US1881K

US1881 Features and Benefits Chopper stabilized amplifier stage Optimized for brushless DC motor applications Miniature high reliability package Operation down to 3.5V CMOS for optimum stability, quality and cost Low power consumption Ordering Information Part No. US1881 US1881 US1881 Temperature Suffix E (-40° to 85° C C) K (-40° to 125° C C) L (-40° to 150° C C) Package Code SO (SOT-23) or UA(TO-92) SO (SOT-23) or UA(TO-92) SO (SOT-23) or UA(TO-92) Applications Solid state switch Brushless DC motor commutation Speed Sensing Linear position sensing Angular position sensing Current sensing Pinout: 1 Functional Diagram UA Package: Pin1: VDD - supply Pin2: GND - Ground Pin3: OUT - Output SO Package: Pin1: VDD - supply Pin2: OUT – Output Pin3: GND - Ground Note: Static electricity sensitive device; please observe ESD precautions. Reverse voltage protection is not included. For reverse polarity protection, a 100Ohm resistor in series with VDD is recommended. 2 Description The US1881 is the industry’s first Hall integrated circuit in SOT-23 package. The US1881 is a bipolar Hall effect sensor IC based on mixed signal CMOS technology. It incorporates advanced chopper stabilization techniques to provide accurate and stable magnetic switch points. There are many applications for this HED in addition to those listed above. The design, specifications and performance have been optimized for commutation applications in 5V and 12V brushless DC motors. In UA packaged device the output transistor will be latched on (Bop) in presence of a sufficiently strong South p ole magnetic field facing the marked side of the package. Similarly, the output will be latched off (Brp) in the presence of a North field. The SOT-23 device behaviour is reverse to the UA device. The SOT-23 output transistor will be latched on (BOP) in the presence of a sufficiently strong North pole magnetic field on the marked side. 3901001881 Rev. 014 Page 1 of 12 Jun/05 US1881 Table of Contents 1 2 3 4 5 6 7 8 Functional Diagram....................................................................................................1 Description .................................................................................................................1 Glossary of Terms......................................................................................................3 Absolute Maximum Ratings ......................................................................................3 US1881 Electrical Characteristics ............................................................................3 Magnetic Characteristics...........................................................................................4 Unique Features .........................................................................................................4 Performance Graphs – unless otherwise specified Ta=25oC, VDD=12V...............5 8.1 8.2 8.3 8.4 8.5 8.6 Typical Magnetic Switch Points vs VDD ........................................................................... 5 Magnetic Switch Points vs Temperature ......................................................................... 5 Output Voltage vs Magnetic Flux Density (Hysteresis).................................................... 5 Typical Saturation Voltage vs Temperature(VDD=12V;Iout=20mA)................................. 5 Typical Supply Current vs VDD ........................................................................................ 6 Maximal Power Dissipation (MPD) Versus Temperature ................................................ 6 9 Application Information .............................................................................................7 9.1 9.2 9.3 Typical Three-Wire Application Circuit ............................................................................ 7 Two-Wire Circuit ............................................................................................................. 7 Automotive and Harsh, Noisy Environments Three-Wire Circuit ..................................... 7 10 11 12 13 14 Application Comments ..............................................................................................7 Pin Definitions and Descriptions ..............................................................................7 Reliability Information ...............................................................................................8 ESD Precautions ........................................................................................................8 Physical Characteristics............................................................................................9 UA Package Information ................................................................................................. 9 SOT23 Package Information......................................................................................... 10 14.1 14.2 15 Disclaimer .................................................................................................................11 3901001881 Rev. 014 Page 2 of 11 Jun/05 US1881 3 Glossary of Terms MilliTesla (mT), Gauss: Units of magnetic flux density; 1 milliTesla = 10 Gauss. CMOS – Complementary Metal-Oxide Silicon - A technology for building logic circuits that employs both “N” and “P” channel MOS transistors. It allows one to make ICs with lots of transistors that consume small amounts of power. 4 Absolute Maximum Ratings Parameter Supply Voltage (Operating) Supply Current (Fault) Output Voltage Output Current (Fault) Power Dissipation, UA/SO packages Maximum Junction Temperature Storage Temperature Symbol VDD IDD VOUT IOUT PD TJ TS Value 24 50 24 50 700/389 165 -50 to 150 Units V mA V mA mW ° C °C Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximumrated conditions for extended periods may affect device reliability. Operating Temperature Range Temperature Suffix “E” Temperature Suffix “K” Temperature Suffix “L” Value -40 to 85 -40 to 125 -40 to 150 Units ° C ° C ° C 5 US1881 Electrical Characteristics DC operating parameters: TA = 25 C, VDD = 12V (unless otherwise specified) Parameter Supply Voltage Supply current Saturation Voltage Output Leakage Output Rise Time Output Fall Time Maximum Switching Frequency Symbol VDD IDD VDS(on) IOFF tr tf fsw Test Conditions Operating B < BOP IOUT = 20mA, B > Bop, VDD=4.5÷18V B < BRP, VOUT=24V VDD = 12V, RL = 1k, CL = 20pF VDD = 12V, RL = 1k, CL = 20pF Operating Min 3.5 1.1 Typ 2.0 0.4 0.01 0.04 0.18 10 Max 24 5.0 0.5 10 Units V mA V uA us us KHz o 3901001881 Rev. 014 Page 3 of 11 Jun/05 US1881 6 Magnetic Characteristics Parameter Operating Point Release Point Hysteresis Operating Point Release Point Hysteresis Operating Point Release Point Hysteresis Operating Point Release Point Hysteresis Symbol BOP BRP BHYS BOP BRP BHYS BOP BRP BHYS BOP BRP BHYS Test Conditions E/LUA, E/LSO,Ta=25 C,Vdd=3.5 … 24V DC E/LUA, E/LSO,Ta=25 C,Vdd=3.5 … 24V DC E/LUA, E/LSO,Ta=25 C,Vdd=3.5 … 24V DC EUA, ESO, Ta=85 C,Vdd=3.5 … 24V DC EUA, ESO, Ta=85 C,Vdd=3.5 … 24V DC EUA, ESO, Ta=85 C,Vdd=3.5 … 24V DC KUA, KSO, Ta=125 C,Vdd=3.5 … 24V DC KUA, KSO, Ta=125 C,Vdd=3.5 … 24V DC KUA, KSO, Ta=125 C,Vdd=3.5 … 24V DC LUA, LSO, Ta=150 C,Vdd=3.5 … 24V DC LUA, LSO, Ta=150 C,Vdd=3.5 … 24V DC LUA, LSO, Ta=150 C,Vdd=3.5 … 24V DC o o o o o o o o o o o o Min 1.0 -9.0 7.0 0.5 -9.5 7.0 0.5 -9.5 7.0 0.5 -9.5 6.0 Typ 5.0 -5.0 10.0 5.0 -5.0 10.0 5.0 -5.0 10.0 5.0 -5.0 10.0 Max 9.0 -1.0 12.0 9.5 -0.5 12.0 9.5 -0.5 12.0 9.5 -0.5 12.5 Units mT mT mT mT mT mT mT mT mT mT mT mT Note: 1 mT = 10 Gauss 7 Unique Features CMOS Hall IC Technology The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage, which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be placed in less space. The small chip size also contributes to lower physical stress and less power consumption. 3901001881 Rev. 014 Page 4 of 11 Jun/05 US1881 8 Performance Graphs – unless otherwise specified Ta=25oC, VDD=12V 8.1 Typical Magnetic Switch Points vs VDD 8.2 Magnetic Switch Points vs Temperature 8.3 Output Voltage vs Magnetic Flux Density 8.4 (Hysteresis) Typical Saturation Voltage vs Temperature(VDD=12V;Iout=20mA) 3901001881 Rev. 014 Page 5 of 11 Jun/05 US1881 8.5 Typical Supply Current vs VDD 8.6 Maximal Power Dissipation (MPD) Versus Temperature The thermal resistance JA and rated power dissipation are defined in accordance with EIA/JESD51-3 Standard. Some differences may be observed between values in the specification tables and the performance graphs. The performance graphs are based on initial characterization of several ICs from one lot. Hence a particular IC may vary from the performance graphs but all ICs should meet the values stated in the specification tables. 3901001881 Rev. 014 Page 6 of 11 Jun/05 US1881 9 Application Information 9.1 Typical Three-Wire Application Circuit 9.2 Two-Wire Circuit Note: With this circuit, precise ON and OFF currents can be detected using only two connecting wires. The resistors RL and Rb can be used to bias the input current. Refer to the part specifications for limiting values. BRP : BOP : IOFF = IR + IDD = VDD/Rb + IDD ION = IOFF + IOUT = IOFF + VDD/RL 9.3 Automotive and Harsh, Noisy Environments Three-Wire Circuit 10 Application Comments If a weak power supply is used or the chip is intended to be used in noisy environment, it is recommended that figure 9.3 from the Application Information section is used. R1 and C1 form a RC filter, which bypasses the disturbances over the supply pin. If a continuous reverse polarity protection is required for supply voltages above 5 Volts, it is recommended to use a diode instead of resistor, because the power dissipation demands become higher. 11 Pin Definitions and Descriptions UA Pins 1 3 2 SO Pins 1 2 3 Pin Name VDD OUT VSS Supply Output Ground Power Supply pin Hall output pin (clamped) Ground pin Type Description 3901001881 Rev. 014 Page 7 of 11 Jun/05 US1881 12 Reliability Information This Melexis device is classified and qualified regarding soldering technology, solderability and moisture sensitivity level, as defined in this specification, according to following test methods: IPC/JEDEC J-STD-020 Moisture/Reflow Sensitivity Classification For Nonhermetic Solid State Surface Mount Devices (classification reflow profiles according to table 5-2) EIA/JEDEC JESD22-A113 Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (reflow profiles according to table 2) CECC00802 Standard Method For The Specification of Surface Mounting Components (SMDs) of Assessed Quality EIA/JEDEC JESD22-B106 Resistance to soldering temperature for through-hole mounted devices EN60749-15 Resistance to soldering temperature for through-hole mounted devices MIL 883 Method 2003 / EIA/JEDEC JESD22-B102 Solderability For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with Melexis. The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive strength between device and board. Based on Melexis commitment to environmental responsibility, European legislation (Directive on the Restriction of the Use of Certain Hazardous substances, RoHS) and customer requests, Melexis has installed a Roadmap to qualify their package families for lead free processes also. Various lead free generic qualifications are running, current results on request. For more information on Melexis lead free statement see quality page at our website: http://www.melexis.com/html/pdf/MLXleadfree-statement.pdf 13 ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products. 3901001881 Rev. 014 Page 8 of 11 Jun/05 US1881 14 Physical Characteristics 14.1 UA Package Information 3901001881 Rev. 014 Page 9 of 11 Jun/05 US1881 14.2 SOT23 Package Information 3901001881 Rev. 014 Page 10 of 11 Jun/05 US1881 15 Disclaimer Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. Melexis reserves the right to change specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with Melexis for current information. This product is intended for use in normal commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical lifesupport or life-sustaining equipment are specifically not recommended without additional processing by Melexis for each application. The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or liability to recipient or any third party shall arise or flow out of Melexis’ rendering of technical or other services. © 2002 Melexis NV. All rights reserved. For the latest version of this document. Go to our website at www.melexis.com Or for additional information contact Melexis Direct: Phone: +32 1367 0495 E-mail: sales_europe@melexis.com Europe and Japan: Phone: +1 603 223 2362 E-mail: sales_usa@melexis.com All other locations: ISO/TS 16949 and ISO14001 Certified 3901001881 Rev. 014 Page 11 of 11 Jun/05