CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.1 Ampere
APPLICATION
* Low power rectification
C H501H-40PT
FEATURE
* Small surface mounting type. (SC-76/SOD-323) * Low VF. (VF=0.43V Typ. at 100mA) * High reliability * Lead free devices
0.3± 0.10 0.05
(1)
SC-76/SOD-323
Cathode Band
(2)
1.25±0.1
CONSTRUCTION
* Silicon epitaxial planar
1.7±0.1
MARKING
* JS
0.70±0.2 0.1 0.1Max.
(2)
0.1± 0.05 0.02 0.35±0.1 2.5±0.2
CIRCUIT
(1)
Dimensions in millimeters
SC-76/SOD-323
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range
o
SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG
CH501H-40PT 45 32 40 0.1 1.0 6.0 +125 -40 to +125
UNITS Volts Volts Volts Amps Amps pF
o
C C
o
ELECTRICAL CHARACTERISTICS ( At TA = 25 C unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF(1)= 100mA Maximum Instantaneous Forward Voltage at IF(2)= 10mA Maximum Average Reverse Current at VR= 10V SYMBOL VF(1) VF(2) IR CH501H-40PT 0.55 0.34 30 UNITS Volts Volts uAmps 2002-5
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required.
RATING CHARACTERISTIC CURVES ( CH501H-40PT)
FIG. 1 - FORWARD CHARACTERISTICS 1000 FORWARD CURRENT, (mA) REVERSE CURRENT, (A) 10m
o Ta=125 C
FIG. 2 - REVERSE CHARACTERISTICS
1m 100u 10u 1u 0.1u
o 75 C
100
Ta =1 2
75 o C
10
o 25 C
5
C
o
25 o C
1 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE, (V)
-25 o C
0
10
20
30
40
REVERSE VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE AVERAGE FORWARD CURRENT, (%) 100 JUNCTION CAPACITANCE , (pF) 120 100 80 60 40 20 0 0
FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE
10
10
5
10
15
20
25
30
35
25
50
75
100
125
150
REVERSE VOLTAGE, (V)
AMBIENT TEMPERATURE, (oC)
