Tanceram® chip capaciTors
TANCERAM® chip capacitors can replace tantalum capacitors in many applications and offer several key advantages over traditional tantalums. Because Tanceram® capacitors exhibit extremely low ESR, equivalent circuit performance can often be achieved using considerably lower capacitance values. Low DC leakage reduces current drain, extending the battery life of portable products. Tancerams® high DC breakdown voltage ratings offer improved reliability and eliminate large voltage de-rating common when designing with tantalums.
AdvANtAges
• • • • Low ESR Higher Surge Voltage Reduced CHIP Size Higher Insulation Resistance • • • • Low DC Leakage Non-polarized Devices Improved Reliability Higher Ripple Current
AppliCAtioNs
• Switching Power Supply Smoothing (Input/Output) • DC/DC Converter Smoothing (Input/Output) • Backlighting Inverters • General Digital Circuits
Typical ESR Comparison
10 100%
Typical Breakdown Voltage Comparison
1.0 µF / 16V Tantalum
1.0 µF / 16V Tantalum
% Distribution ESR (Ohms)
1
75%
50%
1.0 µF / 16V TANCERAM
0.1
1.0 µF / 16V TANCERAM
25%
0.01 0.001
0.01
0.1
1
10
100
0%
0
100
200
300
400
500
Frequency (MHz)
DC Breakdown Voltage
How to order tANCerAM® 250
VOLTAGE 500 = 50 V 250 = 25 V 160 = 16 V 100 = 10 V 6R3 = 6.3 V
R18
CASE SIZE See Chart
Y
DIELECTRIC W = X7R X = X5R Y = Y5V
105
CAPACITANCE 1st two digits are significant; third digit denotes number of zeros. 474 = 0.47 µF 105 = 1.00 µF
Z
TOLERANCE Y5V Z = +80% -20% X7R/X5R K = ±10% M = ±20%
V
TERMINATION V = Ni barrier w/ 100% Sn Plating MARKING 4 = Unmarked
4
E
TAPE MODIFIER Code Type Reel E Plastic 7” T Paper 7” Tape specifications conform to EIA RS481
P/N written: 250R18Y105ZV4E
14
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Tanceram® chip capaciTors
CApACitANCe seleCtioN
.047 pF 0.10 µF 0.22 µF 0.33 µF 0.47 µF
CAse size 0402 R07 0603 R14 0805 R15 1206 R18 1210 S41 1812 S43
L W T E/B Inches .040 ±.004 .020 ±.004 .025 Max. .008 ±.004 Inches .063 ±.008 .032 ±.008 .035 Max. .010±.005 Inches .080 ±.010 .050 ±.010 .060 Max. .020±.010 (mm) (1.02 ±.10) (0.51 ±.10) (0.64) (0.20±.10) (mm) (1.60 ±.20) (0.81 ±.20) (0.89) (.25±.13) (mm) (2.03 ±.25) (1.27 ±.25) (1.52) (0.51±.25 )
L W T E/B
L W T E/B
Inches (mm) (3.17 ±.25) L .125 ±.010 (1.57 ±.25) W .062 ±.010 .070 Max. (1.78) T E/B .020 +.015-0.10 (0.51+.38-.25) Inches (mm) (3.18 ±.25) L .125 ±.010 (2.41 ±.25) W .095 ±.010 .110 Max. (2.8) T E/B .020 +.015-0.10 (0.51+.38-.25) Inches .175 ±.010 .125 ±.010 .110 Max. .035±.020 .140 Max. (mm) (4.45 ±.25) (3.17 ±.25) (2.8) (0.89±.51) (3.55)
L W T E/B *T
50 V 25 V 16 V 10 V 6.3 V 50 V 25 V 16 V 10 V 6.3 V 50 V 25 V 16 V 10 V 6.3 V 50 V 25 V 16 V 10 V 6.3 V 50 V 25 V 16 V 10 V 6.3 V 50 V 25 V 16 V 10 V 6.3 V
DIELECTRIC
X7R
X5R Y5V
W
L
T
E/B
eleCtriCAl CHArACteristiCs
X7R
Temperature Coefficient: Dissipation Factor: Insulation Resistance (Min. @ 25°C, WVDC) Dielectric Strength: Test Conditions: Other: ±15% (-55 to +125°C) For ≥ 50 VDC: 5% max. For ≤ 25 VDC: 10% max.
X5R
±15% (-55 to +85°C) For ≥ 50 VDC: 5% max. For ≤ 25 VDC: 10% max. 500 ΩF or 10 GΩ, whichever is less 2.5 X WVDC, 25°C, 50mA max. Capacitance values ≤ 22 µF: 1.0kHz±50Hz @ 1.0±0.2 Vrms Capacitance values > 22 µF: 120Hz±10Hz @ 0.5V±0.1 Vrms See page 20 for additional dielectric specifications.
Y5V
+22%, -82% (-30 to +85°C) For ≥ 10 VDC: 16% max. For 6.3 VDC: 20% max.
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100 µF
1.0 µF
2.2 µF
3.3 µF
4.7 µF
10 µ F
22 µ F
47 µ F
*
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