6MBI450U-170

6MBI450U-170 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1700V / 450A 6 in one-package Applications · Uninterruptible power supply · Inverter for Motor drive · AC and DC Servo drive amplifier · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions Rating 1700 ±20 600 450 1200 900 450 900 2080 +150 -40 to +125 3400 Unit V V A Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C 1 device Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 between thermistor and others *2 3.5 Screw Torque Mounting *3 4.5 Terminals *4 *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6) W °C VAC N·m Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead R Conditions VGE=0V, VCE=1700V VCE=0V, VGE=±20V VCE=20V, IC=450mA VGE=15V, IC=450A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =900V IC=450A VGE=±15V RG=1.1 Ω VGE=0V IF=450A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 2.50 – 2.85 – 2.05 – 2.40 – 45 – 0.58 – 0.32 – 0.10 – 0.80 – 0.15 – 2.25 – 2.45 – 1.80 – 2.00 – 0.3 – 1.0 – 5000 465 495 3305 3375 Unit Max. 3.0 600 8.5 3.00 – 2.55 – – 1.20 0.60 – 1.50 0.30 3.00 – 2.55 – 0.6 – – 520 3450 mA nA V V Inverter Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Thermistor Reverse recovery time Lead resistance, terminal-chip*5 Resistance IF=450A T=25°C T=100°C T=25/50°C µs mΩ Ω Κ B value B *5:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*6 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.0167 Unit Max. 0.06 0.10 – °C/W °C/W °C/W *6 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 6MBI450U-170 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1200 1200 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 1000 Collector current : Ic [A] VGE=20V 15V Collector current : Ic [A] 1000 VGE=20V 15V 800 12V 600 800 12V 600 400 10V 200 9V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 400 10V 200 9V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1200 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip Collector - Emitter voltage : VCE [ V ] 1000 Collector current : Ic [A] 800 T j=25°C 8 T j=125°C 600 400 6 4 200 2 Ic=900A Ic=450A Ic=225A 5 10 15 20 25 0 0 1 2 3 4 5 0 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25°C 1000.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=900V, Ic=450A, Tj= 25°C Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies VGE 10.0 Cres 1.0 Coes VCE 0 500 1000 1500 2000 2500 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 6MBI450U-170 Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.1Ω, Tj= 25°C 10000 10000 IGBT Module Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.1Ω, Tj=125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 toff ton tr 1000 toff ton tr tf 100 tf 100 10 0 200 400 600 800 Collector current : Ic [ A ] 10 0 200 400 600 800 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=450A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 250 Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.1Ω Eoff(125°C) 200 Eoff(25°C) Switching time : ton, tr, toff, tf [ nsec ] 1000 toff ton tr tf 150 Eon(125°C) Err(125°C) Err(25°C) Eon(25°C) 100 100 50 10 0.1 1.0 Gate resistance : Rg [ Ω ] 10.0 0 0 200 400 600 800 1000 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=450A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) +VGE=15V,-VGE = 1.1Ω ,Tj