V55C2256164VB 256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
7 System Frequency (fCK) Clock Cycle Time (tCK3) Clock Access Time (tAC3) CAS Latency = 3 Clock Access Time (tAC2) CAS Latency = 2 Clock Access Time (tAC1) CAS Latency = 1 143 MHz 7 ns 5.4 ns 6 ns 19 ns
8PC 125 MHz 8 ns 6 ns 6 ns 19 ns
10 100MHz 10 ns 7 ns 8 ns 22 ns
Features
■ 4 banks x 4Mbit x 16 organization ■ High speed data transfer rates up to 143 MHz ■ Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge ■ Single Pulsed RAS Interface ■ Data Mask for Read/Write Control ■ Four Banks controlled by BA0 & BA1 ■ Programmable CAS Latency:1, 2, 3 ■ Programmable Wrap Sequence: Sequential or Interleave ■ Programmable Burst Length: 1, 2, 4, 8, Full page for Sequential Type 1, 2, 4, 8 for Interleave Type ■ Multiple Burst Read with Single Write Operation ■ Automatic and Controlled Precharge Command ■ Random Column Address every CLK (1-N Rule) ■ Power Down Mode and Clock Suspend Mode ■ Deep Power Mode ■ Auto Refresh and Self Refresh ■ Refresh Interval: 8192 cycles/64 ms ■ Available in 54-ball FBGA, with 9x6 ball array with 3 depupulated rows, 13x8 mm and 54 pin TSOP II ■ VDD=2.5V, VDDQ=1.8V
■ Programmable Power Reduction Feature by partial array activation during Self-Refresh ■ Operating Temperature Range Commercial (0°C to 70°C) Industrial (-40°C to +85°C)
Device Usage Chart
Operating Temperature Range
0°C to 70°C -40°C to 85°C
Package Outline C/T
• •
Access Time (ns) 7
• •
8PC
• •
10
• •
Temperature Mark
Commercial Extended
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Part Number Information
V55C2256164VB
V
ProMOS
55
C
2
25616
ORGANIZATION & REFRESH
16Mx16, 8K : 25616
4
V
B
T
7
OTHER PC : CL2 BLANK: CL3 TEMPERATURE BLNK: 0 - 70C -40 - 85C -40 - 125C
TYPE 53 54 55 DRAM SDRAM MOBILE SDRAM
I:
E: CMOS BANKS VOLTAGE 3: 2: 1: 3.3 V 2.5 V 1.8 V 2 : 2 BANKS 4 : 4 BANKS 8 : 8 BANKS REV LEVEL A: 1st B: 2nd C: 3rd D: 4th PACKAGE
LEAD PLATING T LEAD FREE E F G H TE SF
SPEED I/O V: LVTTL 10 : 100MHz 8 : 125MHz: 75 : 133MHz 7 : 143MHz 6 : 166MHz 5 : 200MHz
GREEN I J K M TI SI
PACKAGE DESC. TSOP 60-Ball FBGA 54-Ball FBGA BGA Die-Stacked TSOP Die-Stacked FBGA
SPECIAL FEATURE L: STANDARD LOW POWER U: ULTRA LOW POWER
S C B TS SS
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V55C2256164VB
Description FBGA
Pkg. C
Pin Count 54
60 Pin WBGA PIN CONFIGURATION Top View
Pin Configuration for x16 devices:
1
2
3 A B C D E F G H J
7
8
9 VDD DQ1 DQ3 DQ5
VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 NC VSS CKE A9 A6 A4
VDDQ DQ0 VSSQ DQ2 VDDQ DQ4 VSSQ DQ6
VDD LDQM DQ7 CAS BA0 A0 A3 RAS BA1 A1 A2 WE CS A10 VDD
UDQM CLK A12 A8 VSS A11 A7 A5
< Top-view >
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V55C2256164VB
Description TSOP-II
Pkg. T
Pin Count 54
54 Pin Plastic TSOP-II PIN CONFIGURATION Top View
VCC I/O1 VCCQ NC I/O2 VSSQ NC I/O3 VCCQ NC I/O4 VSSQ NC VCC NC WE CAS RAS CS BA0 BA1 A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28
356804V-01
Pin Names
CLK CKE Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address Inputs Bank Select Data Input/Output Data Mask Power (+3.3V) Ground Power for I/O’s (+3.3V) Ground for I/O’s Not connected
VSS I/O8 VSSQ NC I/O7 VCCQ NC I/O6 VSSQ NC I/O5 VCCQ NC VSS NC DQM CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS
CS RAS CAS WE A0–A12 BA0, BA1 I/O1–I/O16 LDQM, UDQM VCC VSS VCCQ VSSQ NC
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Description
V55C2256164VB
The V55C2256164VB is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V55C2256164VB achieves high speed data transfer rates up to 143 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock. Operating the four memory banks in an interleaved fashion allows random access operation to occur at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of up to 143 MHz is possible depending on burst length, CAS latency and speed grade of the device.
Signal Pin Description
Pin
CLK
Type
Input
Signal
Pulse
Polarity
Positive Edge
Function
The system clock input. All of the SDRAM inputs are sampled on the rising edge of the clock.
CKE
Input
Level
Active High Activates the CLK signal when high and deactivates the CLK signal when low, thereby initiates either the Power Down mode or the Self Refresh mode. Active Low CS enables the command decoder when low and disables the command decoder when high. When the command decoder is disabled, new commands are ignored but previous operations continue. Active Low When sampled at the positive rising edge of the clock, CAS, RAS, and WE define the command to be executed by the SDRAM. — During a Bank Activate command cycle, A0-A12 defines the row address (RA0-RA12) when sampled at the rising clock edge. During a Read or Write command cycle, A0-An defines the column address (CA0-CAn) when sampled at the rising clock edge.CAn depends from the SDRAM organization: • 8M x 16 SDRAM CA0–CA8. In addition to the column address, A10(=AP) is used to invoke autoprecharge operation at the end of the burst read or write cycle. If A10 is high, autoprecharge is selected and BA0, BA1 defines the bank to be precharged. If A10 is low, autoprecharge is disabled. During a Precharge command cycle, A10(=AP) is used in conjunction with BA0 and BA1 to control which bank(s) to precharge. If A10 is high, all four banks will BA0 and BA1 are used to define which bank to precharge.
CS
Input
Pulse
RAS, CAS WE A0 - A12
Input
Pulse
Input
Level
BA0, BA1 DQx
Input
Level
—
Selects which bank is to be active.
Input Output Input
Level
—
Data Input/Output pins operate in the same manner as on conventional DRAMs.
LDQM UDQM
Pulse
Active High The Data Input/Output mask places the DQ buffers in a high impedance state when sampled high. In Read mode, DQM has a latency of two clock cycles and controls the output buffers like an output enable. In Write mode, DQM has a latency of zero and operates as a word mask by allowing input data to be written if it is low but blocks the write operation if DQM is high. Power and ground for the input buffers and the core logic.
VCC, VSS Supply VCCQ VSSQ Supply — —
Isolated power supply and ground for the output buffers to provide improved noise immunity.
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Operation Definition
V55C2256164VB
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at the positive edge of the clock. The following list shows the thruth table for the operation commands.
Operation
Row Activate Read Read w/Autoprecharge Write Write with Autoprecharge Row Precharge Precharge All Mode Register Set No Operation Device Deselect Auto Refresh Self Refresh Entry Self Refresh Exit
Device State
Idle3 Active3 Active Active
3 3
CKE n-1
H H H H H H H H H H H H
CKE n
X X X X X X X X X X H L
CS
L L L L L L L L L H L L H
RAS
L H H H H L L L H X L L X H X H X H X X H X
CAS
H L L L L H H L H X L L X H X H X H X X H X
WE
H H H L L L L L H X H H X X X X X L X X L X
DQM
X X X X X X X X X X X X
A0-9, A11
V V V V V X X V X X X X
A10
V L H L H L H V X X X X
BS0 BS1
V V V V V V X V X X X X
Active3 Any Any Idle Any Any Idle Idle Idle (Self Refr.) Idle Active4 Any (Power Down) Active Active Idle Deep powerDown
L
H
L H
X
X
X
X
Power Down Entry
H
L
L H
X
X
X
X
Power Down Exit
L
H
L X X L X
X
X
X
X
Data Write/Output Enable Data Write/Output Disable Deep Pwoer Down Entry Deep Pwoer Down Exit
H H H L
X X L H
L H H H
X X X X
X X X X
X X X X
Notes: 1. V = Valid , x = Don’t Care, L = Low Level, H = High Level 2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock before the commands are provided. 3. These are state of bank designated by BS0, BS1 signals. 4. Power Down Mode can not entry in the burst cycle. 5. After Deep Power Down mode exit a full new initialization of memory device is mandatory
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Power On and Initialization
The default power on state of the mode register is supplier specific and may be undefined. The following power on and initialization sequence guarantees the device is preconditioned to each users specific needs. Like a conventional DRAM, the Synchronous DRAM must be powered up and initialized in a predefined manner. During power on, all VCC and VCCQ pins must be built up simultaneously to the specified voltage when the input signals are held in the “NOP” state. The power on voltage must not exceed VCC+0.3V on any of the input pins or VCC supplies. The CLK signal must be started at the same time. After power on, an initial pause of 200 µs is required followed by a precharge of both banks using the precharge command. To prevent data contention on the DQ bus during power on, it is required that the DQM and CKE pins be held high during the initial pause period. Once all banks have been precharged, the Mode Register and Low Power Mode Register Set Command must be issued to initialize the Mode Register. A minimum of two Auto Refresh cycles (CBR) are also required.These may be done before or after programming the Mode Register. Failure to follow these steps may lead to unpredictable startup modes.
V55C2256164VB
rameters to be set as shown in the previous table.
Low Power Mode Register
The Low Power Mode Register controls functions beyond those controlled by the Mode Register. These additional functions are unique to the LowPower DRM and includes a Refresh Period field (TCR) for temperature compensated self-refresh and a Partial-Array Self-Refresh field (PAS). The PASR field is used to specify whether only one quarter (bank 0), one half (bank 0+1) or all banks of the SDRAM array are enabled. Disabled banks will not be refreshed in Self-Refresh mode and written data will be lost. When only bank 0 is selected, it’s possible to partially select only half or mone quarter of bank 0. The TCR field has four entries to set Refresh Period during self-refresh depending on the case temperature of the Low power RAM. It’s required during the initialization seuqence and can be modified when the part id idle.
Read and Write Operation
When RAS is low and both CAS and WE are high at the positive edge of the clock, a RAS cycle starts. According to address data, a word line of the selected bank is activated and all of sense amplifiers associated to the wordline are set. A CAS cycle is triggered by setting RAS high and CAS low at a clock timing after a necessary delay, tRCD, from the RAS t iming. WE is used to define either a read (WE = H) or a write (WE = L) at this stage. SDRAM provides a wide variety of fast access modes. In a single CAS cycle, serial data read or write operations are allowed at up to a 125 MHz data rate. The numbers of serial data bits are the burst length programmed at the mode set operation, i.e., one of 1, 2, 4, 8. Column addresses are segmented by the burst length and serial data accesses are done within this boundary. The first column address to be accessed is supplied at the CAS timing and the subsequent addresses are generated automatically by the programmed burst length and its sequence. For example, in a burst length of 8 with interleave sequence, if the first address is ‘2’, then the rest of the burst sequence is 3, 0, 1, 6, 7, 4, and 5.
Programming the Mode Register
The Mode register designates the operation mode at the read or write cycle. This register is divided into 4 fields. A Burst Length Field to set the length of the burst, an Addressing Selection bit to program the column access sequence in a burst cycle (interleaved or sequential), a CAS Latency Field to set the access time at clock cycle and a Operation mode field to differentiate between normal operation (Burst read and burst Write) and a special Burst Read and Single Write mode. The mode set operation must be done before any activate command after the initial power up. Any content of the mode register can be altered by re-executing the mode set command. All banks must be in precharged state and CKE must be high at least one clock before the mode set operation. After the mode register is set, a Standby or NOP command is required. Low signals of RAS, CAS, and WE at the positive edge of the clock activate the mode set operation. Address input data at this timing defines pa-
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Address Input for Mode Set (Mode Register Operation)
V55C2256164VB
BA1 BA0
A12 ... A7
A6
A5
A4
A3
A2
A1
A0
Address Bus (Ax)
Operation Mode
CAS Latency
BT
Burst Length
Mode Register
Operation Mode
BA1 BA0 A12 A11 A10 A9 A8 A7 0 0 0 0 0 0 0 0 Mode Burst Read/Burst Write Burst Read/Single Write
Burst Type
A3 0 1 Type Sequential Interleave
0
0
0
0
0
1
0
0
CAS Latency
A6 0 0 0 0 1 1 1 1 A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 Latency Reserve 1 2 3 Reserve Reserve Reserve Reserve
Burst Length
Length A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 A0 Sequential 0 1 0 1 0 1 0 1 1 2 4 8 Reserve Reserve Reserve Full page Interleave 1 2 4 8 Reserve Reserve Reserve Reserve
Similar to the page mode of conventional DRAM’s, burst read or write accesses on any column address are possible once the RAS cycle latches the sense amplifiers. The maximum tRAS or the refresh interval time limits the number of random column accesses. A new burst access can be done even before the previous burst ends. The interrupt operation at every clock cycles is supported. When the previous burst is interrupted, the remaining addresses are overridden by the new address with the full burst length. An interrupt which accompanies
with an operation change from a read to a write is possible by exploiting DQM to avoid bus contention. When two or more banks are activated sequentially, interleaved bank read or write operations are possible. With the programmed burst length, alternate access and precharge operations on two or more banks can realize fast serial data access modes among many different pages. Once two or more banks are activated, column to column interleave operation can be done between different pages.
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Low Power Mode Register Table
BA1 BA0 A12 to A5 A4 A3 A2 A1 A0
V55C2256164VB
Address Bus (Ax)
1*)
0*)
all have to be set to "0"
TCR
PASR
Mode Register
Self-Refresh: Temperature-Compensated
A4 0 0 1 1
A3 0 1 0 1
Max case temp
70OC 45OC 15OC 85OC
A2 0 0 0 0 1 1 1
Partial-Array Self Refresh:
A1 0 0 1 1 0 0 1 A0 0 1 0 1 0 1 0 banks to be self-refreshed all banks 1/2 array (BA1=0) 1/4 array (BA1=0, BA0=0) Reserved Reserved 1/8 array (BA1=BA0=0, A11=0) 1/16 array (BA1=BA0=0, A11=A10=0) Reserved
1
1
1
*)BA1 and BA0 must be 1, 0 to select the Extended Mode Register (Vs. the Mode Register)
The Low Power Mode Register must be set during the initialization sequence. Once the device is operational, the Low Power Mode Register set can be issued anytime when the part is idle.
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Burst Length and Sequence:
Burst Starting Address Length (A2 A1 A0) 2 4 xx0 xx1 x00 x01 x10 x11 000 001 010 011 100 101 110 111 nnn 0 1 2 3 4 5 6 7 1 2 3 4 5 6 7 0 2 3 4 5 6 7 0 1 0, 1, 2, 3, Sequential Burst Addressing (decimal) 0, 1 1, 0 1, 2, 3, 0, 3 4 5 6 7 0 1 2 2, 3, 0, 1, 4 5 6 7 0 1 2 3 3 0 1 2 5 6 7 0 1 2 3 4 6 7 0 1 2 3 4 5 7 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 1 0 3 2 5 4 7 6 2 3 0 1 6 7 4 5 0, 1, 2, 3,
V55C2256164VB
Interleave Burst Addressing (decimal) 0, 1 1, 0 1, 0, 3, 2, 3 2 1 0 7 6 5 4 2, 3, 0, 1, 4 5 6 7 0 1 2 3 3 2 1 0 5 4 7 6 1 0 3 2 6 7 4 5 2 3 0 1 7 6 5 4 3 2 1 0
8
Full Page
Cn, Cn+1, Cn+2
Not supported
Refresh Mode
SDRAM has two refresh modes, Auto Refresh and Self Refresh. Auto Refresh is similar to the CAS -before-RAS refresh of conventional DRAMs. All of banks must be precharged before applying any refresh mode. An on-chip address counter increments the word and the bank addresses and no bank information is required for both refresh modes. The chip enters the Auto Refresh mode, when RAS and CAS are held low and CKE and WE are held high at a clock timing. The mode restores word line after the refresh and no external precharge command is necessary. A minimum tRC time is required between two automatic refreshes in a burst refresh mode. The same rule applies to any access command after the automatic refresh operation. The chip has an on-chip timer and the Self Refresh mode is available. It enters the mode when RAS, CAS, and CKE are low and WE is high at a clock timing. All of external control signals including the clock are disabled. Returning CKE to high enables the clock and initiates the refresh exit operation. After the exit command, at least one tRC delay is required prior to any access command.
a data mask function for writes. When DQM is a data mask function for writes. When DQM is activated, the write operation at the next clock is prohibited (DQM Write Mask Latency tDQW = zero clocks).
Power Down
In order to reduce standby power consumption, a power down mode is available. All banks must be precharged and the necessary Precharge delay (trp) must occur before the SDRAM can enter the Power Down mode. Once the Power Down mode is initiated by holding CKE low, all of the receiver circuits except CLK and CKE are gated off. The Power Down mode does not perform any refresh operations, therefore the device can’t remain in Power Down mode longer than the Refresh period (tref) of the device. Exit from this mode is performed by taking CKE “high”. One clock delay is required for mode entry and exit.
Auto Precharge
Two methods are available to precharge SDRAMs. In an automatic precharge mode, the CAS timing accepts one extra address, CA10, to determine whether the chip restores or not after the operation. If CA10 is high when a Read Command is issued, the Read with Auto-Precharge function is initiated. The SDRAM automatically enters the precharge operation one clock before the last data out for CAS latencies 2, two clocks for CAS latencies 3 and three clocks for CAS latencies 4. If CA10 is high when a Write Command is issued, the Write
DQM Function
DQM has two functions for data I/O read and write operations. During reads, when it turns to “high” at a clock timing, data outputs are disabled and become high impedance after two clock delay (DQM Data Disable Latency tDQZ ). It also provides
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with Auto-Precharge function is initiated. The SDRAM automatically enters the precharge operation a time delay equal to tWR (Write recovery time) after the last data in.
V55C2256164VB
Burst Termination
Once a burst read or write operation has been initiated, there are several methods in which to terminate the burst operation prematurely. These methods include using another Read or Write Command to interrupt an existing burst operation, use a Precharge Command to interrupt a burst cycle and close the active bank, or using the Burst Stop Command to terminate the existing burst operation but leave the bank open for future Read or Write Commands to the same page of the active bank. When interrupting a burst with another Read or Write Command care must be taken to avoid I/O contention. The Burst Stop Command, however, has the fewest restrictions making it the easiest method to use when terminating a burst operation before it has been completed. If a Burst Stop command is issued during a burst write operation, then any residual data from the burst write cycle will be ignored. Data that is presented on the I/O pins before the Burst Stop Command is registered will be written to the memory.
Precharge Command
There is also a separate precharge command available. When RAS and WE are low and CAS is high at a clock timing, it triggers the precharge operation. Three address bits, BA0, BA1 and A10 are used to define banks as shown in the following list. The precharge command can be imposed one clock before the last data out for CAS latency = 2, two clocks before the last data out for CAS latency = 3. Writes require a time delay twr from the last data out to apply the precharge command. Bank Selection by Address Bits:
A10 0 0 0 0 1 BA0 BA1 0 0 1 1 X 0 1 0 1 X Bank 0 Bank 1 Bank 2 Bank 3 all Banks
Deep Power Down Mode
TheDeep Power Down mode is an unique functi on with very low standby currents. All internal volat ge generators inside the RAM are stopped and all memory data is lost in this mode. To enter the Deep Power Down mode all banks must be precharged.
Recommended Operation and Characteristics
TA = 0 to 70 °C(Commercial)/-40 to 85 °C(Extended); VSS = 0 V; VCC= 2.5 V,VCCQ = 1.8V
Limit Values Parameter
Supply voltage I/O Supply Voltage Input high voltage Input low voltage Output high voltage (IOUT = – 4.0 mA) Output low voltage (IOUT = 4.0 mA) Input leakage current, any input (0 V < VIN < 3.6 V, all other inputs = 0 V) Output leakage current (DQ is disabled, 0 V < VOUT < VCC )
Symbol
VCC VCCQ VIH VIL VOH VOL II(L) IO(L)
min.
2.3 1.65 0.8xVCCQ – 0.3 VCCQ-0.2 – –5
max.
2.9 2.9 Vcc+0.3 0.3 – 0.4 5
Unit
V V V V V V µA µA
Notes
1, 2 1, 2 1, 2
–5
5
Note: 1. All voltages are referenced to VSS. 2. VIH may overshoot to VCC + 0.8 V for pulse width of < 4ns with 2.5V. VIL may undershoot to -0.8 V for pulse width < 4.0 ns with 2.5V. Pulse width measured at 50% points with amplitude measured peak to DC reference.
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Absolute Maximum Ratings*
Operating temperature range (commercial)0 to 70 °C Operating temperature range (extended) -25 to 85 °C Storage temperature range ............... -55 to 150 °C Input/output voltage .................. -0.3 to (VCC+0.3) V Power supply voltage .......................... -0.3 to 3.6 V Power dissipation .......................................... 0.7 W Data out current (short circuit) ...................... 50 mA
*Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
V55C2256164VB
Operating Currents TA = 0 to 70 °C(Commercial)/-40 to 85 °C(Extended);
VSS = 0 V; VCC= 2.5 V,VCCQ = 1.8V(Recommended Operating Conditions unless otherwise noted)
Max. Symbol
ICC1
Parameter & Test Condition
Operating Current tRC = tRCMIN., tRC = tCKMIN. Active-precharge command cycling, without Burst Operation Precharge Standby Current in Power Down Mode CS =VIH, CKE≤ VIL(max) 1 bank operation
-7
110
-8PC
100
10
90
Unit
mA
Note
7
ICC2P ICC2PS ICC2N
tCK = min. tCK = Infinity tCK = min. tCK = Infinity CKE ≥ VIH(MIN.) CKE ≤ VIL(MAX.) (Power down mode)
0.5 0.5 20 5 25
0.5 0.5 20 5 25
0.5 0.5 20 5 25
mA mA mA mA mA
7 7
Precharge Standby Current in Non-Power Down Mode ICC2NS CS =VIH, CKE≥ VIL(max) ICC3N No Operating Current tCK = min, CS = VIH(min) bank ; active state ( 4 banks)
ICC3P
5
5
5
mA
ICC4
Burst Operating Current tCK = min Read/Write command cycling Auto Refresh Current tCK = min Auto Refresh command cycling Deep Power down Current
110
90
70
mA
7,8
ICC5
165
155
150
mA
7
ICC7
10
10
10
uA
Notes: 7. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tCK and tRC. Input signals are changed one time during tCK. 8. These parameter depend on output loading. Specified values are obtained with output open.
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Temperature Compensated/Partial Array Self-Refresh Currents
Parameter & Test Condition Extended Mode Register M[4:3] Tcase[OC] 85OC max 70OC max 45OC max 15OC max Self Refresh Current Self refresh Mode CKE=0.2V, tck=infinity, 1/2 array activations, Bank 0+1 85OC max 70OCmax 45OC max 15OCmax Self Refresh Current Self refresh Mode CKE=0.2V, tck=infinity, 1/4 array activations, Bank 0 85OC max 70OC max 45OC max 15OC max Self Refresh Current Self refresh Mode CKE=0.2V, tck=infinity, 1/8 array activations, Bank 0 85OC max 70OC max 45OC max 15OC max Self Refresh Current Self refresh Mode CKE=0.2V, tck=infinity, 1/16 array activations, Bank 0 85OC max 70OC max 45OC max 15OC max
ICC6 ICC6 ICC6 ICC6
V55C2256164VB
Symb.
Max.
Unit
Self Refresh Current Self refresh Mode CKE=0.2V, tck=infinity, full array activations, all banks
ICC6
900 600 500 400 600 500 400 350 450 420 350 300 400 350 310 290 350 320 295 280
uA uA uA uA uA uA uA uA uA uA uA uA uA uA uA uA uA uA uA uA
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AC Characteristics 1,2, 3
V55C2256164VB
TA = 0 to 70 °C(Commercial)/-40 to 85 °C(Extended);VSS = 0 V; VCC= 2.5 V,VCCQ = 1.8V, tT=1 ns
Limit Values -7 # Symbol Parameter Min. Max. -8PC Min. Max. Min. -10 Max. Unit Note
Clock and Clock Enable
1 tCK Clock Cycle Time CAS Latency = 3 CAS Latency = 2 CAS Latency = 1 Clock Frequency CAS Latency = 3 CAS Latency = 2 CAS Latency = 1 Access Time from Clock CAS Latency = 3 CAS Latency = 2 CAS Latency = 1 Clock High Pulse Width Clock Low Pulse Width Transition Tim 7 10 20 – – – 8 10 20 – – – 10 12 25 – – – ns ns ns
2
tCK
– – –
143 100 50
– – –
125 100 50
– – –
100 83 40
MHz MHz MHz 2, 4
3
tAC
– _ _ 2.5 2.5 0.3
5.4 6 19 – – 1.2
– _ _ 3 3 0.5
6 6 19 – – 10
– _ _ 3 3 0.5
7 8 22 – – 10
ns ns ns ns ns ns
4 5 6
tCH tCL tT
Setup and Hold Times
7 8 9 10 11 12 tIS tIH tCKS tCKH tRSC tSB Input Setup Time Input Hold Time Input Setup Time CKE Hold Time Mode Register Set-up Time Power Down Mode Entry Time 1.5 0.8 1.5 0.8 14 0 – – – – – 7 2 1 2 1 16 0 – – – – – 8 2.5 1 2.5 1 20 0 – – – – – 8 ns ns ns ns ns ns 5 5 5 5
Common Parameters
13 14 15 16 17 tRCD tRP tRAS tRC tRRD tCCD Row to Column Delay Time Row Precharge Time Row Active Time Row Cycle Time Activate(a) to Activate(b) Command Period CAS(a) to CAS (b) Command Period 15 15 42 60 14 – – 100K – – 20 20 45 60 16 – – 100k – – 20 20 50 70 20 – – 100k – – ns ns ns ns ns 6 6 6 6 6
18
1
–
1
–
1
–
CLK
V55C2256164VB Rev. 1.0 April 2005
14
ProMOS TECHNOLOGIES
AC Characteristics (Cont’d)
Limit Values -7 # Symbol Parameter Min. Max. -8PC Min. Max. Min. -10
V55C2256164VB
Max.
Unit
Note
Refresh Cycle
19 20 tREF tSREX Refresh Period (8192 cycles) Self Refresh Exit Time
—
64
—
—
64
—
—
64
—
ms CLK
1
1
1
Read Cycle
21 22 23 24 tOH tLZ tHZ tDQZ Data Out Hold Time Data Out to Low Impedance Time Data Out to High Impedance Time DQM Data Out Disable Latency 3 1 3 – – – 7 2 3 1 3 – – – 7 2 3 1 3 – – – 7 2 ns ns ns CLK 7 2
Write Cycle
25 26 tWR tDQW Write Recovery Time DQM Write Mask Latency 1 0 – – 1 0 – – 1 0 – – CLK CLK
Notes for AC Parameters:
1. For proper power-up see the operation section of this data sheet. 2. AC timing tests are referenced to the 0.9V crossover point for VCCQ=1.8V components. The transition time is measured between VIH and V IL. All AC measurements assume tT = 1ns with the AC output load circuit shown in Figure 1.
tCK VIH CLK VIL
+ 1.4 V 50 Ohm
tT
tCS COMMAND tCH 1.4V
Z=50 Ohm
tAC tLZ tOH tAC
I/O 50 pF
1.4V
OUTPUT tHZ
Figure 1.
4. If clock rising time is longer than 1 ns, a time (tT/2 – 0.5) ns has to be added to this parameter. 5. If tT is longer than 1 ns, a time (tT – 1) ns has to be added to this parameter. 6. These parameter account for the number of clock cycle and depend on the operating frequency of the clock, as follows: the number of clock cycle = specified value of timing period (counted in fractions as a whole number) Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied once the Self Refresh Exit command is registered. V55C2256164VB Rev. 1.0 April 2005 15
ProMOS TECHNOLOGIES
Timing Diagrams
1. Bank Activate Command Cycle 2. Burst Read Operation 3. Read Interrupted by a Read 4. Read to Write Interval 4.1 Read to Write Interval 4.2 Minimum Read to Write Interval 4.3 Non-Minimum Read to Write Interval 5. Burst Write Operation 6. Write and Read Interrupt 6.1 Write Interrupted by a Write 6.2 Write Interrupted by Read 7. Burst Write & Read with Auto-Precharge 7.1 Burst Write with Auto-Precharge 7.2 Burst Read with Auto-Precharge 8. Burst Termination 8.1 Termination of a Burst Write Operation 8.2 Termination of a Burst Write Operation 9. AC- Parameters 9.1 AC Parameters for a Write Timing 9.2 AC Parameters for a Read Timing 10. Mode Register Set 11. Power on Sequence and Auto Refresh (CBR) 12. Power Down Mode 13. Self Refresh (Entry and Exit) 14. Auto Refresh (CBR)
V55C2256164VB
V55C2256164VB Rev. 1.0 April 2005
16
ProMOS TECHNOLOGIES
Timing Diagrams (Cont’d)
15. Random Column Read ( Page within same Bank) 15.1 CAS Latency = 2 15.2 CAS Latency = 3 16. Random Column Write ( Page within same Bank) 16.1 CAS Latency = 2 16.2 CAS Latency = 3 17. Random Row Read ( Interleaving Banks) with Precharge 17.1 CAS Latency = 2 17.2 CAS Latency = 3 18. Random Row Write ( Interleaving Banks) with Precharge 18.1 CAS Latency = 2 18.2 CAS Latency = 3 19. Precharge Termination of a Burst 19.1 CAS Latency = 2 19.2 CAS Latency = 3
V55C2256164VB
V55C2256164VB Rev. 1.0 April 2005
17
ProMOS TECHNOLOGIES
V55C2256164VB
1. Bank Activate Command Cycle (CAS latency = 3)
T0 CLK
..........
T1
T
T
T
T
T
ADDRESS
Bank A Row Addr.
Bank A Col. Addr.
..........
Bank B Row Addr.
Bank A Row Addr.
tRCD
tRRD
NOP Write A with Auto Precharge .......... Bank B Activate NOP Bank A Activate
COMMAND
: “H” or “L”
Bank A Activate
NOP
tRC
2. Burst Read Operation (Burst Length = 4, CAS latency = 2, 3)
T0 CLK T1 T2 T3 T4 T5 T6 T7 T8
COMMAND
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CAS latency = 2
tCK2, I/O’s
CAS latency = 3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
tCK3, I/O’s
DOUT A0
DOUT A1
DOUT A2
DOUT A3
V55C2256164VB Rev. 1.0 April 2005
18
ProMOS TECHNOLOGIES
3. Read Interrupted by a Read (Burst Length = 4, CAS latency = 2, 3)
T0 CLK T1 T2 T3 T4 T5 T6
V55C2256164VB
T7
T8
COMMAND
READ A
READ B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CAS latency = 2
tCK2, I/O’s
CAS latency = 3
DOUT A0
DOUT B0
DOUT B1
DOUT B2
DOUT B3
tCK3, I/O’s
DOUT A0
DOUT B0
DOUT B1
DOUT B2
DOUT B3
4.1 Read to Write Interval
(Burst Length = 4, CAS latency = 3)
T0 CLK T1 T2 T3 T4 T5 T6 T7 T8
Minimum delay between the Read and Write Commands = 4+1 = 5 cycles
DQM
tDQZ
tDQW
COMMAND
NOP
READ A
NOP
NOP
NOP
NOP
WRITE B
NOP
NOP
I/O’s
: “H” or “L”
DOUT A0 Must be Hi-Z before the Write Command
DIN B0
DIN B1
DIN B2
V55C2256164VB Rev. 1.0 April 2005
19
ProMOS TECHNOLOGIES
4.2 Minimum Read to Write Interval (Burst Length = 4, CAS latency = 2)
T0 CLK
tDQW
V55C2256164VB
T1
T2
T3
T4
T5
T6
T7
T8
DQM
tDQZ
1 Clk Interval BANK A ACTIVATE
COMMAND
NOP
NOP
NOP
READ A
WRITE A
NOP
NOP
NOP
Must be Hi-Z before the Write Command CAS latency = 2
tCK2, I/O’s
: “H” or “L”
DIN A0
DIN A1
DIN A2
DIN A3
4.3 Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2, 3)
T0 CLK
tDQW
T1
T2
T3
T4
T5
T6
T7
T8
DQM
tDQZ
COMMAND
NOP
READ A
NOP
NOP
READ A
NOP
WRITE B
NOP
NOP
CAS latency = 2
tCK1, I/O’s
CAS latency = 3
DOUT A0
DOUT A1 Must be Hi-Z before the Write Command
DIN B0
DIN B1
DIN B2
tCK2, I/O’s
: “H” or “L”
DOUT A0
DIN B0
DIN B1
DIN B2
V55C2256164VB Rev. 1.0 April 2005
20
ProMOS TECHNOLOGIES
5. Burst Write Operation (Burst Length = 4, CAS latency = 2, 3)
T0 T1 T2 T3 T4 T5 T6
V55C2256164VB
T7
T8
CLK
COMMAND
NOP
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
I/O’s
DIN A0
DIN A1
DIN A2
DIN A3
don’t care
The first data element and the Write are registered on the same clock edge.
Extra data is ignored after termination of a Burst.
6.1 Write Interrupted by a Write (Burst Length = 4, CAS latency = 2, 3)
T0 CLK T1 T2 T3 T4 T5 T6 T7 T8
COMMAND
NOP
WRITE A
WRITE B
NOP
NOP
NOP
NOP
NOP
NOP
1 Clk Interval
I/O’s
DIN A0
DIN B0
DIN B1
DIN B2
DIN B3
V55C2256164VB Rev. 1.0 April 2005
21
ProMOS TECHNOLOGIES
6.2 Write Interrupted by a Read (Burst Length = 4, CAS latency = 2, 3)
T0 CLK T1 T2 T3 T4 T5 T6
V55C2256164VB
T7
T8
COMMAND
NOP
WRITE A
READ B
NOP
NOP
NOP
NOP
NOP
NOP
CAS latency = 2
tCK2, I/O’s
CAS latency = 3
DIN A0
don’t care
DOUT B0
DOUT B1
DOUT B2
DOUT B3
tCK3, I/O’s
DIN A0
don’t care
don’t care
DOUT B0
DOUT B1
DOUT B2
DOUT B3
Input data must be removed from the I/O’s at least one clock cycle before the Read dataAPpears on the outputs to avoid data contention.
7. Burst Write with Auto-Precharge Burst Length = 2, CAS latency = 2, 3)
T0 CLK T1 T2 T3 T4 T5 T6 T7 T8
COMMAND
BANK A ACTIVE
NOP
NOP
WRITE A
Auto-Precharge
NOP
NOP
NOP
NOP
NOP
tWR
CAS latency = 2
tRP
I/O’s
CAS latency = 3
DIN A0
DIN A1
tWR
* *
tRP
I/O’s
DIN A0
DIN A1 Begin Autoprecharge
Bank can be reactivated after trp
V55C2256164VB Rev. 1.0 April 2005
22
ProMOS TECHNOLOGIES
7.2 Burst Read with Auto-Precharge Burst Length = 4, CAS latency = 2, 3)
T0 CLK T1 T2 T3 T4 T5 T6
V55C2256164VB
T7
T8
COMMAND
READ A
NOP
NOP
NOP
NOP tRP
NOP
NOP
NOP
NOP
CAS latency = 2
tCK2, I/O’s
CAS latency = 3
DOUT A0
DOUT A1
* *
DOUT A2
DOUT A3 tRP DOUT A2 DOUT A3
tCK3, I/O’s
DOUT A0
DOUT A1
Bank can be reactivated after tRP
*
Begin Autoprecharge
V55C2256164VB Rev. 1.0 April 2005
23
ProMOS TECHNOLOGIES
8.1 Termination of a Burst Read Operation (CAS latency = 2, 3)
T0 CLK T1 T2 T3 T4 T5 T6
V55C2256164VB
T7
T8
COMMAND
READ A
NOP
NOP
NOP
Burst Stop
NOP
NOP
NOP
NOP
CAS latency = 2
tCK2, I/O’s
CAS latency = 3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
tCK3, I/O’s
DOUT A0
DOUT A1
DOUT A2
DOUT A3
8.2 Termination of a Burst Write Operation (CAS latency = 2, 3)
T0 CLK T1 T2 T3 T4 T5 T6 T7 T8
COMMAND
CAS latency = 2,3
NOP
WRITE A
NOP
NOP
Burst Stop
NOP
NOP
NOP
NOP
I/O’s
DIN A0
DIN A1
DIN A2
don’t care
Input data for the Write is masked.
V55C2256164VB Rev. 1.0 April 2005
24
9.1 AC Parameters for Write Timing
Burst Length = 4, CAS Latency = 2
T5 T10 T11 T12 T13 T14 T15 T16 T18 T19 T20 T22 T17 T21 T6 T7 T8 T9 T1 T2 T3 T4
T0
CLK tCL tCS tCH
Begin Auto Precharge Bank A Begin Auto Precharge Bank B
tCH tCKH
tCK2
V55C2256164VB Rev. 1.0 April 2005
CKE
tCKS
ProMOS TECHNOLOGIES
CS
RAS
CAS
WE
25 tAH
RAx RBx RAy RAz RBy RAx CAx RBx CBx RAy RAy RAz RBy
BA
AP
tAS
Addr
DQM tRCD tRC
Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3 Ay0
tDS tDH
Ay1 Ay2 Ay3
tDPL
tRP
tRRD
I/O
Hi-Z
V55C2256164VB
Activate Write with Activate Write with Activate Command Auto Precharge Command Auto Precharge Command Bank A Command Bank B Command Bank A Bank A Bank B
Write Command Bank A
Precharge Command Bank A
Activate Command Bank A
Activate Command Bank B
\
9.2 AC Parameters for Read Timing
Burst Length = 2, CAS Latency = 2
T2 T10 T11 T12 T13 T3 T4 T5 T6 T7 T8 T9 T0 T1
CLK tCH tCS tCKS tCH
Begin Auto Precharge Bank B
tCL tCKH
tCK2
V55C2256164VB Rev. 1.0 April 2005
CKE
ProMOS TECHNOLOGIES
CS
RAS
CAS
WE
26 tAH
RAx RBx
BA
AP tAS
RAx CAx RBx
RAy
Addr tRRD
RBx
RAy
tRAS tRC tAC2 tRCD tLZ tAC2 tOH
Ax0
DQM
tHZ
Ax1 Bx0
tRP tHZ
Bx1
I/O
Activate Command Bank A
Hi-Z
V55C2256164VB
Read Command Bank A
Activate Command Bank B
Read with Auto Precharge Command Bank B
Precharge Command Bank A
Activate Command Bank A
\
10. Mode Register Set
T2 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T3 T4 T5 T6 T7 T8 T9
T0
T1
V55C2256164VB Rev. 1.0 April 2005
CLK
CKE 2 Clock min.
ProMOS TECHNOLOGIES
CS
RAS
CAS
27
Address Key Mode Register Set Command Any Command
WE
BA
AP
Addr
V55C2256164VB
Precharge Command All Banks
\
11. Power on Sequence and Auto Refresh (CBR)
T T1 T T T T T TT T T T T T T T TT T T T T
T0
CLK
V55C2256164VB Rev. 1.0 April 2005
CKE Minimum of 2 Refresh Cycles are required 2 Clock min.
High level is required
ProMOS TECHNOLOGIES
CS
RAS
CAS
WE
28
BA
AP
Address Key
Addr
DQM tRP tRC
I/O
Hi-Z
V55C2256164VB
Precharge 1st Auto Refresh Command Command All Banks
2nd Auto Refresh Command
Mode Register Set Command
Low Power Mode Register Set Command
Inputs must be stable for 200∝s
\
12. Power Down Mode
Burst Length = 4, CAS Latency = 2
T2 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T3 T4 T5 T6 T7 T8 T9
T0
T1
CLK tCKSP
V55C2256164VB Rev. 1.0 April 2005
CKE
ProMOS TECHNOLOGIES
CS
RAS
CAS
WE
29
Precharge Command Bank A Power Down Mode Entry Power Down Mode Exit Any Command
BA
AP
RAx
Addr
RAx
DQM
I/O
Hi-Z
V55C2256164VB
Activate Command Bank A
13. Self Refresh (Entry and Exit)
T1 T T T T T T T T T T T T T T2 T3 T4 T5 T T T T
T0
CLK
V55C2256164VB Rev. 1.0 April 2005
CKE
t CKSR tSREX
ProMOS TECHNOLOGIES
CS
RAS
CAS
WE
30
BA
AP
Addr tRC
DQM
I/O
Hi-Z
All Banks must be idle
Self Refresh Entry
Begin Self Refresh Exit Command Self Refresh Exit Command issued Self Refresh Exit
V55C2256164VB
\
14. Auto Refresh (CBR)
Burst Length = 4, CAS Latency = 2
T3 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T4 T5 T6 T7 T8 T9
T0 T2
T1
CLK
V55C2256164VB Rev. 1.0 April 2005
tCK2
CKE
ProMOS TECHNOLOGIES
CS
RAS
CAS
31
WE
BA
AP
RAx
Addr tRP
(Minimum Interval)
RAx
CAx
DQM
tRC
tRC
I/O
Hi-Z
Ax0
Ax1
Ax2
Ax3
V55C2256164VB
Precharge Command All Banks
Auto Refresh Command
Auto Refresh Command
Activate Command Bank A
Read Command Bank A
\)
15.1 Random Column Read (Page within same Bank) (1 of 2)
Burst Length = 4, CAS Latency = 2
T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T1 T10 T2 T3 T4 T5 T6 T7 T8 T9
T0
CLK
V55C2256164VB Rev. 1.0 April 2005
tCK2
CKE
ProMOS TECHNOLOGIES
CS
RAS
CAS
32
CAw CAx CAy
WE
BA
AP
RAw
RAz
Addr
RAw
RAz
CAz
DQM
I/O
Aw0 Aw1
Hi-Z
Aw2
Aw3
Ax0
Ax1
Ay0
Ay1
Ay2
Ay3
Az0
Az1
Az2
Az3
V55C2256164VB
Activate Command Bank A Read Command Bank A
Read Command Bank A
Read Command Bank A
Precharge Command Bank A
Activate Command Bank A
Read Command Bank A
\)
15.2 Random Column Read (Page within same Bank) (2 of 2)
Burst Length = 4, CAS Latency = 3
T2 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T3 T4 T5 T6 T7 T8 T9
T0
T1
CLK
V55C2256164VB Rev. 1.0 April 2005
tCK3
CKE
ProMOS TECHNOLOGIES
CS
RAS
CAS
33
CAw CAx CAy
WE
BA
AP
RAw
RAz
Addr
RAw
RAz
CAz
DQM
I/O
Hi-Z Aw0
Aw1
Aw2
Aw3
Ax0
Ax1
Ay0
Ay1
Ay2
Ay3
V55C2256164VB
Activate Command Bank A Read Command Bank A
Read Command Bank A
Read Command Bank A
Precharge Command Bank A
Activate Command Bank A
Read Command Bank A
\)
16.1 Random Column Write (Page within same Bank) (1 of 2)
Burst Length = 4, CAS Latency = 2
T2 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T3 T4 T5 T6 T7 T8 T9
T0
T1
CLK
tCK2
V55C2256164VB Rev. 1.0 April 2005
CKE
ProMOS TECHNOLOGIES
CS
RAS
CAS
WE
34
CBz CBx CBy
BA
AP
RBz
RBz RAw
Addr
RBz
RBz RAw
CBz CAx
DQM
I/O
Hi-Z
DBw0 DBw1 DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy2 DBy3
DBz0 DBz1 DBz2 DBz3
V55C2256164VB
Activate Command Bank B
Write Command Bank B
Write Command Bank B
Write Command Bank B
Precharge Command Bank B
Activate Command Bank B
Write Command Bank B
\)
16.2 Random Column Write (Page within same Bank) (2 of 2)
Burst Length = 4, CAS Latency = 3
T1 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T2 T3 T4 T5 T6 T7 T8 T9
T0
CLK
V55C2256164VB Rev. 1.0 April 2005
tCK3
CKE
ProMOS TECHNOLOGIES
CS
RAS
CAS
35
CBz CBx CBy
WE
BA
AP
RBz
RBz
Addr
RBz
RBz
CBz
DQM
I/O
Hi-Z
DBw0 DBw1 DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy2 DBy3
DBz0 DBz1
V55C2256164VB
Activate Command Bank B Write Command Bank B
Write Command Bank B
Write Command Bank B
Precharge Command Bank B
Activate Command Bank B
Write Command Bank B
17.1 Random Row Read (Interleaving Banks) (1 of 2)
Burst Length = 8, CAS Latency = 2
T9 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T2 T3 T4 T5 T6 T7 T8
T0
T1
CLK
tCK2
V55C2256164VB Rev. 1.0 April 2005
CKE
High
ProMOS TECHNOLOGIES
CS
RAS
CAS
WE
36
RAx RBy RAx CAx RBy CBy
A11(BS)
A10
RBx
A0 - A9 tAC2
RBx
CBx
DQM
tRCD
tRP
I/O
Bx0 Bx1 Bx2 Bx3
Hi-Z
Bx4
Bx5
Bx6
Bx7
Ax0
Ax1
Ax2
Ax3
Ax4
Ax5
Ax6
Ax7
By0
By1
V55C2256164VB
Activate Command Bank B
Read Command Bank B
Activate Command Bank A
Precharge Command Bank B Read Command Bank A
Activate Command Bank B
Read Command Bank B
17. 2 Random Row Read (Interleaving Banks) (2 of 2)
Burst Length = 8, CAS Latency = 3
T2 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T3 T4 T5 T6 T7 T8 T9
T0
T1
CLK
tCK3
V55C2256164VB Rev. 1.0 April 2005
CKE
High
ProMOS TECHNOLOGIES
CS
RAS
CAS
WE
37
RAx CBx RAx CAx
A11(BS)
A10
RBx
RBy
A0 - A9 tAC3
RBx
RBy
CBy
DQM
tRCD
tRP
I/O
Bx0 Bx1
Hi-Z
Bx2
Bx3
Bx4
Bx5
Bx6
Bx7
Ax0
Ax1
Ax2
Ax3
Ax4
Ax5
Ax6
Ax7
By0
V55C2256164VB
Activate Command Bank B
Read Command Bank B
Activate Command Bank A
Read Command Bank A
Precharge Command Bank B
Activate Command Bank B
Read Command Bank B
Precharge Command Bank A
18.1 Random Row Write (Interleaving Banks) (1 of 2)
Burst Length = 8, CAS Latency = 2
T9 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T2 T3 T4 T5 T6 T7 T8
T0
T1
CLK
tCK2
V55C2256164VB Rev. 1.0 April 2005
CKE
High
ProMOS TECHNOLOGIES
CS
RAS
CAS
WE
38
RBx RAy RBx CBx RAy
A11(BS)
A10
RAx
A0 - A9 tDPL
RAx
CAX CAy
CAy
tRCD
DQM
tRP
tDPL
I/O
Hi-Z
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3 DAy4
V55C2256164VB
Activate Command Bank A
Write Command Bank A
Activate Command Bank B
Write Command Bank B Precharge Command Bank A
Activate Command Bank A
Write Command Bank A Precharge Command Bank B
18.2 Random Row Write (Interleaving Banks) (2 of 2)
Burst Length = 8, CAS Latency = 3
T0 T2 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T3 T4 T5 T6 T7 T8 T9
T1
CLK
V55C2256164VB Rev. 1.0 April 2005
tCK3
CKE
High
ProMOS TECHNOLOGIES
CS
RAS
CAS
39
RBx CAX RBx CBx
WE
A11(BS)
A10
RAx
RAy
A0 - A9
RAx
RAy
CAy
tRCD
tDPL
tRP
tDPL
DQM
I/O
Hi-Z
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3
V55C2256164VB
Activate Command Bank A
Write Command Bank A
Activate Command Bank B
Write Command Bank B
Precharge Command Bank A
Activate Command Bank A
Write Command Bank A
Precharge Command Bank B
19.1 Precharge Termination of a Burst (1 of 2)
T1 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T2 T3 T4 T5 T6 T7 T8 T9
Burst Length = 8, CAS Latency = 2
T0
CLK tCK2
V55C2256164VB Rev. 1.0 April 2005
CKE
High
ProMOS TECHNOLOGIES
CS
RAS
CAS
WE
40
RAy RAz CAx RAy CAy RAz CAz
BA
AP
RAx
Addr tRP
RAx
tRP
tRP
DQM
I/O
DAx0 DAx1 DAx2 DAx3
Hi-Z
Ay0
Ay1
Ay2
Az0
Az1
Az2
Activate Command Bank A
V55C2256164VB
Write Precharge Command Command Bank A Bank A Precharge Termination of a Write Burst. Write data is masked.
Activate Command Bank A
Read Command Bank A
Precharge Command Bank A
Activate Command Bank A
Read Command Bank A
Precharge Command Bank A Precharge Termination of a Read Burst.
19.2 Precharge Termination of a Burst (2 of 2)
T1 T10 T11 T13 T14 T15 T16 T18 T19 T20 T22 T12 T17 T21 T2 T3 T4 T5 T6 T7 T8 T9
Burst Length = 4, 8, CAS Latency = 3
T0
CLK tCK3
V55C2256164VB Rev. 1.0 April 2005
CKE
High
ProMOS TECHNOLOGIES
CS
RAS
CAS
WE
41
RAy RAz CAx RAy CAy RAz
BA
AP
RAx
Addr tRP
RAx
tRP
DQM
I/O
DAx0
Hi-Z
Ay0
Ay1
Ay2
Activate Command Bank A Write Command Bank A Precharge Command Bank A Write Data is masked
Activate Command Bank A Precharge Termination of a Write Burst.
Read Command Bank A
Precharge Command Bank A
Activate Command Bank A Precharge Termination of a Read Burst.
V55C2256164VB
ProMOS TECHNOLOGIES
20.1 Deep Power Down Mode Entry
V55C2256164VB
CLK CKE CS WE CAS RAS Addr. DQM DQ input DQ output High-Z
t RP
Precharge Command Deep Power Down Entry
Normal Mode
Deep Power Down Mode
DP1.vsd
The deep power down mode has to be maintained for a minimum of 100µs.
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ProMOS TECHNOLOGIES
20.2 Deep Power Down Exit
V55C2256164VB
The deep power down mode is exited by asserting CKE high. After the exit, the following sequence is needed to enter a new command: 1. Maintain NOP input conditions for a minimum of 200 µs 2. Issue precharge commands for all banks of the device 3. Issue eight or more autorefresh commands 4. Issue a mode register set command to initialize the mode register 5. Issue an extended mode register set command to initialize the extende mode register
CLK CK E CS RAS CAS WE
Deep Power Do wn exi t
V55C2256164VB Rev. 1.0 April 2005
200
s
tRP
tRC
All banks prec harge
Au to refresh
Auto refresh
Mode Register Set
Exte nded Mode Regis ter Set
New Com mand Acce pted Here
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ProMOS TECHNOLOGIES
Package Diagram
54-Pin Plastic TSOP-II (400 mil)
0.047 [1.20] MAX 0.04 ±0.002 [1 ±0.05]
V55C2256164VB
0.400 ±0.005 [10.16 ±0.13]
+0.004 0.006 -0.002 +0.01 0.15 -0.05
0°–5°
.004 [0.1] 0.031 [0.80] +0.002 0.016 -0.004 +0.05 0.40 -0.10 .008 [0.2] M 54x 54 28 0.006 [0.15] MAX
0.463 ± 0.008 [11.76 ± 0.20]
0.024 ± 0.008 [0.60 ± .020]
Index Marking
1
1
27
0.881 -0.01 [22.38 -0.25]
1 Does not include plastic or metal protrusion of 0.15 max. per side
Unit in inches [mm]
V55C2256164VB Rev. 1.0 April 2005
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ProMOS TECHNOLOGIES
FBGA-BOC package 54 BGA package with 3 depop. rows
Units (mm)
V55C2256164VB
13
V55C2256164VB Rev. 1.0 April 2005
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ProMOS TECHNOLOGIES
WORLDWIDE OFFICES
V55C2256164VB
SALES OFFICES:
TAIWAN(Hsinchu)
NO. 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-566-3952 FAX: 886-3-578-6028
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© Copyright ,ProMOS TECHNOLOGY.
Printed in U.S.A.
The information in this document is subject to change without notice. ProMOS TECH makes no commitment to update or keep current the information contained in this document. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of ProMOS TECH.
ProMOS TECH subjects its products to normal quality control sampling techniques which are intended to provide an assurance of high quality products suitable for usual commercial applications. ProMOS TECH does not do testing appropriate to provide 100% product quality assurance and does not assume any liability for consequential or incidental arising from any use of its products. If such products are to be used in applications in which personal injury might occur from failure, purchaser must do its own quality assurance testing appropriate to such applications.
V55C2256164VB Rev. 1.0 April 2005
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