WSF256K8-72CI

WSF256K8-72CI

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    WSF256K8-72CI - 256Kx8 SRAM/ FLASH MODULE - List of Unclassifed Manufacturers

  • 详情介绍
  • 数据手册
  • 价格&库存
WSF256K8-72CI 数据手册
WSF256K8-XCX 256Kx8 SRAM/ FLASH MODULE FIG. 1 PIN CONFIGURATION TOP VIEW A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS ADVANCED* FEATURES s Access Times of 35ns (SRAM) and 70ns (FLASH) s JEDEC Standard, Hermetic Ceramic Package, 32 pin DIP (Package 300) s 256Kx8 SRAM s 256Kx8 5V FLASH s Memory Map Flash Memory: 0H-3FFFFH SRAM: 40000H-7FFFFH s Low Power CMOS s Commercial, Industrial and Military Temperature Ranges s TTL Compatible Inputs and Outputs s Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation 11 MIXED MODULES 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC WE A17 A14 A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 FLASH MEMORY FEATURES PIN DESCRIPTION A0-18 I/O0-7 CS OE WE VCC VSS Address Inputs Data Input/Output Chip Select Output Enable Write Enable +5.0V Power Ground s 10,000 Erase/Program Cycles s Sector Architecture • 8 equal size sectors of 16KBytes each • Any combination of sectors can be concurrently erased. Also supports full chip erase s Data Retention, 10 Years at 125°C s 5 Volt Programming; 5V ± 10% Supply s Embedded Erase and Program Algorithms s Hardware and Software Write Protection s Page Program Operation and Internal Program Control Time * This data sheet describes a product that may or may not be under development and is subject to change or cancellation without notice. BLOCK DIAGRAM A0-16 I/O 0-7 WE OE 128K x 8 Flash 128K x 8 Flash 128K x 8 SRAM 128K x 8 SRAM A17 A18 CS Decoder January 1996 1 White Microelectronics • Phoenix, AZ • (602) 437-1520 WSF256K8-XCX PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED 11 MIXED MODULES 42.4 (1.670) ± 0.4 (0.016) 15.04 (0.592) ± 0.3 (0.012) 4.34 (0.171) ± 0.79 (0.031) PIN 1 IDENTIFIER 3.2 (0.125) MIN 0.84 (0.033) ± 0.4 (0.014) 2.5 (0.100) TYP 1.27 (0.050) ± 0.1 (0.005) 0.46 (0.018) ± 0.05 (0.002) 0.25 (0.010) ± 0.05 (0.002) 15.25 (0.600) ± 0.25 (0.010) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ORDERING INFORMATION W S F 256K8 - XXX C X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: M = Military Screened I = Industrial C = Commercial -55°C to +125°C -40°C to +85°C 0°C to +70°C PACKAGE TYPE: C = 32 DIP (Package 300) ACCESS TIME (ns) 37 = 35ns SRAM and 70ns FLASH 72 = 70ns SRAM and 120ns FLASH also available ORGANIZATION, 256K x 8 Flash PROM SRAM WHITE MICROELECTRONICS White Microelectronics • Phoenix, AZ • (602) 437-1520 2
WSF256K8-72CI
物料型号: - WSF256K8-XCX

器件简介: - 这是一个256Kx8位的SRAM/FLASH模块,具有高级特性。

引脚分配: - 该模块共有32个引脚,包括地址输入A0-18,数据输入/输出I/O0-7,芯片选择CS,输出使能OE,写使能WE,以及电源VCC和地VSS。

参数特性: - 访问时间:SRAM为35ns,FLASH为70ns。 - 遵循JEDEC标准,采用陶瓷DIP 32引脚封装(Package 300)。 - 内存包括256Kx8的SRAM和256Kx8的5V FLASH。 - 低功耗CMOS技术,支持商业、工业和军事温度范围。 - TTL兼容的输入输出,内置去耦电容和多个地线以降低噪声。

功能详解: - FLASH内存特征包括10000次擦写/编程周期,8个等大小的16KBytes扇区,支持全芯片擦除。 - 数据保持时间为10年,工作温度可达125°C。 - 5V供电,嵌入式擦除和编程算法,硬件和软件写保护,页编程操作和内部程序控制。

应用信息: - 该模块适用于需要高速访问和大容量存储的应用场合,具体应用场景未在文档中详述。

封装信息: - 封装类型为Package 300,32引脚,陶瓷DIP,单腔侧钎焊。
WSF256K8-72CI 价格&库存

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