2MBI400U2B-060

2MBI400U2B-060 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 600V / 400A 2 in one-package 2. Equivalent circuit Equivalent Circuit Schematic Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions Rating 650 ±20 400 800 400 800 1250 +150 -40 to +125 2500 3.5 3.5 Unit V V A Continuous 1ms Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 1 device W °C VAC N·m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N·m(M5), Terminal 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead Conditions VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=400mA VGE=15V, IC=400A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =300V IC=400A VGE=±15V RG= 6.8 Ω VGE=0V IF=400A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 6.2 6.7 – 2.25 – 2.50 – 1.85 – 2.10 – 29 – 0.40 – 0.22 – 0.16 – 0.48 – 0.07 – 2.00 – 2.05 – 1.60 – 1.65 – – – 0.97 Unit Max. 2.0 400 7.7 2.55 – – – – 1.20 0.60 – 1.20 0.45 2.35 – – – 0.35 – mA nA V V Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=400A µs mΩ *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.025 Unit Max. 0.10 0.16 – °C/W °C/W °C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 2MBI400U2B-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1000 1000 VGE=20V15V IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 800 Collector current : Ic [A] VGE=20V15V 12V Collector current : Ic [A] 800 12V 600 10V 600 10V 400 400 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1000 Tj=25°C Tj=125°C Collector - Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10.0 800 Collector current : Ic [A] 8.0 600 6.0 400 4.0 Ic=800A Ic=400A Ic=200A 200 2.0 0 0 1 2 3 4 0.0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) 100.0 Capacitance : Cies, Coes, Cres [ nF ] Cies Collector-Emitter voltage : VCE [ 100V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=300V, Ic=400A, Tj= 25°C 10.0 Cres Coes 1.0 VGE VCE 0 400 800 1200 1600 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 2MBI400U2B-060 IGBT Module Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=6.8Ω, Tj= 25°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=6.8Ω, Tj=125°C 1000 toff 1000 ton toff tr ton 100 tr tf 100 tf 10 0 200 400 600 800 Collector current : Ic [ A ] 10 0 200 400 600 800 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=400A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 40 Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=6.8Ω 30 Eoff(125°C) Eon(125°C) Eoff(25°C) 1000 toff ton 100 tr tf 20 Eon(25°C) 10 Err(125°C) Err(25°C) 0 0 200 400 600 800 10 1.0 10.0 Gate resistance : Rg [ Ω ] 100.0 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=400A, VGE=±15V, Tj= 125°C 60 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 50 40 30 20 10 0 1.0 10.0 Gate resistance : Rg [ Ω ] Err 100.0 1000 Reverse bias safe operating area (max.) +VGE=15V,-VGE = 6.8Ω ,Tj