7MBR75UB120

7MBR75UB120 IGBT MODULE (U series) 1200V / 75A / PIM IGBT Modules Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current ICP -IC -IC pulse PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) PC V RRM V RRM IO IFSM I2t Tj Tstg Viso 1ms Symbol VCES VGES IC Continuous Tc=25°C Tc=80°C Tc=25°C Tc=80°C Condition Rating 1200 ±20 75 50 150 100 75 150 275 1200 ±20 35 25 70 50 160 1200 1600 75 520 1352 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A Inverter Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1ms 1 device Continuous 1ms 1 device Tc=25°C Tc=80°C Tc=25°C Tc=80°C W V V A 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute W V V A A A 2s °C °C V V N·m *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Converter IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM V FM IRRM R B Symbol Condition VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=75mA Tj=25°C VGE=15V Tj=125°C Ic=75A Tj=25°C Tj=125°C VGE=0V, VCE=10V, f=1MHz V CC=600V IC=75A VGE=±15V RG= 22 Ω VGE= 0 V IF=75A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Min. 4.5 465 3305 7MBR75UB120 Characteristics Typ. Max. 1.0 200 6.5 8.5 2.35 2.80 2.75 2.00 2.45 2.40 6 0.53 1.20 0.43 0.60 0.03 0.37 1.00 0.07 0.30 2.15 2.50 2.35 1.80 2.15 2.00 0.35 1.0 200 2.30 2.75 2.65 1.95 2.40 2.30 0.53 1.20 0.43 0.60 0.37 1.00 0.07 0.30 1.0 1.40 1.75 1.30 1.0 5000 495 520 3375 3450 Characteristics Typ. Max. 0.05 0.45 0.73 0.76 0.50 Unit mA nA V V Inverter Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake IF=75A VCE=1200V, VGE=0V VCE=0V, VGE=±20V Tj=25°C IC=35A Tj=125°C VGE=15V Tj=25°C Tj=125°C V CC=600V IC=35A VGE=±15V RG= 43 Ω V R=1200V IF=75A VGE=0V V R=1600V T=25°C T=100°C T=25/50°C Condition µs mA nA V Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value µs Converter terminal chip mA V mA Ω K Unit Item Thermistor Thermal resistance Characteristics Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound - Thermal resistance ( 1 device ) Rth(j-c) °C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] 22(P1) [Inverter] [Thermistor] 8 9 20(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 7(B) 19(Eu) 4(U) 17(Ev) 5(V) 15(Ew) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 10(En) 23(N) 24(N1) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 120 VGE=20V 15V 100 Collector current : Ic [A] Collector current : Ic [A] 12V 100 120 7MBR75UB120 [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip VGE=20V 15V 12V 80 80 60 10V 60 10V 40 40 20 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 20 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 120 Collector - Emitter voltage : VCE [ V ] Tj=25°C 100 Collector current : Ic [A] 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 8 80 Tj=125°C 60 6 4 Ic=100A Ic=50A Ic= 25A 40 20 2 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 10.0 Cies Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=75A, Tj= 25°C VGE Coes 1.0 Cres VCE 0.1 0 10 20 30 0 0 50 100 150 200 250 300 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] IGBT Module 7MBR75UB120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=22Ω , Tj= 25°C 10000 10000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=22Ω , Tj=125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 ton tr toff 100 tf 1000 toff ton tr 100 tf 10 0 25 50 75 100 10 0 25 50 75 100 [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] tr ton toff 1000 30 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=22Ω Switching time : ton, tr, toff, tf [ nsec ] 25 Eon(125°C Eon(25°C) 20 15 100 tf 10 Eoff(125°C Eoff(25°C) 5 Err(125°C) Err(25°C) 10 10.0 0 100.0 1000.0 0 25 50 75 100 125 [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V, Tj= 125°C 40 Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 150 Collector current : Ic [ A ] 30 180 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE = 22Ω ,Tj