FS01...A/B
SENSITIVE GATE SCR
TO92 (Plastic) RD26 (Plastic)
On-State Current 0.8 Amp Off-State Voltage 200 V ÷ 600 V
K G A A G K
Gate Trigger Current < 200 µA
FS01...A
FS01...B
This series of Silicon Controlled R ectifiers uses a high performance PNPN technology. This part is intended for general purpose applications where high gate sensitivity is required.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS All Conduction Angle, TL = 60 ºC Half Cycle, Θ = 180 º, TL = 60 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25º C t = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. Min. 0.8 0.5 8 7 0.24 8 1 2 0.1 +125 +150 260 Max. Unit A A A A A2s V A W W ºC ºC ºC
IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld
SYMBOL
-40 -40 1.6 mm from case, 10s max.
PARAMETER Repetitive Peak Off State Voltage
CONDITIONS Tj = -40 to +125 ºC, RGK = 1 KΩ B 200
VOLTAGE D 400 M 600
Unit V
VDRM VRRM
Feb - 01
FS01...A/B
SENSITIVE GATE SCR
Electrical Characteristics
SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage On-state Threshold Voltage On-state slope Resistance Gate Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN MAX VD = VDRM , RGK = 1KΩ, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX Tj = 125 ºC MAX Tj = 125 ºC MAX VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX MAX IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC MAX MIN VD = 0.67 x VDRM , RGK = 1KΩ, Tj = 125 ºC MIN TYP MAX VD = 12 VDC , RL = 140Ω, Tj = 25 ºC SENSITIVITY 01 1 20 100 1 1.93 0.95 600 0.8 5 6 75 30 500 200 02 µA 200 µA V V mΩ V mA mA V/µs A/µs ns µs Unit
IGT IDRM / IRRM VTM VT(TO) rT VGT IH IL dv / dt di / dt tgd tq
Critical Rate of Current Rise IG = 10 mA, diG/dt = 0.1 A/µs, Tj = 125 ºC Gate Controlled Delay Time IG = 10 mA, diG/dt = 0.1 A/µs, Tj = 25 ºC ITM = 3x IT(AV) VD = VDRM Commutated Turn-Off Time ITM = 3x IT(AV) VR = 35 V di/dt = 10 A/µs tp = 100 µs dv/dt = 10 V/µs Tj = 125 ºC VD = 67% VDRM RGK = 1KΩ
Rth(j-l) Rth(j-a)
Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient
80 150
ºC/W ºC/W
PART NUMBER INFORMATION F
FAGOR SCR CURRENT SENSITIVITY
S
01
02
B
A
PACKAGE: A: TO92 B: RD26 VOLTAGE
Feb - 01
FS01...A/B
SENSITIVE GATE SCR
Fig. 1: Maximum average power dissipation versus average on-state current P (W) 1
360 º Rth (j-l)
Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T lead). P (W) 1 T lead (ºC) -45
0.8
α DC
0.8
Rth (j-a)
-65
0.6
α = 180 º α = 120 º
0.6 -85 0.4
0.4
α = 90 º
0.2
α = 60 º α = 30 º IT(AV)(A)
0.2
Tamb (ºC)
-105
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0 0 20 40 60 80
-125 100 120 140
Fig. 3: Average on-state current versus lead temperature I T(AV) (A) 1
DC
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00
0.8
0.6
α = 180 º
0.10
0.4
0.2
T lead (ºC) tp (s)
0 0 20 40 60 80 100 120 140
0.01 1E-3
1E-2
1E-1
1E+0
1E+1 1E+2 5E+2
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) 10.0 9.0 8.0 7.0 6.0
Igt
Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 8
Tj initial = 25 ºC
Ih (Tj) Ih (Tj = 25 ºC)
7 6 5 4 3 2
Ih
5.0 4.0 3.0 2.0 1.0
Tj (ºC)
1
Number of cycles
0.0 -40 -20 0 20 40 60 80 100 120 140
0 1 10 100 1,000
Feb - 01
FS01...A/B
SENSITIVE GATE SCR
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 100
Tj initial = 25 ºC
Fig. 8: On-state characteristics (maximum values).
Fig. 9: Relative variation of holding current versus gate-cathode resistance (typical values). Ih(Rgk) Ih(Rgk = 1kΩ) 5.0
Tj = 25 ºC
ITM(A) 10
Tj initial 25 ºC Tj max
ITSM
10 1.0 1 1
I2 t Tj max Vto = 0.95 V Rt = 0.600Ω
tp(ms)
VTM(V)
Rgk (Ω)
0.1 1 10
0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0.1 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
PACKAGE MECHANICAL DATA
TO92 (Plastic) DIMENSIONS Milimeters Typ. 1.5 4.6 2.54 1.27 4.6 14.1 3.6 1.5 0.43 0.38
REF.
A H
C
D b G
a B E F
A B C D E F G H a b
Min. 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33
Max. 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43
Marking: type number Weight: 0.2 g
PACKAGE MECHANICAL DATA
C D
RD26 (Plastic) DIMENSIONS Millimeters Typ. 1.5 4.6 2.54 1.27 4.6 14.1 3.6 0.43 0.38
REF. A B C D E F G a b Min. 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33
G a B
A 45º E F
b
Max. 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43
Marking: type number Weight: 0.2 g
Feb - 01
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