TN2469TK

PHOTO TRANSISTOR 光電晶體 302 Photo Transistor Series Part Number: TN2469TK Package outlines NOTES: 1. All dimensions are in millimeters (inches); 2. Tolerances are ±0.2mm (0.008inch) unless otherwise noted. ITEM Resin (mold) Bonding wire Lens color Dice MATERIALS Epoxy ¯ 30 µm Au Water transparent Silicon PHOTO TRANSISTOR 光電晶體 Part Number: TN2469TK Absolute maximum ratings Parameter Power dissipation Collector-emitter voltage Emitter-collector voltage Operating temperature range Storage temperature range Lead soldering temperature (TA=25℃) Symbol PD VCEO VECO TOP TSTG TSOL Value 100 30 5 -20 ~+80 -20 ~+80 Unit mW V V ℃ ℃ 260℃ for 5 SEC (5mm [0.20”] from body) Electro-optical characteristics Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-emitter saturation voltage Rise time Fall time Collector dark current On state collector current (TA=25℃) Test Condition IC = 100µA I B= 0 IE= 100µA I B= 0 IC=2 mA I B=100µA VCE = 5V IC=1 mA RL = 1000Ω VCE = 20V E e = 0mW/cm2 VCE = 5V Ee = 1mW/cm2 λ=940nm 4-2 Value Symbol Unit Min Typ Max V (BR) CEO V (BR) ECO VCE (SAT) TR TF ICEO I(ON) 30 5 ----0.20 ---15 15 -1.0 --0.3 --100 -V V V µS µS nA mA