal manufacturers as C1), the static capacitance of the crystal (C0), and the load capacitance (CL) of the oscillator determine the “warping” or “pulling” capability of the crystal in the oscillator circuit. A simple formula to obtain the warping capability of a crystal oscilT73227 Typical VCXO Deviation vs. Vin lator is: Deviation From 27 MHz ppm ∆f ( ppm) = 6 C1 × (C L 2 − C L1)× 10 2 × (C 0 + C L 2 ) × (C 0 + C L1) 150 100 50 0 -50 -100 -150 0.1 0.4 0.7 0.9 1.2 1.5 Vin 1.8 2.0 2.3 2.5 2.7 where CL1 and CL2 are the two extremes of the applied load capacitance. EXAMPLE: A crystal with the following parameters is used. With C1 = 0.025pF, C0 = 6pF, CL1 = 10pF, and CL2 = 20pF, the tuning range is ∆f = 0.025 × (20 − 10 ) × 10 6 = 300 ppm . 2 × (6 + 20 ) × (6 + 10 ) 5.0 Electrical Specifications Table 2: Absolute Maximum Ratings Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These conditions represent a stress rating only, and functional operation of the device at these or any other conditions above the operational limits noted in this specification is not implied. Exposure to maximum rating conditions for extended conditions may affect device performance, functionality, and reliability. PARAMETER Supply Voltage (VSS = ground) Input Voltage, dc Output Voltage, dc Input Clamp Current, dc (VI < 0 or VI > VDD) Output Clamp Current, dc (VI < 0 or VI > VDD) Storage Temperature Range (non-condensing) Ambient Temperature Range, Under Bias Junction Temperature Lead Temperature (soldering, 10s) Input Static Discharge Voltage Protection SYMBOL VDD VI VO IIK IOK TS TA TJ MIN. VSS-0.5 VSS-0.5 VSS-0.5 -25 -50 -65 -55 MAX. 5 VDD+0.5 VDD+0.5 25 50 150 125 125 260 2 UNITS V V V mA mA °C °C °C °C KV 3 10.29.02 ISO9001 T73227 27 MHz VCXO Clock Generator IC October 2002 Table 3: Operating Conditions PARAMETER Core Supply Voltage (VDD) VCXO Control Voltage, VIN Ambient Operating Temperature Range Crystal Resonator Frequency Crystal Load Capacitance SYMBOL VDD VIN TA fXTAL CL(xtal) Fundamental Mode AT cut CONDITIONS/DESCRIPTION MIN. 3.15 0 0 20 27 20 TYP. 3.3 MAX. 3.45 VDD 70 30 UNITS V V °C MHz pF Table 4: DC Electrical Specifications Unless otherwise stated, VDD = 3.15V to 3.45V , no load on any output, and ambient temperature range TA = 0°C to 70°C. PARAMETER Overall Supply Current, Dynamic, with no load Output High Voltage Output Low Voltage SYMBOL CONDITIONS/DESCRIPTION MIN. TYP. MAX. UNITS IDD VOH VOL fXTAL = 27MHz IOH = -12mA IOL = 12mA 2.4 25 0.4 mA V V Voltage Controlled Crystal Oscillator - VDD=3.3V Crystal Loading Capacitance Crystal Gamma VCXO Tuning Range VCXO Tuning Characteristic Crystal ESR CL(xtal) CO/C1 fXTAL = 27MHz; CL(xtal) = 20pF; gamma = 240 As seen by a crystal connected to XIN and XOUT (@ VXTUNE = 1.65V) 20 240 250 75 50 pF ppm ppm/V Ω Note: positive ∆F for positive ∆V Table 5: AC Timing Specifications Unless otherwise stated, VDD = 3.15V to 3.45V, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization data and are not production tested to any specific limits. PARAMETER Clock Output (CLK) Duty Cycle * Jitter, Period (peak-peak) * Rise Time * Fall Time * SYMBOL CONDITIONS/DESCRIPTION MIN. TYP. MAX. UNITS Ratio of high pulse width (as measured from rising edge to next falling edge at VDD/2) to one clock period tj(∆P) tr tf From rising edge to next rising edge at VDD/2, CL = 10pF Measured 0.8V to 2.0V, CL = 10pF Measured 2.0V to 0.8V; CL = 10pF 40 60 150 1.5 1.5 % ps ns ns 4 10.29.02 ISO9001 T73227 27 MHz VCXO Clock Generator IC October 2002 Phase Noise vs. Frequency Offset - 50 Phase Noise, dBc/Hz - 70 - 90 - 110 - 130 - 150 100 1K 10K 100K 1M Frequency Offset from 27MHz 6.0 Ordering Information PACKAGE TYPE 8-pin SOIC 8-pin SOIC 8-pin MSOP 8-pin MSOP DIE SHIPPING CONFIGURATION Tubes Tape and Reel Tubes Tape and Reel Waffle-Pack ORDERING PART NUMBER T73227-S08 T73227-S08-TNR T73227-M08 T73227-M08-TNR T73227-DIE TLSI reserves the right to make changes to its products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those pertaining to warranty, patent infringement, and limitation of liability. TLSI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TLSI’s standard warranty. Testing and other quality control techniques are utilized to the extent TLSI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Customers are responsible for their applications using TLSI devices. Information furnished by TLSI is believed to be accurate and reliable. However, no responsibility is assumed by TLSI for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of TLSI. TLSI and Silicon Driven are trademarks of TLSI, Inc. All other trademarks are the property of their respective owners. TLSI Incorporated, 770 Park Avenue, Huntington NY 11743 • (631) 755-7005 • Fax 631-755-7626 • www.tlsi.com 5 10.29.02 ISO9001
T73227-S08
物料型号: - 型号:T73227 - 描述:27 MHz VCXO Clock Generator IC

器件简介: - T73227是一款单芯片、低抖动的电压控制晶体振荡器(VCXO)。该器件接受一个27 MHz、20 pF的晶体,并在相同频率下产生低抖动的输出。使用0至3.0V的控制信号可以在±100ppm范围内微调输出时钟频率。这在需要频率匹配的系统中非常有用,例如数字卫星接收器。

引脚分配: - 1号引脚(Xi):X1,晶体连接。连接到27 MHz可拉拨晶体。 - 2号引脚(P):VDD1,核心Vpp。连接到3.3V。 - 3号引脚(I):VIN,VCXO的电压输入。0至3.3V信号控制VCXO的频率。 - 4号引脚(P):GND2,连接到地。 - 5号引脚(O):CLK,时钟输出。 - 6号引脚(P):VDD2,垫驱动Vpp。连接到3.3V。 - 7号引脚(P):GND1,连接到地。 - 8号引脚(Xi):X2,晶体连接。连接到27 MHz可拉拨晶体。

参数特性: - 工作电压:3.3V - 封装:8引脚SOIC和MSOP - 使用便宜的20pF可拉拨晶体,无需外部电容器。 - 12mA的驱动能力,达到TTL电平。

功能详解: - VCXO提供可调谐、低抖动的频率参考。晶体的负载电容在T73227内部。除了晶体谐振器本身外,不需要其他外部组件即可运行VCXO。通过改变VIN(引脚3)上的电压来调节VCXO频率。 - 振荡器以并联谐振模式运行晶体谐振器。通过改变振荡器电路对晶体呈现的有效负载电容来实现晶体振荡频率的“拉动”或“拉拨”。改变负载电容对振荡器频率的实际影响将取决于晶体的特性以及振荡器电路本身。

应用信息: - 应用领域:机顶盒、MPEG视频时钟源、振荡器替换。

封装信息: - 封装类型:8引脚SOIC/MSOP。
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