7MBR50SC060
PIM/Built-in converter with thyristor and brake (S series) 600V / 50A / PIM
Features
· Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit
IGBT Modules
Applications
· Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RRM IO IFSM I2t Tj Tstg Viso Continuous 1ms 1 device Condition Rating 600 ±20 50 100 50 200 600 ±20 30 60 120 600 800 800 50 563 125 800 50 525 1378 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A °C V A A A 2s °C °C V V N·m
Brake
Inverter
Continuous 1ms 1 device
Thyristor
50Hz/60Hz sine wave Tj=125°C, 10ms half sine wave
Converter
50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave
Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
AC : 1 minute
*1 Recommendable value : 1.3 to 1.7 N·m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base.
IGBT Module
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
Inverter
7MBR50SC060
Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT V GT V TM V FM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=50mA VGE=15V, Ic=50A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =300V IC=50A VGE=±15V RG=51Ω IF=50A chip terminal IF=50A VCES=600V, VGE=0V VCE=0V, VGE=±20V IC=30A, VGE=15V chip terminal V CC =300V IC=30A VGE=±15V RG=82Ω V R=600V V DM=800V V RM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=50A chip terminal IF=50A chip terminal V R=800V T=25°C T=100°C T=25/50°C Characteristics Typ. Max. 150 200 5.5 7.8 8.5 1.8 1.95 2.4 5000 0.45 0.25 0.40 0.05 1.75 1.9 1.2 0.6 1.0 0.35 2.6 300 150 200 2.4 1.2 0.6 1.0 0.35 150 1.0 1.0 100 2.5 1.3 Unit µA nA V V pF µs
Min.
Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage
V ns µA nA V µs
Brake
Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage
1.8 1.95 0.45 0.25 0.40 0.05
Thyristor
Converter
1.1 1.2 1.1 1.2 5000 495 3375
µA mA mA mA V V V
Thermistor
Reverse current Resistance B value
1.5 150 520 3450
µA Ω K
465 3305
Thermal resistance Characteristics
Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 0.63 1.33 1.04 1.00 0.90 0.05 Unit
Thermal resistance ( 1 device )
Rth(j-c)
°C/W
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
IGBT Module
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C(typ.)
7MBR50SC060
120
120
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C(typ.)
VGE= 20V 15V 100
12V 100
VGE= 20V
15V
12V
Collector current : Ic [ A ]
80
Collector current : Ic [ A ]
80
60
60
40
40 10V
20
10V
20
0 0 1 2 3 4 5
0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
120 10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C(typ.)
Tj= 25°C 100
Tj= 125°C
80
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
60
4
40
Ic=100A 2 Ic= 50A Ic= 25A
20
0 0 1 2 3 4
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
20000
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C
500
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25°C
25
10000
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
400
20
Cies
300
15
1000
200
10
Coes Cres
100
5
100 0 5 10 15 20 25 30 35
0 0 50 100 150 200 250
0 300
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
IGBT Module
7MBR50SC060
1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=51Ω, Tj= 25°C
1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg= 51Ω, Tj= 125°C
toff toff
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
ton tr
ton tr
100
100
tf
tf
10 0 20 40 60 80
10 0 20 40 60 80
Collector current : Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=50A, VGE=±15V, Tj= 25°C
5000 5
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=51Ω
ton
Switching time : ton, tr, toff, tf [ nsec ]
1000
toff tr
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
4
Eon(125°C) Eoff(125°C)
Eon(25°C) 3
Eoff(25°C) 2
100
tf
1
Err(125°C)
Err(25°C) 10 10 50 100 500 0 0 20 40 60 80 100
Gate resistance : Rg [ Ω ]
Collector current : Ic [ A ]
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=50A, VGE=±15V, Tj= 125°C
10 600
[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=51Ω, Tj