2N2222A

2N2222A High Speed Switching Transistor Features: • NPN Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching and Linear application DC and VHF Amplifier applications. TO-18 Metal Can Package Dimensions A B C D E F G H J K L Minimum 5.24 4.52 4.31 0.4 — — — 0.91 0.71 12.7 45° Dimensions : Millimetres Maximum 5.84 4.97 5.33 0.53 0.76 1.27 2.97 1.17 1.21 — Pin Configuration: 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 2N2222A High Speed Switching Transistors Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC= 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Rating 40 75 6.0 800 500 2.28 1.2 6.85 -65 to +200 mA mW mW/°C W mW/°C °C V Unit Electrical Characteristics (Ta = 25°C unless otherwise specified) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO ICBO Collector-Cut off Current ICEX Emitter-Cut off Current Base-Cut off Current Collector Emitter Saturation Voltage IEBO IBL *VCE(Sat) Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 60V, IE = 0 Ta = 150°C VCB = 60V, IE = 0 VCE = 60V, VEB = 3V VEB = 3V, IC = 0 VCE = 60V, VEB = 3V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base Emitter Saturation Voltage *VBE(Sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 10 10 10 20 0.3 1.0 0.6-1.2 2.0 V µA nA nA Value Minimum 40 75 6.0 Maximum 10 nA V Unit Page 2 31/05/05 V1.0 2N2222A High Speed Switching Transistors Electrical Characteristics (Ta = 25°C unless otherwise specified) Parameter DC Current Gain Symbol hFE Test Condition IC = 0.1mA, VCE = 10V IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V Ta = 55°C IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 150mA, VCE = 1V IC = 500mA, VCE = 10V Rating >35 >50 >75 >35 100-300 >50 >40 Unit Dynamic Characteristics ALL F = 1kHz Small Signal Current Gain hfe IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V IE = 20mA, VCB = 20V f = 31.8MHz IC = 20mA, VCE = 20V f = 300MHz IC = 100µA, VCE = 10V Rs = 1kohms, f = 1kHz 50 - 300 75 - 375 2.0-8.0 0.25-1.25